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公开(公告)号：US20190285802A1
公开(公告)日：2019-09-19
申请号：US16295553
申请日：2019-03-07
Applicant: STMicroelectronics (Crolles 2) SAS
Inventor： Sylvain GUERBER , Charles BAUDOT
Abstract: An optical waveguide termination device includes a waveguide and metal vias surrounding an end portion of the waveguide. The end portion of the waveguide has a transverse cross-sectional area that decreases towards its distal end. The metal vias are orthogonal to a same plane, with the same plane being orthogonal to the transverse cross-section. The metal vias absorb light originating from the end portion when a light signal propagates through the waveguide, and the metal vias and the end portion provide that an effective index of an optical mode to be propagated through the waveguide progressively varies in the end portion. Additional metal vias may be present along the waveguide upstream of the end portion, with the additional metal vias bordering the waveguide upstream of the end portion providing that the effective index of an optical mode to be propagated through the waveguide varies progressively toward the end portion.
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公开(公告)号：US20190280146A1
公开(公告)日：2019-09-12
申请号：US16294645
申请日：2019-03-06
Applicant: STMicroelectronics (Crolles 2) SAS
Inventor： Charles BAUDOT , Sebastien CREMER , Nathalie VULLIET , Denis PELLISSIER-TANON
IPC: H01L31/109 , H01L31/028 , H01L31/0232 , H01L31/18
Abstract: A photodiode includes an active area formed by intrinsic germanium. The active area is located within a cavity formed in a silicon layer. The cavity is defined by opposed side walls which are angled relative to a direction perpendicular to a bottom surface of the silicon layer. The angled side walls support epitaxial growth of the intrinsic germanium with minimal lattice defects.
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公开(公告)号：US20190280144A1
公开(公告)日：2019-09-12
申请号：US16292525
申请日：2019-03-05
Applicant: STMicroelectronics (Crolles 2) SAS
Inventor： Charles BAUDOT , Sebastien CREMER , Nathalie VULLIET , Denis PELLISSIER-TANON
IPC: H01L31/105 , G02B6/12 , H01L31/0232
Abstract: A vertical photodiode includes an active area. The contacting pads for the diode terminals are laterally shifted away from the active area so as to not be located above or below the active area. The active area is formed in a layer of semiconductor material by a lower portion of a germanium area that is intrinsic and an upper portion of the germanium area that is doped with a first conductivity type. The vertical photodiode is optically coupled to a waveguide formed in the layer of semiconductor material.
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公开(公告)号：US20170299809A1
公开(公告)日：2017-10-19
申请号：US15132408
申请日：2016-04-19
Applicant: STMICROELECTRONICS (CROLLES 2) SAS
Inventor： Frédéric BOEUF , Charles BAUDOT
IPC: G02B6/12 , H01L21/768 , H01L23/00 , H01L23/48
CPC classification number: G02B6/12004 , H01L21/76877 , H01L21/76898 , H01L23/481 , H01L24/13 , H01L24/14 , H01L2924/00014 , H01L2924/10252 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2224/13099
Abstract: An electro-optic device may include a substrate layer, and a first photonic layer over the substrate layer and having a first photonic device. The electro-optic device may include a second photonic layer over the first photonic layer and having a second photonic device. The electro-optic device may include a dielectric layer over the second photonic layer, and a first electrically conductive via extending through the dielectric layer and the second photonic layer to couple to the first photonic device, and a second electrically conductive via extending through the dielectric layer and coupling to the second photonic device. The electro-optic device may include a third electrically conductive via extending through the substrate layer, the second photonic layer, and the first photonic layer to couple to the substrate layer.
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Patent Agency Ranking
公开(公告)号：US20150260918A1
公开(公告)日：2015-09-17
申请号：US14643662
申请日：2015-03-10
Applicant: STMICROELECTRONICS (CROLLES 2) SAS
Inventor： Charles BAUDOT
CPC classification number: G02B6/2813 , G02B6/12007 , G02B6/122 , G02B6/1228 , G02B6/125 , G02B6/2835 , G02B6/34 , G02B6/43 , G02B2006/12097 , G02B2006/12154 , G02B2006/12159 , Y10T29/49826
Abstract: A multi-mode interference device may include a body having an optical axis and configured to generate a stationary optical interference pattern from an incoming optical wave. The body may include ribs being parallel to the optical axis and being spaced apart to define a pitch and cause an optical coupling between the ribs.
