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公开(公告)号：US20230087049A1
公开(公告)日：2023-03-23
申请号：US17689333
申请日：2022-03-08
发明人： Tae Kyung LEE , Sang Heon HAN , Kwang Su KIM , Sung Joon PARK , Jae Goon AUM
摘要： A bulk acoustic resonator includes: a substrate; a protective layer; and a resonant portion including a piezoelectric layer, a first electrode disposed between the piezoelectric layer and the substrate, and a second electrode disposed between the piezoelectric layer and the protective layer. The protective layer covers a central portion of the resonant portion and a reflective portion surrounding the central portion and formed in a region in which an upper surface of the second electrode rises relative to the central portion. An upper surface of a portion of the protective layer covering the reflective portion is more gently inclined than the upper surface of a portion of the second electrode in the reflective portion.
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公开(公告)号：US20210036683A1
公开(公告)日：2021-02-04
申请号：US16898835
申请日：2020-06-11
发明人： Won HAN , Sung Wook KIM , Dae Hun JEONG , Sang Uk SON , Sang Heon HAN , Jeong Hoon RYOU
摘要： A bulk-acoustic wave resonator includes: a substrate; a lower electrode disposed on the substrate; a piezoelectric layer at least partially covering the lower electrode; and an upper electrode at least partially covering the piezoelectric layer. On a surface of the bulk-acoustic wave resonator, a centroid of an active area in which the lower electrode, the piezoelectric layer, and the upper electrode all overlap each other is aligned with a center of a rectangle defining an aspect ratio of the active area. The active area has a shape of a polygon symmetrical with respect to at least one axis passing through the center of the rectangle defining the aspect ratio. The aspect ratio is greater than or equal to 2 and less than or equal to 10.
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公开(公告)号：US20220116016A1
公开(公告)日：2022-04-14
申请号：US17222018
申请日：2021-04-05
发明人： Won HAN , Sang Uk SON , Tae Yoon KIM , Chang Hyun LIM , Sang Heon HAN , Jong Beom KIM
IPC分类号： H03H9/17
摘要： A bulk acoustic wave resonator includes a substrate, a first electrode, wherein a cavity is formed between the substrate and the first electrode, a piezoelectric layer disposed on the first electrode and overlapping at least a portion of the first electrode, a second electrode disposed on the piezoelectric layer and overlapping at least a portion of the piezoelectric layer, a passivation layer having at least a portion disposed on the second electrode and overlapping at least a portion of the second electrode, and a lower frame spaced apart from the substrate and having a portion of the cavity disposed therebetween. Any one of the second electrode and the passivation layer includes a protruding portion having a first thickness and an extended portion having a second thickness less than the first thickness, and an inner end of the lower frame and an end of the protruding portion are spaced apart horizontally.
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公开(公告)号：US20210320644A1
公开(公告)日：2021-10-14
申请号：US17074978
申请日：2020-10-20
发明人： Jeong Hoon RYOU , Sang Uk SON , Sung Wook KIM , Won HAN , Dae Hun JEONG , Sang Heon HAN
摘要： A bulk-acoustic wave resonator includes: a first electrode; a piezoelectric layer at least partially disposed on an upper portion of the first electrode; and a second electrode disposed to cover at least a portion of the piezoelectric layer. The second electrode includes a frame disposed at an edge of an active region of the bulk-acoustic wave resonator, and the first electrode, the piezoelectric layer and the second electrode are disposed to overlap one another at the edge of the active region. The frame includes a wall disposed at the edge of the active region and a trench formed on an internal side of the wall. An internal boundary line of the trench has a concave-convex shape in a plane parallel to an upper surface of the frame.
