公开(公告)号：US11563074B2

公开(公告)日：2023-01-24

申请号：US17079278

申请日：2020-10-23

Applicant: Samsung Display Co., Ltd.

Inventor： Hyun Min Cho ,  Tae Wook Kang ,  Sang Gun Choi ,  Shin Il Choi ,  Yun Jung Oh ,  Myoung Geun Cha

IPC: H01L29/08 ,  H01L27/32 ,  H01L51/52 ,  H01L51/56

Abstract: A display apparatus includes: a base substrate; a thin film transistor and a power supply wire on the base substrate; a first electrode on the base substrate, and electrically connected to the thin film transistor; a light emitting layer and a common layer on the first electrode; and a second electrode on the common layer. The power supply wire includes: a first conductive layer; a second conductive layer on the first conductive layer; and a third conductive layer on the second conductive layer. The third conductive layer protrudes more than the second conductive layer on a side surface of the power supply wire, and the second electrode contacts a side surface of the second conductive layer.

公开(公告)号：US10170502B2

公开(公告)日：2019-01-01

申请号：US15380596

申请日：2016-12-15

Applicant: Samsung Display Co., Ltd.

Inventor： Yu-Gwang Jeong ,  Hyun Min Cho ,  Su Bin Bae ,  Shin Il Choi ,  Sang Gab Kim

IPC: H01L27/12 ,  H01L29/417 ,  H01L21/311 ,  G02F1/1368 ,  H01L27/32

Abstract: A transistor array panel is manufactured by a method that reduces or obviates the need for highly selective etching agents or complex processes requiring multiple photomasks to create contact holes. The panel includes: a substrate; a buffer layer positioned on the substrate; a semiconductor layer positioned on the buffer layer; an intermediate insulating layer positioned on the semiconductor layer; and an upper conductive layer positioned on the intermediate insulating layer, wherein the semiconductor layer includes a first contact hole, the intermediate insulating layer includes a second contact hole positioned in an overlapping relationship with the first contact hole, and the upper conductive layer is in contact with a side surface of the semiconductor layer in the first contact hole.

公开(公告)号：US10096716B2

公开(公告)日：2018-10-09

申请号：US15271504

申请日：2016-09-21

Applicant: Samsung Display Co., Ltd.

Inventor： Yu-Gwang Jeong ,  Hyun Min Cho ,  Su Bin Bae ,  Shin Il Choi

IPC: H01L29/10 ,  H01L29/12 ,  H01L29/786 ,  H01L27/12

Abstract: A thin film transistor array panel includes a substrate; a data line disposed on the substrate; a buffer layer disposed on the substrate and spaced apart from the data line in a plan view; a thin film transistor disposed on the buffer layer, the thin film transistor including an oxide semiconductor layer; and a pixel electrode connected to the thin film transistor.

公开(公告)号：US09704896B2

公开(公告)日：2017-07-11

申请号：US15004392

申请日：2016-01-22

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Duk-Sung Kim ,  Shin Il Choi ,  Su Bin Bae ,  Yu-Gwang Jeong

IPC: H01L27/12 ,  G02F1/1362 ,  G02F1/1335 ,  G02F1/1333 ,  G02F1/1343

CPC classification number: H01L27/1259 ,  G02F1/1333 ,  G02F1/133345 ,  G02F1/133516 ,  G02F1/134309 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2001/134372 ,  G02F2001/136222 ,  H01L27/1237 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1262

Abstract: A manufacturing method includes forming a gate member and a common electrode line on a substrate. A gate insulating layer is formed on the gate member and the common electrode line. A semiconductor member and a data member are formed on the gate insulating layer. A first passivation layer is formed on the semiconductor member and the data member. A plurality of color filters is formed on the first passivation layer. A conductor layer and a second passivation layer are formed on the plurality of color filters. A first contact hole exposes a common electrode. A second contact hole exposes the drain electrode. The first and second contact holes are formed by a photolithography process. A pixel electrode connected to the drain electrode is formed through the first contact hole. A connecting member connected to the common electrode line and the common electrode is formed through the second contact hole.

