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    METHOD AND SYSTEM FOR PROVIDING A BOTTOM PINNED LAYER IN A PERPENDICULAR MAGNETIC JUNCTION USABLE IN SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY APPLICATIONS
    11.
    发明申请
    METHOD AND SYSTEM FOR PROVIDING A BOTTOM PINNED LAYER IN A PERPENDICULAR MAGNETIC JUNCTION USABLE IN SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY APPLICATIONS 有权
    用于在旋转传动扭矩磁性随机存取存储器应用中可用的全能磁性接头中提供底部引线层的方法和系统

    公开(公告)号：US20160197267A1

    公开(公告)日：2016-07-07

    申请号：US14977145

    申请日：2015-12-21

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Xueti Tang ,  Dustin William Erickson ,  Jang-Eun Lee

    IPC: H01L43/08 ,  H01L27/22 ,  G11C11/16 ,  H01L43/10 ,  H01L43/12 ,  H01L43/02

    CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/222 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

    Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The pinned layer has a perpendicular magnetic anisotropy (PMA) energy greater than its out-of-plane demagnetization energy. Providing the pinned layer includes providing a bulk PMA (B-PMA) layer, providing an interfacial PMA (I-PMA) layer on the B-PMA layer and then providing a sacrificial layer that is a sink for a constituent of the first I-PMA layer. An anneal is then performed. The sacrificial layer and part of the first I-PMA layer are removed after the anneal. Additional I-PMA layer(s) are provided after the removing. A remaining part of the first I-PMA layer and the additional I-PMA layer(s) have a thickness of not more than twenty Angstroms.

    Abstract translation: 描述了用于提供磁结的磁结和方法。 磁结包括由非磁性间隔层隔开的自由和固定层。 当写入电流通过磁结时，自由层可在稳定的磁状态之间切换。 钉扎层具有大于其平面外退磁能的垂直磁各向异性（PMA）能量。 提供被钉扎层包括提供大块PMA（B-PMA）层，在B-PMA层上提供界面PMA（I-PMA）层，然后提供牺牲层，其为第一I- PMA层。 然后进行退火。 在退火之后去除牺牲层和第一I-PMA层的一部分。 在除去后提供额外的I-PMA层。 第一I-PMA层和附加的I-PMA层的剩余部分的厚度不超过二十埃。

    Method and system for providing a bottom pinned layer in a perpendicular magnetic junction usable in spin transfer torque magnetic random access memory applications
    13.
    发明授权
    Method and system for providing a bottom pinned layer in a perpendicular magnetic junction usable in spin transfer torque magnetic random access memory applications 有权
    用于在旋转传递转矩磁性随机存取存储器应用中的垂直磁结中提供底部被钉扎层的方法和系统

    公开(公告)号：US09472750B2

    公开(公告)日：2016-10-18

    申请号：US14977145

    申请日：2015-12-21

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Xueti Tang ,  Dustin William Erickson ,  Jang-Eun Lee

    IPC: H01L21/8234 ,  H01L21/8244 ,  H01L43/08 ,  H01L43/12 ,  H01L43/02 ,  G11C11/16 ,  H01L43/10 ,  H01L27/22

    CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/222 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

    Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The pinned layer has a perpendicular magnetic anisotropy (PMA) energy greater than its out-of-plane demagnetization energy. Providing the pinned layer includes providing a bulk PMA (B-PMA) layer, providing an interfacial PMA (I-PMA) layer on the B-PMA layer and then providing a sacrificial layer that is a sink for a constituent of the first I-PMA layer. An anneal is then performed. The sacrificial layer and part of the first I-PMA layer are removed after the anneal. Additional I-PMA layer(s) are provided after the removing. A remaining part of the first I-PMA layer and the additional I-PMA layer(s) have a thickness of not more than twenty Angstroms.

    Abstract translation: 描述了用于提供磁结的磁结和方法。 磁结包括由非磁性间隔层隔开的自由和固定层。 当写入电流通过磁结时，自由层可在稳定的磁状态之间切换。 钉扎层具有大于其平面外退磁能的垂直磁各向异性（PMA）能量。 提供被钉扎层包括提供大块PMA（B-PMA）层，在B-PMA层上提供界面PMA（I-PMA）层，然后提供牺牲层，其为第一I- PMA层。 然后进行退火。 在退火之后去除牺牲层和第一I-PMA层的一部分。 在除去后提供额外的I-PMA层。 第一I-PMA层和附加的I-PMA层的剩余部分的厚度不超过二十埃。

