公开(公告)号：US10720901B2

公开(公告)日：2020-07-21

申请号：US15635551

申请日：2017-06-28

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Yoon Kim ,  Tae Kyung Lee ,  Sung Min Cho ,  Sang Kee Yoon ,  Moon Chul Lee

IPC: H01L41/053 ,  H01L41/09 ,  H03H9/17 ,  H03H9/02

Abstract: A bulk acoustic wave resonator includes: a support part disposed on a substrate; a layer disposed on the support part, wherein an air cavity is formed between the support part, the substrate and the layer; and a frame extending along the layer, within the air cavity, and spaced apart from the support part.

公开(公告)号：US10329142B2

公开(公告)日：2019-06-25

申请号：US15091057

申请日：2016-04-05

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Moon Chul Lee ,  Duck Hwan Kim ,  Yeong Gyu Lee ,  Jae Chang Lee ,  Tae Yoon Kim ,  Kyong Bok Min

IPC: B81B7/00 ,  B81C1/00 ,  H01L23/00

Abstract: A wafer level package includes a wafer member having inner cavities in which circuit elements are disposed, element wall members disposed on an internal surface of the wafer member and enclosing element sections in which the circuit elements are disposed, and clearance wall members disposed on external surfaces of the element wall members and dividing a space between the element sections into clearance sections.

公开(公告)号：US10298201B2

公开(公告)日：2019-05-21

申请号：US15385448

申请日：2016-12-20

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Yoon Kim ,  Tae Kyung Lee ,  Moon Chul Lee ,  Sung Min Cho ,  Sang Kee Yoon

IPC: H03H9/17 ,  H03H3/02 ,  H03H9/54 ,  H03H9/02

Abstract: A bulk acoustic wave resonator may include: an air cavity; an etching stop layer and an etching stop part, which define a lower boundary surface and a side boundary surface of the air cavity; and a resonating part formed on an approximately planar surface, which is formed by a upper boundary surface of the air cavity and a top surface of the etching stop part. A width of a top surface of the etching stop part may be greater than a width of a bottom surface of the etching stop part. A side surface of the etching stop part connecting the top surface of the etching stop part to the bottom surface of the etching stop part may be inclined.

公开(公告)号：US10069475B2

公开(公告)日：2018-09-04

申请号：US15462110

申请日：2017-03-17

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung Lee ,  Yong Jin Kang ,  Moon Chul Lee ,  Jae Hyoung Gil ,  Chang Hyun Lim ,  Tae Yoon Kim

IPC: H03H9/54 ,  H01L41/08 ,  H03H3/02 ,  H03H9/60 ,  H01L41/047

Abstract: A bulk-acoustic wave filter device includes: a lower electrode layer disposed on the substrate; a bonding part disposed on the lower electrode layer, at an edge of the substrate; a ground part spaced apart from the bonding part; and a flow suppressing part disposed between the bonding part and the ground part, and offset with respect to the bonding part and the ground part.

公开(公告)号：US20150219456A1

公开(公告)日：2015-08-06

申请号：US14334602

申请日：2014-07-17

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Jong Woon Kim ,  Tae Yoon Kim ,  Seung Mo Lim ,  Heung Woo Park

IPC: G01C19/5705

CPC classification number: G01C19/5705 ,  G01C19/56

Abstract: Disclosed herein is an angular velocity sensor, including: a sensing module including a mass body part which includes a plurality of mass bodies disposed to be parallel with each other, an internal frame which movably supports the mass body, and sensing side flexible parts which rotatably connect the mass body to the internal frame; an external frame supporting the sensing module; and a vibration side flexible part rotatably connecting the sensing module to the external frame, wherein the vibration side flexible part is disposed between the internal frame and the external frame to be parallel with each other with respect to a disposition direction of the mass body part which is disposed in the internal frame.

Abstract translation: 本文公开了一种角速度传感器，包括：感测模块，包括质量体部分，其包括彼此平行设置的多个质量体，可移动地支撑质量体的内部框架，以及可旋转地 将质量体连接到内部框架; 支撑感测模块的外部框架; 以及振动侧柔性部分，其将所述感测模块可旋转地连接到所述外部框架，其中所述振动侧柔性部分设置在所述内部框架和所述外部框架之间，以相对于所述质量体部分的布置方向彼此平行， 设置在内部框架中。

公开(公告)号：US11870419B2

公开(公告)日：2024-01-09

申请号：US17222018

申请日：2021-04-05

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Won Han ,  Sang Uk Son ,  Tae Yoon Kim ,  Chang Hyun Lim ,  Sang Heon Han ,  Jong Beom Kim