公开(公告)号：US09405156B2

公开(公告)日：2016-08-02

申请号：US13938106

申请日：2013-07-09

Applicant: Samsung Display Co., Ltd.

Inventor： Yong-Hwan Ryu ,  Sang Gab Kim ,  Hong Sick Park ,  Jung Ha Son ,  Shin Il Choi

IPC: G02F1/1341 ,  G02F1/1333

CPC classification number: G02F1/1341 ,  G02F1/133345

Abstract: A liquid crystal display is provided. The liquid crystal display includes a substrate, a thin film transistor disposed on the substrate, a pixel electrode connected with a terminal of the thin film transistor, a microcavity disposed on the pixel electrode, the microcavity including a liquid crystal injection hole disposed at an edge of the microcavity, a supporting member disposed on the microcavity, a first hydrophobic layer disposed on an edge portion of the supporting member, and a capping layer disposed on the supporting member with the capping layer covering the liquid crystal injection hole.

Abstract translation: 提供液晶显示器。 液晶显示器包括基板，设置在基板上的薄膜晶体管，与薄膜晶体管的端子连接的像素电极，设置在像素电极上的微腔，微腔包括设置在边缘的液晶注入孔 设置在所述微腔上的支撑构件，设置在所述支撑构件的边缘部分上的第一疏水层和设置在所述支撑构件上的覆盖层，所述覆盖层覆盖所述液晶注入孔。

公开(公告)号：US09217900B2

公开(公告)日：2015-12-22

申请号：US14578703

申请日：2014-12-22

Applicant: Samsung Display Co., Ltd.

Inventor： Hyang-Shik Kong ,  Sung Hoon Yang ,  Se Hwan Yu ,  Yong Hwan Shin ,  Su Mi Lee ,  Shin Il Choi

IPC: G02F1/1343 ,  G02F1/1337 ,  G02F1/1335

CPC classification number: G02F1/13439 ,  G02F1/133528 ,  G02F2001/133548 ,  G02F2001/133565

Abstract: A manufacturing method of a liquid crystal display includes: forming an etch target layer including a conductive material on a first substrate; forming a first mask layer on the etch target layer; forming a block copolymer coating layer including a plurality of polymers on the first mask layer; processing the block copolymer coating layer to form a block copolymer pattern layer including first and second polymer blocks; removing one of the first or second polymer blocks to form a second mask pattern layer; etching the first mask layer by using the second mask pattern layer as an etching mask to form a first mask pattern layer; and etching the etch target layer by using the first mask pattern layer as an etching mask to form a first electrode. The first electrode includes a plurality of the first minute patterns extending in a predetermined direction and having a polarization function.

Abstract translation: 液晶显示器的制造方法包括：在第一基板上形成包括导电材料的蚀刻目标层; 在所述蚀刻目标层上形成第一掩模层; 在所述第一掩模层上形成包含多个聚合物的嵌段共聚物涂层; 处理嵌段共聚物涂层以形成包含第一和第二聚合物嵌段的嵌段共聚物图案层; 去除所述第一或第二聚合物嵌段之一以形成第二掩模图案层; 通过使用第二掩模图案层作为蚀刻掩模蚀刻第一掩模层以形成第一掩模图案层; 以及通过使用第一掩模图案层作为蚀刻掩模蚀刻蚀刻目标层以形成第一电极。 第一电极包括沿预定方向延伸并且具有偏振功能的多个第一微小图案。

公开(公告)号：US11997914B2

公开(公告)日：2024-05-28

申请号：US17255406

申请日：2018-12-21

Applicant: Samsung Display Co., LTD.

