公开(公告)号：US09899473B2

公开(公告)日：2018-02-20

申请号：US15261229

申请日：2016-09-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngtek Oh ,  Hyeokshin Kwon ,  Hwansoo Suh ,  Insu Jeon

IPC: H01L21/00 ,  H01L29/00 ,  H01L29/06 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/66 ,  H01L29/775 ,  H01L29/16 ,  H01L21/02 ,  H01L29/78 ,  H01L29/861

CPC classification number: H01L29/0673 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02425 ,  H01L21/02444 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02499 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02601 ,  H01L21/02603 ,  H01L21/02631 ,  H01L21/02639 ,  H01L29/16 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78 ,  H01L29/861

Abstract: Provided are methods of forming nanostructures, methods of manufacturing semiconductor devices using the same, and semiconductor devices including nanostructures. A method of forming a nanostructure may include forming an insulating layer and forming a nanostructure on the insulating layer. The insulating layer may have a crystal structure. The insulating layer may include an insulating two-dimensional (2D) material. The insulating 2D material may include a hexagonal boron nitride (h-BN). The insulating layer may be formed on a catalyst metal layer. The nanostructure may include at least one of silicon (Si), germanium (Ge), and SiGe. The nanostructure may include at least one nanowire.