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    WLCSP WITH TRANSPARENT SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
    11.
    发明申请
    WLCSP WITH TRANSPARENT SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 有权

    公开(公告)号：US20210305438A1

    公开(公告)日：2021-09-30

    申请号：US17187510

    申请日：2021-02-26

    Applicant: STMICROELECTRONICS LTD ,  STMICROELECTRONICS PTE LTD

    Inventor： David GANI ,  Yiying KUO

    IPC: H01L31/0203 ,  H01L31/02 ,  H01L31/18 ,  H01L31/0392

    Abstract: The present disclosure is directed to a package, such as a wafer level chip scale package (WLCSP), with a die coupled to a central portion of a transparent substrate. The transparent substrate includes a central portion having and a peripheral portion surrounding the central portion. The package includes a conductive layer coupled to a contact of the die within the package that extends from the transparent substrate to an active surface of the package. The active surface is utilized to mount the package within an electronic device or to a printed circuit board (PCB) accordingly. The package includes a first insulating layer separating the die from the conductive layer, and a second insulating layer on the conductive layer.

    PROXIMITY SENSOR WITH INTEGRATED ALS
    12.
    发明申请
    PROXIMITY SENSOR WITH INTEGRATED ALS 审中-公开

    公开(公告)号：US20190154801A1

    公开(公告)日：2019-05-23

    申请号：US15818465

    申请日：2017-11-20

    Applicant: STMICROELECTRONICS PTE LTD

    Inventor： David GANI

    IPC: G01S7/48 ,  G01S17/08 ,  G01S7/481 ,  G01J1/42

    CPC classification number: G01S7/4808 ,  G01J1/4204 ,  G01S7/4813 ,  G01S7/4814 ,  G01S7/4816 ,  G01S7/4876 ,  G01S7/493 ,  G01S7/497 ,  G01S17/026 ,  G01S17/08

    Abstract: A semiconductor package that is a proximity sensor includes a light transmitting die, a light receiving die, an ambient light sensor, a cap, and a substrate. The light receiving die and the light transmitting die are coupled to the substrate. The cap is coupled to the substrate forming a first chamber around the light transmitting die and a second chamber around the light receiving die. The cap further includes a recess with contact pads. The ambient light sensor is mounted within the recess of the cap and coupled to the contact pads. The cap includes electrical traces that are coupled to the contact pads within the recess coupling the ambient light sensor to the substrate. By utilizing a cap with a recess containing contact pads, a proximity sensor can be formed in a single semiconductor package all while maintaining a compact size and reducing the manufacturing costs of proximity sensors.

    PROXIMITY AND RANGING SENSOR
    13.
    发明申请
    PROXIMITY AND RANGING SENSOR 有权
    临近和范围传感器

    公开(公告)号：US20160284920A1

    公开(公告)日：2016-09-29

    申请号：US14671707

    申请日：2015-03-27

    Applicant: STMICROELECTRONICS PTE LTD ,  STMICROELECTRONICS (GRENOBLE 2) SAS

    Inventor： Eric SAUGIER ,  Wing Shenq WONG ,  David GANI

    IPC: H01L31/167 ,  H01L31/18 ,  H01S5/022 ,  H01S5/183 ,  H01L31/02 ,  H01L25/16

    CPC classification number: H01L31/167 ,  H01L25/167 ,  H01L31/02005 ,  H01L31/18 ,  H01L2224/18 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01S5/02248 ,  H01S5/0226 ,  H01S5/02276 ,  H01S5/183 ,  H01L2924/00014 ,  H01L2924/00

    Abstract: A proximity sensor having a relatively small footprint includes a substrate, a semiconductor die, a light emitting device, and a cap. The light emitting device overlies the semiconductor die. The semiconductor die is secured to the substrate and includes a sensor area capable of detecting light from by the light emitting device. The cap also is secured to the substrate and includes a light barrier that prevents some of the light emitted by the light emitting device from reaching the sensor area. In one embodiment, the light emitting device and the semiconductor die are positioned on the same side of the substrate, wherein the light emitting device is positioned on the semiconductor die. In another embodiment, the light emitting device is positioned on one side of the substrate and the semiconductor die is positioned on an opposing side of the substrate.

    Abstract translation: 具有相对较小占地面积的接近传感器包括衬底，半导体管芯，发光器件和帽。 发光器件覆盖半导体管芯。 半导体管芯被固定到基板上并且包括能够检测来自发光器件的光的传感器区域。 盖子也被固定到基板上并且包括防止由发光装置发射的一些光到达传感器区域的光栅。 在一个实施例中，发光器件和半导体管芯位于衬底的相同侧上，其中发光器件位于半导体管芯上。 在另一个实施例中，发光器件位于衬底的一侧，并且半导体管芯位于衬底的相对侧上。

    IMAGE SENSOR DEVICE WITH DIFFERENT WIDTH CELL LAYERS AND RELATED METHODS
    14.
    发明申请
    IMAGE SENSOR DEVICE WITH DIFFERENT WIDTH CELL LAYERS AND RELATED METHODS 有权
    具有不同宽度细胞层的图像传感器器件及相关方法

    公开(公告)号：US20160133662A1

    公开(公告)日：2016-05-12

    申请号：US14535423

    申请日：2014-11-07

    Applicant: STMICROELECTRONICS PTE LTD

    Inventor： Dave Alexis DELACRUZ ,  David GANI

    IPC: H01L27/146

    CPC classification number: H01L27/14625 ,  G03B3/10 ,  G03B17/02 ,  G03B29/00 ,  H01L27/14618 ,  H01L27/14685

    Abstract: An image sensor device may include an interconnect layer, an image sensor IC on the interconnect layer, and a barrel adjacent the interconnect layer and having first electrically conductive traces. The image sensor device may include a liquid crystal focus cell carried by the barrel and having cell layers, and second electrically conductive contacts. A pair of adjacent cell layers may have different widths. The image sensor device may include an electrically conductive adhesive body coupling at least one of the second electrically conductive contacts to a corresponding one of the first electrically conductive traces.

