公开(公告)号：US11430847B2

公开(公告)日：2022-08-30

申请号：US16820102

申请日：2020-03-16

Applicant: SAMSUNG DISPLAY CO., LTD

Inventor： Kyoungseok Son ,  Jaybum Kim ,  Eoksu Kim ,  Junhyung Lim ,  Jihun Lim

IPC: H01L27/32 ,  H01L21/02 ,  H01L21/4757 ,  H01L29/66 ,  H01L29/786 ,  H01L27/12 ,  H01L49/02 ,  H01L29/24

Abstract: A method of manufacturing a semiconductor device. A pre first semiconductor pattern having a crystalline semiconductor material is formed on a base substrate. A pre first insulation layer is formed on the pre first semiconductor pattern. A first semiconductor pattern is formed by defining a channel region in the pre first semiconductor pattern. A pre protection layer is formed on the pre first insulation layer. A pre second semiconductor pattern including an oxide semiconductor material is formed on the pre protection layer. A pre second insulation layer is formed on the pre second semiconductor pattern. The pre second insulation layer is patterned using an etching gas such that at least a portion of the pre second semiconductor pattern is exposed. A second semiconductor pattern is formed by defining a channel region in the pre second semiconductor pattern. The pre protection layer has a material with a first etch selectivity that is different from a second etch selectivity of the second insulation layer with respect to the etching gas.

公开(公告)号：US20210336061A1

公开(公告)日：2021-10-28

申请号：US17370590

申请日：2021-07-08

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kyoungseok Son ,  Eoksu Kim ,  Jaybum Kim ,  Junhyung Lim ,  Jihun Lim

IPC: H01L29/786 ,  H01L27/12 ,  H01L27/32 ,  H01L23/485 ,  H01L51/00

Abstract: A display apparatus includes: a substrate on which a first area, a second area spaced apart from the first area, and a bending area between a first area and a second area and bent along a bending axis are defined; a first thin-film transistor (“TFT”) and a second TFT; and a first conductive layer and a second conductive layer. The first TFT includes: a first active layer including polycrystalline silicon; a first gate electrode; and a first electrode disposed at a level which is the same as a level of the first conductive layer, and the second TFT includes: a second active layer including an oxide semiconductor; a second gate electrode; and a second electrode disposed at a level which is the same as a level of the second conductive layer.

公开(公告)号：US11088284B2

公开(公告)日：2021-08-10

申请号：US15871468

申请日：2018-01-15

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kyoungseok Son ,  Eoksu Kim ,  Jaybum Kim ,  Junhyung Lim ,  Jihun Lim

IPC: H01L29/786 ,  H01L27/12 ,  H01L27/32 ,  H01L23/485 ,  H01L51/00 ,  H01L27/06

Abstract: A display apparatus includes: a substrate on which a first area, a second area spaced apart from the first area, and a bending area between a first area and a second area and bent along a bending axis are defined; a first thin-film transistor (“TFT”) and a second TFT; and a first conductive layer and a second conductive layer. The first TFT includes: a first active layer including polycrystalline silicon; a first gate electrode; and a first electrode disposed at a level which is the same as a level of the first conductive layer, and the second TFT includes: a second active layer including an oxide semiconductor; a second gate electrode; and a second electrode disposed at a level which is the same as a level of the second conductive layer.

公开(公告)号：US11871596B2

公开(公告)日：2024-01-09

申请号：US17082379

申请日：2020-10-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jaybum Kim ,  Eoksu Kim ,  Kyoungseok Son ,  Junhyung Lim ,  Jihun Lim

IPC: H10K50/805 ,  H10K77/10 ,  H10B10/00 ,  G09G3/32 ,  G09G3/3233 ,  H10K59/121 ,  H10K71/00 ,  H10K50/30 ,  H10K59/12 ,  H01L51/52 ,  H01L51/00 ,  H01L27/11 ,  H01L27/32

CPC classification number: H01L51/5203 ,  G09G3/32 ,  G09G3/3233 ,  H01L27/1108 ,  H01L27/3262 ,  H01L51/0096 ,  G09G2300/0426 ,  G09G2300/0814 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2300/0866 ,  G09G2310/0245 ,  G09G2310/0262 ,  H01L27/3265 ,  H01L51/0023 ,  H01L51/5296 ,  H01L2227/323

Abstract: A display device includes a base substrate, a first transistor, a second transistor, an organic light emitting diode, and a capacitor electrically connected to the first thin film transistor. The first transistor includes a first semiconductor pattern below a first interlayer insulation layer and a first control electrode above the first interlayer insulation layer and below a second interlayer insulation layer. The second transistor includes a second control electrode above the first interlayer insulation layer and below the second interlayer insulation layer. A second semiconductor pattern is above the second interlayer insulation layer.

公开(公告)号：US11309429B2

公开(公告)日：2022-04-19

申请号：US16819496

申请日：2020-03-16

Applicant: Samsung Display Co., Ltd.

