公开(公告)号：US20180351534A1

公开(公告)日：2018-12-06

申请号：US15875541

申请日：2018-01-19

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Kyung LEE ,  Jin Suk SON ,  Je Hong KYOUNG ,  Ran Hee SHIN ,  Sung Sun KIM

IPC: H03H9/17 ,  H03H9/13 ,  H03H3/02

Abstract: An acoustic resonator includes a membrane layer disposed on an insulating layer; a cavity formed by the insulating layer and the membrane layer and having a hydrophobic layer disposed on at least one of a portion of an upper surface of the cavity and a portion of a lower surface of the cavity; and a resonating portion disposed on the cavity and having a second electrode on a piezoelectric layer on a first electrode.

公开(公告)号：US20180123554A1

公开(公告)日：2018-05-03

申请号：US15704225

申请日：2017-09-14

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Je Hong KYOUNG ,  Jin Suk SON ,  Hwa Sun LEE ,  Sang Hyun YI

IPC: H03H9/02 ,  H03H3/02

CPC classification number: H03H9/02047 ,  H03H3/02 ,  H03H9/02015 ,  H03H9/02086 ,  H03H9/02118 ,  H03H9/02157 ,  H03H9/173 ,  H03H2003/021 ,  H03H2003/0435 ,  H03H2003/0442

Abstract: A bulk acoustic wave resonator includes a substrate protective layer disposed on a top surface of a substrate, a cavity defined by a membrane layer and the substrate, and a resonating part disposed on the membrane layer. The membrane layer includes a first layer and a second layer, the second layer having the same material as the first layer and having a density greater than that of the first layer.

公开(公告)号：US20170179923A1

公开(公告)日：2017-06-22

申请号：US15085072

申请日：2016-03-30

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Ran Hee SHIN ,  Tae Kyung LEE ,  Sung HAN ,  Yun Sung KANG ,  Sung Sun KIM ,  Jin Suk SON ,  Jeong Suong YANG ,  Hwa Sun LEE ,  Eun Tae PARK

IPC: H03H9/17 ,  H03H3/02 ,  H03H9/02

CPC classification number: H03H9/173 ,  H03H3/02 ,  H03H9/02015 ,  H03H9/02118 ,  H03H9/174 ,  H03H2003/021 ,  H03H2003/023

Abstract: An acoustic resonator and a method of manufacturing the same are provided. The acoustic resonator includes a resonating part including a first electrode, a second electrode, and a piezoelectric layer; and a plurality of seed layers disposed on one side of the resonating part.

公开(公告)号：US20210135651A1

公开(公告)日：2021-05-06

申请号：US16881146

申请日：2020-05-22

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung LEE ,  Ran Hee SHIN ,  Jin Suk SON ,  Je Hong KYOUNG

IPC: H03H9/17 ,  H03H9/05 ,  H03H9/13

Abstract: A bulk acoustic wave resonator includes: a first electrode; a piezoelectric layer disposed on at least a portion of the first electrode; and a second electrode disposed on the piezoelectric layer. The piezoelectric layer contains a dopant, and a value of [a thickness (nm) of the piezoelectric layer x a concentration (at %) of the dopant]/100 is less than or equal to 80.

公开(公告)号：US20210119599A1

公开(公告)日：2021-04-22

申请号：US16875225

申请日：2020-05-15

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung LEE ,  Sang Heon HAN ,  Ran Hee SHIN ,  Jin Suk SON

IPC: H03H9/02 ,  H03H9/13 ,  H03H9/17

Abstract: A bulk-acoustic wave resonator may include: a substrate; a resonator unit including a first electrode disposed on the substrate, a piezoelectric layer disposed on the first electrode, and a second electrode disposed on the piezoelectric layer; and a protective layer disposed on a surface of the resonator unit. The protective layer is formed of a diamond film, and a grain size of the diamond film is 50 nm or more.