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公开(公告)号：US20210119599A1
公开(公告)日：2021-04-22
申请号：US16875225
申请日：2020-05-15
发明人： Tae Kyung LEE , Sang Heon HAN , Ran Hee SHIN , Jin Suk SON
摘要： A bulk-acoustic wave resonator may include: a substrate; a resonator unit including a first electrode disposed on the substrate, a piezoelectric layer disposed on the first electrode, and a second electrode disposed on the piezoelectric layer; and a protective layer disposed on a surface of the resonator unit. The protective layer is formed of a diamond film, and a grain size of the diamond film is 50 nm or more.
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公开(公告)号：US20230072892A1
公开(公告)日：2023-03-09
申请号：US17669597
申请日：2022-02-11
发明人： Sung Tae KIM , Bo Hyun SEO , Tae Seok KO , Sang Heon HAN
摘要： A radio frequency (RF) extractor includes: a first bandpass filter electrically connected between a shared antenna port and a first RF port, disposed in a first chip, and having a first passband; a second bandpass filter electrically connected between the shared antenna port and a second RF port, and disposed in a second chip, and having a second passband; a first notch filter electrically connected to the shared antenna port, disposed in the first chip, and having a first stopband partially overlapping the first passband; and a second notch filter electrically connected to the shared antenna port, disposed in the second chip, and having a second stopband partially overlapping the second passband.
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公开(公告)号：US20220399874A1
公开(公告)日：2022-12-15
申请号：US17511696
申请日：2021-10-27
发明人： Tae Kyung LEE , Sang Heon HAN , Hwa Sun LEE , Jae Goon AUM , Sung HAN
摘要： An acoustic wave resonator package is provided. The acoustic wave resonator package includes an acoustic wave resonator including an acoustic wave generator on a first surface of a substrate; a cover disposed to face the first surface of the substrate; a bonding member disposed between the substrate and the cover, and configured to bond a bonding surface of the acoustic wave generator and the cover to each other, wherein the bonding member includes glass frit, and the bonding surface of the acoustic wave resonator which is bonded to the bonding member may be formed of a dielectric material.
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公开(公告)号：US20220149806A1
公开(公告)日：2022-05-12
申请号：US17226317
申请日：2021-04-09
发明人： Tae Kyung LEE , Sang Heon HAN , Sung Joon PARK , Sang Kee YOON , Sang Hyun YI , Jae Goon AUM
摘要： A bulk acoustic wave resonator includes: a substrate; a resonant portion including a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on the substrate; and a protective layer disposed on an upper surface of the resonant portion. The protective layer includes: a first protective layer formed of a diamond thin film; and a second protective layer stacked on the first protective layer, and formed of a dielectric material.
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公开(公告)号：US20230170872A1
公开(公告)日：2023-06-01
申请号：US17889710
申请日：2022-08-17
发明人： Sang Heon HAN , Sang Uk SON
CPC分类号： H03H9/02015 , H03H9/02086 , H03H9/132 , H03H9/171 , H03H9/131
摘要： A bulk-acoustic wave resonator includes a substrate, a resonance portion including a first electrode, a piezoelectric layer, and a second electrode, stacked in this order on the substrate, and a seed layer disposed below the first electrode, wherein the resonance portion includes an active portion disposed in a central portion of the resonance portion, and a lateral resonance suppressing portion disposed to surround the active portion, wherein a thickness distribution of the seed layer, the first electrode, the piezoelectric layer, and the second electrode in the lateral resonance suppressing portion is different from a thickness distribution in the active portion.
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公开(公告)号：US20230022838A1
公开(公告)日：2023-01-26
申请号：US17579944
申请日：2022-01-20
发明人： Sang Heon HAN , Won HAN , Tae Hun LEE , Chang Hyun LIM , Ran Hee SHIN
摘要： An acoustic resonator includes a substrate and a resonant portion. The resonant portion has a central portion in which a first electrode, a first piezoelectric layer, a second piezoelectric layer, and a second electrode are stacked in order on the substrate, and an extension portion extending outwardly from the central portion and including an insertion layer. A ratio of an average thickness of the first piezoelectric layer to an average thickness of the second piezoelectric layer is 18.4% to 40%.
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