IPC: H03H9/17

CPC classification number: H03H9/173

Abstract: A bulk acoustic wave resonator includes a substrate, a first electrode, wherein a cavity is formed between the substrate and the first electrode, a piezoelectric layer disposed on the first electrode and overlapping at least a portion of the first electrode, a second electrode disposed on the piezoelectric layer and overlapping at least a portion of the piezoelectric layer, a passivation layer having at least a portion disposed on the second electrode and overlapping at least a portion of the second electrode, and a lower frame spaced apart from the substrate and having a portion of the cavity disposed therebetween. Any one of the second electrode and the passivation layer includes a protruding portion having a first thickness and an extended portion having a second thickness less than the first thickness, and an inner end of the lower frame and an end of the protruding portion are spaced apart horizontally.

公开(公告)号：US11569793B2

公开(公告)日：2023-01-31

申请号：US16692142

申请日：2019-11-22

Applicant: Samsung Electro-Mechanics., Co., Ltd.

Inventor： Tae Yoon Kim ,  Jong Woon Kim ,  Dae Hun Jeong ,  Moon Chul Lee

IPC: H03H9/02 ,  H01L41/047 ,  H03H9/15 ,  H03H9/13

Abstract: An acoustic resonator includes: a resonating unit including a resonating unit including a piezoelectric layer and first and second electrodes disposed on a lower side and an upper side of the piezoelectric layer, respectively; a substrate disposed on a lower side of the resonating unit; a support unit providing a cavity between the substrate and the resonating unit; and an intermediate metal layer separated from the second electrode and disposed in the resonating unit such that at least a portion thereof is surrounded by the piezoelectric layer and the second electrode.

公开(公告)号：US11424729B2

公开(公告)日：2022-08-23

申请号：US16356164

申请日：2019-03-18

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Hun Lee ,  Tae Yoon Kim ,  Moon Chul Lee ,  Chang Hyun Lim ,  Nam Jung Lee ,  Il Han Lee

IPC: H03H9/02 ,  H03H9/17 ,  H03H3/02

Abstract: A bulk-acoustic wave resonator includes a substrate, a first layer, a second layer, a membrane layer, and a resonance portion. The substrate includes a substrate protection layer. The first layer is disposed on the substrate protection layer. The second layer is disposed outside of the first layer. The membrane layer forms a cavity with the substrate protection layer and the first layer. The resonance portion is disposed on the membrane layer. Either one or both of the substrate protection layer and the membrane layer includes a protrusion disposed in the cavity.

公开(公告)号：US11271543B2

公开(公告)日：2022-03-08

申请号：US16193529

申请日：2018-11-16

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Won Han ,  Sang Uk Son ,  Tae Yoon Kim ,  Jong Woon Kim

IPC: H03H9/17 ,  H03H9/13 ,  H03H9/02

Abstract: A bulk acoustic wave resonator includes: a substrate; a first electrode disposed above the substrate; a piezoelectric layer disposed above at least a portion of the first electrode; and a second electrode disposed above at least a portion of the piezoelectric layer. A first gap is formed between the piezoelectric layer and one of the first and second electrodes. The first gap includes a first inner gap disposed in an active area of the bulk acoustic wave resonator, and having a first spacing distance between the piezoelectric layer and the one of the first and second electrodes, and a first outer gap disposed outwardly of the active area and having a second spacing distance, different than the first spacing distance, between the piezoelectric layer and the one of the first and second electrodes.

公开(公告)号：US10958237B2

公开(公告)日：2021-03-23

申请号：US16395287

申请日：2019-04-26

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Yoon Kim ,  Chang Hyun Lim ,  Sang Kee Yoon ,  Tae Kyung Lee ,  Moon Chul Lee ,  Tae Hun Lee

IPC: H03H9/02 ,  H03H9/17 ,  H03H9/13 ,  H03H9/54 ,  H03H3/02

Abstract: A bulk-acoustic wave resonator includes a substrate, a cavity formed in the substrate, a first electrode, a piezoelectric layer, and a second electrode stacked in order on the substrate, a resonator defined by the first electrode, the piezoelectric layer, and the second electrode overlapping in a vertical direction in an upper portion of the cavity, an additional layer disposed on one surface of the first electrode arranged in a wiring region on an external side of the resonator, and a wiring electrode connected to the first electrode arranged in the wiring region. The first electrode forms a contact interfacial surface with the additional layer and the wiring electrode.