    METHOD AND SYSTEM FOR REMOVING BORON FROM MAGNETIC JUNCTIONS USABLE IN SPIN TRANSFER TORQUE MEMORY APPLICATIONS
    14.
    发明申请
    METHOD AND SYSTEM FOR REMOVING BORON FROM MAGNETIC JUNCTIONS USABLE IN SPIN TRANSFER TORQUE MEMORY APPLICATIONS 有权
    用于从转子扭转记忆体应用中可用的磁性结移除硼的方法和系统

    公开(公告)号：US20160197270A1

    公开(公告)日：2016-07-07

    申请号：US14981107

    申请日：2015-12-28

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Robert Beach ,  Roman Chepulskyy ,  Dustin William Erickson ,  Vladimir Nikitin

    IPC: H01L43/12 ,  H01L43/08 ,  H01L43/10 ,  H01L43/02

    CPC classification number: H01L43/12 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

    Abstract: A method provides a magnetic junction having a top and sides. A first magnetic layer, a nonmagnetic spacer layer and a second magnetic layer are deposited. The nonmagnetic spacer layer is between the first and second magnetic layers. A free layer is one of the magnetic layers. A reference layer is the other of the magnetic layers. The second magnetic layer includes an amorphous magnetic layer having nonmagnetic constituent(s) that are glass-formming. An anneal is performed in a gas having an affinity for the nonmagnetic constituent(s). The gas includes at least one of first and second gases. The first gas forms a gaseous compound with the nonmagnetic constituent(s) The second gas forms a solid compound with the nonmagnetic constituent(s). The second gas is usable if the anneal is performed after the magnetic junction has been defined. The solid compound is at least on the sides of the magnetic junction.

    Abstract translation: 一种方法提供具有顶部和侧面的磁结。 沉积第一磁性层，非磁性间隔层和第二磁性层。 非磁性间隔层位于第一和第二磁性层之间。 自由层是磁性层之一。 参考层是另一个磁性层。 第二磁性层包括具有玻璃形成的非磁性成分的非晶磁性层。 在对非磁性成分具有亲和性的气体中进行退火。 气体包括第一和第二气体中的至少一种。 第一气体与非磁性成分形成气态化合物第二气体与非磁性成分形成固体化合物。 如果在定义了磁性结后进行退火，则可以使用第二种气体。 固体化合物至少在磁性结的两侧。

    METHOD FOR PROVIDING A PERPENDICULAR MAGNETIC ANISOTROPY MAGNETIC JUNCTION USABLE IN SPIN TRANSFER TORQUE MAGNETIC DEVICES USING A SACRIFICIAL INSERTION LAYER
    15.
    发明申请
    METHOD FOR PROVIDING A PERPENDICULAR MAGNETIC ANISOTROPY MAGNETIC JUNCTION USABLE IN SPIN TRANSFER TORQUE MAGNETIC DEVICES USING A SACRIFICIAL INSERTION LAYER 有权
    用于提供使用真正插入层的旋转传递扭矩磁体装置中的全息磁性异相磁性连接的方法

    公开(公告)号：US20160005954A1

    公开(公告)日：2016-01-07

    申请号：US14712792

    申请日：2015-05-14

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Dustin William Erickson ,  Xueti Tang ,  Jangeun Lee

    IPC: H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L43/08

    CPC classification number: H01L43/12 ,  H01L43/08

    Abstract: A method for providing a magnetic junction usable in a magnetic device and the magnetic junction are described. The method includes providing a free layer, a pinned layer and a nonmagnetic spacer layer between the free layer and the pinned layer. The free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. At least one of the step of providing the free layer includes a first plurality of steps and the step of providing the pinned layer includes a second plurality of steps. The first and second plurality of steps include depositing a portion of a layer, depositing a sacrificial layer, annealing the portion of the magnetic junction under the sacrificial layer, and depositing a remaining portion of the layer. The layer may be the free layer, the pinned layer, or both.

    Abstract translation: 描述了一种用于提供可用于磁性装置和磁结的磁结的方法。 该方法包括在自由层和钉扎层之间提供自由层，钉扎层和非磁性间隔层。 当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。 提供自由层的步骤中的至少一个包括第一多个步骤，并且提供钉扎层的步骤包括第二多个步骤。 第一和第二多个步骤包括沉积层的一部分，沉积牺牲层，将牺牲层下面的磁结的部分退火，以及沉积该层的剩余部分。 该层可以是自由层，钉扎层或两者。

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