    Abstract translation: 图像传感器装置可以包括互连层，互连层上的图像传感器IC，以及与互连层相邻并且具有第一导电迹线的镜筒。 图像传感器装置可以包括由筒体承载并具有单元层的液晶聚焦单元和第二导电触点。 一对相邻的单元层可以具有不同的宽度。 图像传感器装置可以包括将至少一个第二导电触点耦合到第一导电迹线中的对应的一个的导电粘合体。

    PROXIMITY SENSOR WITH INTEGRATED ALS
    16.
    发明申请
    PROXIMITY SENSOR WITH INTEGRATED ALS 有权

    公开(公告)号：US20220107392A1

    公开(公告)日：2022-04-07

    申请号：US17551001

    申请日：2021-12-14

    Applicant: STMICROELECTRONICS PTE LTD

    Inventor： David GANI

    IPC: G01S7/48 ,  G01J1/42 ,  G01S7/481 ,  G01S17/08 ,  G01S7/493 ,  G01S7/497 ,  G01S7/487 ,  G01S17/04

    Abstract: A semiconductor package that is a proximity sensor includes a light transmitting die, a light receiving die, an ambient light sensor, a cap, and a substrate. The light receiving die and the light transmitting die are coupled to the substrate. The cap is coupled to the substrate forming a first chamber around the light transmitting die and a second chamber around the light receiving die. The cap further includes a recess with contact pads. The ambient light sensor is mounted within the recess of the cap and coupled to the contact pads. The cap includes electrical traces that are coupled to the contact pads within the recess coupling the ambient light sensor to the substrate. By utilizing a cap with a recess containing contact pads, a proximity sensor can be formed in a single semiconductor package all while maintaining a compact size and reducing the manufacturing costs of proximity sensors.

    METHOD OF MANUFACTURING A THIN SEMICONDUCTOR CHIP USING A DUMMY SIDEWALL LAYER AND A DEVICE THEREOF
    17.
    发明申请
    METHOD OF MANUFACTURING A THIN SEMICONDUCTOR CHIP USING A DUMMY SIDEWALL LAYER AND A DEVICE THEREOF 有权

    公开(公告)号：US20210020555A1

    公开(公告)日：2021-01-21

    申请号：US16927776

    申请日：2020-07-13

    Applicant: STMICROELECTRONICS PTE LTD ,  STMICROELECTRONICS (ROUSSET) SAS

    Inventor： Laurent HERARD ,  David PARKER ,  David GANI

    IPC: H01L23/498 ,  H01L21/48

    Abstract: The present disclosure provides devices and methods in which a semiconductor chip has a reduced size and thickness. The device is manufactured by utilizing a sacrificial or dummy silicon wafer. A recess is formed in the dummy silicon wafer where the semiconductor chip is mounted in the recess. The space between the dummy silicon wafer and the chip is filled with underfill material. The dummy silicon wafer and the backside of the chip are etched using any suitable etching process until the dummy silicon wafer is removed, and the thickness of the chip is reduced. With this process, the overall thickness of the semiconductor chip can be thinned down to less than 50 μm in some embodiments. The ultra-thin semiconductor chip can be incorporated in manufacturing flexible/rollable display panels, foldable mobile devices, wearable displays, or any other electrical or electronic devices.

    SEMICONDUCTOR PACKAGE WITH PROTECTED SIDEWALL AND METHOD OF FORMING THE SAME
    19.
    发明申请
    SEMICONDUCTOR PACKAGE WITH PROTECTED SIDEWALL AND METHOD OF FORMING THE SAME 审中-公开

    公开(公告)号：US20190267302A1

    公开(公告)日：2019-08-29

    申请号：US16270927

    申请日：2019-02-08

    Applicant: STMICROELECTRONICS PTE LTD

    Inventor： Yun LIU ,  David GANI

    IPC: H01L23/31 ,  H01L23/00 ,  H01L21/56 ,  H01L21/78

    Abstract: A semiconductor package having a die with a sidewall protected by molding compound, and methods of forming the same are disclosed. The package includes a die with a first surface opposite a second surface and sidewalls extending between the first and second surfaces. A redistribution layer is formed on the first surface of each die. An area of the first surface of the die is greater than an area of the redistribution layer, such that a portion of the first surface of the die is exposed. When molding compound is formed over the die and the redistribution layer to form a semiconductor package, the molding compound is on the first surface of the die between an outer edge of the redistribution layer and an outer edge of the first surface. The molding compound is also on the sidewalls of the die, which provides protection against chipping or cracking during transport.

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