Abstract translation: 多模干涉装置可以包括具有光轴并被配置为从入射光波产生固定光学干涉图案的主体。 主体可以包括平行于光轴并且间隔开以限定间距并且引起肋之间的光学联接的肋。
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公开(公告)号：US20230015854A1
公开(公告)日：2023-01-19
申请号：US17932623
申请日：2022-09-15
Applicant: STMicroelectronics (Crolles 2) SAS
Inventor： Jean-Francois CARPENTIER , Charles BAUDOT
Abstract: A photonic system includes a first photonic circuit having a first face and a second photonic circuit having a second face. The first photonic circuit comprises first wave guides, and, for each first wave guide, a second wave guide covering the first wave guide, the second wave guides being in contact with the first face and placed between the first face and the second face, the first wave guides being located on the side of the first face opposite the second wave guides. The second photonic circuit comprises, for each second wave guide, a third wave guide covering the second wave guide. The first photonic circuit comprises first positioning devices projecting from the first face and the second photonic circuit comprises second positioning devices projecting from the second face, at least one of the first positioning devices abutting one of the second positioning devices in a first direction.
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公开(公告)号：US20190285799A1
公开(公告)日：2019-09-19
申请号：US16295929
申请日：2019-03-07
Applicant: STMicroelectronics (Crolles 2) SAS
Inventor： Sylvain GUERBER , Charles BAUDOT
IPC: G02B6/122
Abstract: An optical waveguide is configured to propagate a light signal. Metal vias are arranged along and on either side of a portion of the optical waveguide. Additional metal vias are further arranged along and on either side of the optical waveguide both upstream and downstream of the portion of the optical waveguide. The metal vias and additional metal vias are oriented orthogonal to a same plane, the same plane being orthogonal to a transverse cross-section of the portion of the optical waveguide.
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公开(公告)号：US20190235166A1
公开(公告)日：2019-08-01
申请号：US16374214
申请日：2019-04-03
Applicant: STMicroelectronics (Crolles 2) SAS
Inventor： Charles BAUDOT
CPC classification number: G02B6/125 , G02B6/1228 , G02B6/136 , G02B2006/12061 , G02B2006/12097 , G02B2006/121 , G02B2006/12173 , G02B2006/12176
Abstract: A photonic integrated device includes a first waveguide and a second waveguide. The first and second waveguides are mutually coupled at a junction region which includes a bulge region. The bulge region is defined two successive etching operations using two distinct etch masks, where the first etching operation is a partial etch and the second etching operation is a complete etch.
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公开(公告)号：US20170075148A1
公开(公告)日：2017-03-16
申请号：US15084645
申请日：2016-03-30
Applicant: STMICROELECTRONICS (CROLLES 2) SAS
Inventor： Charles BAUDOT , Maurin DOUIX , Frédéric BOEUF , Sébastien CREMER
IPC: G02F1/025
CPC classification number: G02F1/025 , G02F2001/0151
Abstract: An E/O phase modulator may include a waveguide having an insulating substrate, a single-crystal silicon strip and a polysilicon strip of a same thickness and doped with opposite conductivity types above the insulating substrate, and an insulating interface layer between the single-crystal silicon strip and polysilicon strip. Each of the single-crystal silicon strip and polysilicon strip may be laterally continued by a respective extension, and a respective electrical contact coupled to each extension.
Abstract translation: E / O相位调制器可以包括具有绝缘衬底，单晶硅条和相同厚度的多晶硅条的波导，并且在绝缘衬底之上掺杂相反导电类型，并且在单晶之间的绝缘界面层 硅带和多晶硅条。 单晶硅带和多晶硅条中的每一个可以通过相应的延伸部横向连续，并且相应的电触点耦合到每个延伸部。
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