Inventor： Hyun Min Cho ,  Shin Il Choi ,  Sang Gab Kim ,  Tae Sung Kim

IPC: H01L29/786 ,  H10K59/121 ,  H10K59/124 ,  H10K71/16 ,  H10K71/20 ,  H10K71/00 ,  H10K102/00

CPC classification number: H10K71/233 ,  H10K59/1216 ,  H10K59/124 ,  H10K71/166 ,  H10K71/00 ,  H10K2102/00 ,  H10K2102/351

Abstract: A method of manufacturing an organic light-emitting display device is provided. The method includes: forming a lower electrode pattern on a substrate, which includes a transistor area and a capacitor area, to correspond to the transistor area and forming a buffer layer on the substrate including the lower electrode pattern; forming a thin-film transistor including an oxide semiconductor layer on the buffer layer; forming an interlayer insulating film on the thin-film transistor; forming a photoresist film pattern including first and second holes, which have different depths, on the interlayer insulating film; and forming a first contact hole, which exposes the lower electrode pattern, and second contact holes, which expose the oxide semiconductor layer, at the same time using the photoresist film pattern.

公开(公告)号：US11346992B2

公开(公告)日：2022-05-31

申请号：US16714763

申请日：2019-12-15

Applicant: Samsung Display Co., LTD.

Inventor： Chang Ok Kim ,  Chui Min Bae ,  Ji Hye Han ,  Tae Wook Kang ,  Yong Seok Kim ,  Shin Il Choi

IPC: F21V8/00

Abstract: A light unit including: a light source; and an optical member that transmits and converts light emitted from the light source, wherein the optical member includes: a light guide; a low refractive index layer that is disposed on the light guide and has a lower refractive index than that of the light guide; a first capping layer that is disposed on the low refractive index layer; and a wavelength conversion layer that is disposed on the first capping layer and includes quantum dots, and the light guide includes a transparent metal oxide.

公开(公告)号：US11127724B2

公开(公告)日：2021-09-21

申请号：US16691495

申请日：2019-11-21

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Su Bin Bae ,  Yu Gwang Jeong ,  Shin Il Choi ,  Joon Geol Lee ,  Sang Gab Kim

IPC: H01L21/306 ,  H01L25/16 ,  H01L33/20 ,  H01L33/44 ,  H01L33/54 ,  H01L33/62 ,  H01L25/075 ,  H01L33/00 ,  H01L27/12

Abstract: A light emitting diode device includes a thin film transistor substrate having a plurality of light emitting areas, a first diode electrode and a second diode electrode on the thin film transistor substrate, a first passivation pattern between the first diode electrode and the second diode electrode, a plurality of micro light emitting diodes on the first passivation pattern, a first bridge pattern on the micro light emitting diodes and electrically connecting the first diode electrode to the micro light emitting diodes, and a second bridge pattern on the first bridge pattern and electrically connecting the second diode electrode to the micro light emitting diodes, wherein each sidewall of each of the micro light emitting diodes and each sidewall of the first passivation pattern form a same plane.

公开(公告)号：US10423042B2

公开(公告)日：2019-09-24

申请号：US15228549

申请日：2016-08-04

Applicant: Samsung Display Co. Ltd.

Inventor： Joo Hyung Lee ,  Shin Il Choi ,  Kyeong Su Ko ,  Dong Il Kim ,  Jong Mo Yeo

IPC: G02F1/1368 ,  H01L29/417 ,  H01L21/3213 ,  H01L27/12

Abstract: A liquid crystal display device includes a substrate; a gate electrode on the substrate; a semiconductor pattern layer on the gate electrode; and source and drain electrodes on the semiconductor pattern layer and spaced apart from each other. The source electrode includes: a first facing portion facing the drain electrode; and a first protrusion protruding toward the drain electrode from the first protrusion. The drain electrode includes: a second facing portion facing the source electrode; and a second protrusion protruding toward the source electrode from the second facing portion and facing the first protrusion. The semiconductor pattern layer includes: a source area overlapping the source electrode; a drain area overlapping the drain electrode; and a bridge area connecting the source area with the drain area, and a space defined between the first protrusion and the second protrusion is on the bridge area.