Inventor： Joonseok Park ,  Jihun Lim ,  Myounghwa Kim ,  Taesang Kim ,  Yeonkeon Moon

IPC: H01L29/786 ,  H01L29/24 ,  H01L23/532 ,  H01L27/32 ,  H01L29/08 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423

Abstract: A thin film transistor includes an active layer over a substrate, a gate electrode over the active layer, a gate line connected with the gate electrode, and a gate insulation film between the active layer and the gate electrode. The active layer includes a channel region overlapping the gate electrode, and a drain region and a source region on respective sides of the channel region. A length of a straight line connecting the drain region and the source region by a shortest distance may be greater than a width of the gate line parallel to the straight line.

公开(公告)号：US11171193B2

公开(公告)日：2021-11-09

申请号：US16836490

申请日：2020-03-31

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kyoungseok Son ,  Dohyun Kwon ,  Jonghan Jeong ,  Jonghyun Choi ,  Eoksu Kim ,  Jaybum Kim ,  Junhyung Lim ,  Jihun Lim

IPC: H01L27/32 ,  G09G3/3225 ,  G09G3/3233 ,  G09G3/3266 ,  G09G3/3275 ,  H01L27/12 ,  H01L29/786

Abstract: A semiconductor device includes a base substrate, a first transistor disposed on the base substrate, the first transistor including a first input electrode, a first output electrode, a first control electrode, and a first semiconductor pattern including a crystalline semiconductor, a second transistor disposed on the base substrate, the second transistor including a second input electrode, a second output electrode, a second control electrode, and a second semiconductor pattern including an oxide semiconductor, a plurality of insulating layers disposed on the base substrate, and an upper electrode disposed on the first control electrode with at least one insulating layer of the plurality of insulating layers interposed between the upper electrode and the first control electrode. The upper electrode overlaps the first control electrode and forms a capacitor with the first control electrode.

公开(公告)号：US10790467B2

公开(公告)日：2020-09-29

申请号：US16836005

申请日：2020-03-31

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jaybum Kim ,  Eoksu Kim ,  Kyoungseok Son ,  Junhyung Lim ,  Jihun Lim

IPC: H01L51/52 ,  H01L27/11 ,  G09G3/32 ,  G09G3/3233 ,  H01L27/32 ,  H01L51/00

Abstract: A display device includes a base substrate, a first transistor, a second transistor, an organic light emitting diode, and a capacitor electrically connected to the first thin film transistor. The first transistor includes a first semiconductor pattern below a first interlayer insulation layer and a first control electrode above the first interlayer insulation layer and below a second interlayer insulation layer. The second transistor includes a second control electrode above the first interlayer insulation layer and below the second interlayer insulation layer. A second semiconductor pattern is above the second interlayer insulation layer.

公开(公告)号：US10673008B2

公开(公告)日：2020-06-02

申请号：US16459060

申请日：2019-07-01

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jaybum Kim ,  Eoksu Kim ,  Kyoungseok Son ,  Junhyung Lim ,  Jihun Lim

IPC: H01L51/52 ,  H01L51/00 ,  H01L27/11 ,  G09G3/32 ,  G09G3/3233 ,  H01L27/32

Abstract: A display device includes a base substrate, a first transistor, a second transistor, an organic light emitting diode, and a capacitor electrically connected to the first thin film transistor. The first transistor includes a first semiconductor pattern below a first interlayer insulation layer and a first control electrode above the first interlayer insulation layer and below a second interlayer insulation layer. The second transistor includes a second control electrode above the first interlayer insulation layer and below the second interlayer insulation layer. A second semiconductor pattern is above the second interlayer insulation layer.

公开(公告)号：US10409126B2

公开(公告)日：2019-09-10

申请号：US13782823

申请日：2013-03-01

Applicant: SAMSUNG DISPLAY CO., LTD. ,  KOOKMIN UNIVERSITY INDUSTRY ACADEMY COOPERATION FOUNDATION

Inventor： Jihun Lim ,  Byung Du Ahn ,  Gun Hee Kim ,  Junhyun Park ,  Jehun Lee ,  Jaewoo Park ,  Dae Hwan Kim ,  Hyunkwang Jung ,  Jaehyeong Kim

IPC: H01L51/10 ,  G02F1/1362 ,  G02F1/1368 ,  H01L29/417 ,  H01L29/786

Abstract: A thin film transistor includes a gate electrode, a first insulating layer disposed to cover the gate electrode, a semiconductor layer disposed on the first insulating layer that includes a first side surface portion, a source electrode disposed on the semiconductor layer, and a drain electrode disposed on the first insulating layer that includes a second side surface portion. The first side surface portion makes contact with the second side surface portion.

公开(公告)号：US20180366586A1

公开(公告)日：2018-12-20

申请号：US15871468

申请日：2018-01-15

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kyoungseok Son ,  Eoksu Kim ,  Jaybum Kim ,  Junhyung Lim ,  Jihun Lim

IPC: H01L29/786 ,  H01L27/12 ,  H01L27/32 ,  H01L23/485

Abstract: A display apparatus includes: a substrate on which a first area, a second area spaced apart from the first area, and a bending area between a first area and a second area and bent along a bending axis are defined; a first thin-film transistor (“TFT”) and a second TFT; and a first conductive layer and a second conductive layer. The first TFT includes: a first active layer including polycrystalline silicon; a first gate electrode; and a first electrode disposed at a level which is the same as a level of the first conductive layer, and the second TFT includes: a second active layer including an oxide semiconductor; a second gate electrode; and a second electrode disposed at a level which is the same as a level of the second conductive layer.