公开(公告)号：US20210006226A1

公开(公告)日：2021-01-07

申请号：US16591862

申请日：2019-10-03

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung LEE ,  Ran Hee SHIN ,  Jin Suk SON ,  Je Hong KYOUNG

IPC: H03H9/13 ,  H03H9/02 ,  H03H9/17

Abstract: A bulk-acoustic wave resonator may include: a substrate; a resonance portion; a first electrode disposed on the substrate; a piezoelectric layer disposed on the first electrode in the resonance portion; a second electrode disposed on the piezoelectric portion in the resonance portion; and a seed layer disposed in a lower portion of the first electrode. The seed layer may be formed of titanium (Ti) having a hexagonal close packed (HCP) structure, or an alloy of Ti having the HCP structure. The seed layer may have a thickness greater than or equal to 300 Å and less than or equal to 1000 Å, or may be thinner than the first electrode.

公开(公告)号：US20200266795A1

公开(公告)日：2020-08-20

申请号：US16449561

申请日：2019-06-24

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Kyung LEE ,  Je Hong KYOUNG ,  Sung Sun KIM ,  Jin Suk SON ,  Ran Hee SHIN ,  Hwa Sun LEE

IPC: H03H9/02 ,  H03H9/17

Abstract: A bulk-acoustic wave resonator comprises a substrate, a resonant portion comprising a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on the substrate, and further comprising a center portion and an extension portion that is disposed along a periphery of the center portion, and an insertion layer that is disposed in the extension portion between the first electrode and the piezoelectric layer, and the insertion layer is formed of an aluminum alloy containing scandium (Sc).

公开(公告)号：US20190013792A1

公开(公告)日：2019-01-10

申请号：US15972694

申请日：2018-05-07

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung LEE ,  Sung Sun KIM ,  Sang Kee YOON ,  Chang Hyun LIM ,  Jin Suk SON ,  Ran Hee SHIN ,  Je Hong KYOUNG

IPC: H03H9/17 ,  H03H9/13 ,  H03H3/02 ,  H01L41/047 ,  H01L41/314 ,  H01L41/29

Abstract: An acoustic resonator includes a substrate, a center portion, an extending portion, and a barrier layer. A first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on the substrate in the central portion. The extending portion is configured to extend from the center portion, and includes an insertion layer disposed below the piezoelectric layer. The barrier layer is disposed between the first electrode and the piezoelectric layer.

公开(公告)号：US20180262180A1

公开(公告)日：2018-09-13

申请号：US15808662

申请日：2017-11-09

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung LEE ,  Jin Suk SON ,  Sung Sun KIM ,  Je Hong KYOUNG ,  Hwa Sun LEE ,  Ran Hee SHIN

IPC: H03H9/17 ,  H01L41/16 ,  H01L41/18 ,  H01L41/29 ,  H01L41/39

CPC classification number: H03H9/17 ,  H01L41/16 ,  H01L41/183 ,  H01L41/187 ,  H01L41/29 ,  H01L41/39 ,  H03H3/02 ,  H03H9/02015 ,  H03H9/173 ,  H03H2003/021

Abstract: A film bulk acoustic resonator includes: a first electrode disposed on a substrate; a piezoelectric body disposed on the first electrode and including AlN to which a dopant is added; and a second electrode disposed on the piezoelectric body and facing the first electrode such that the piezoelectric body is interposed between the second electrode and the first electrode, wherein the dopant includes either one of 0.1 to 24 at % of Ta and 0.1 to 23 at % of Nb.

公开(公告)号：US20180183407A1

公开(公告)日：2018-06-28

申请号：US15795337

申请日：2017-10-27

Applicant: Samsung Electro-Mechanics Co., LTD.

Inventor： Tae Kyung LEE ,  Je Hong KYOUNG ,  Jin Suk SON ,  Hwa Sun LEE ,  Ran Hee SHIN

IPC: H03H9/54 ,  H03H9/17

CPC classification number: H03H9/54 ,  H03H3/02 ,  H03H9/02086 ,  H03H9/13 ,  H03H9/171 ,  H03H9/173 ,  H03H2003/021

Abstract: A bulk acoustic wave resonator includes a substrate; and a resonator including a first electrode, a piezoelectric layer, and a second electrode sequentially disposed on the substrate. Either one or both of the first electrode and the second electrode includes an alloy of molybdenum (Mo) and tantalum (Ta).