公开(公告)号：US20250137123A1

公开(公告)日：2025-05-01

申请号：US18830845

申请日：2024-09-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jungmin PARK ,  Haeryong KIM ,  Boeun PARK ,  Jeongil BANG ,  Jooho LEE ,  Hanjin LIM ,  Hyungsuk JUNG ,  Sumin HWANG

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/44 ,  H01L27/06 ,  H10B12/00

Abstract: A method of manufacturing a multi-component thin film includes providing a substrate into a process chamber, performing a first cycle, the first cycle including forming a first atomic layer including a first precursor on the substrate by using an atomic layer deposition process, performing a third cycle, the third cycle including injecting an additive onto the first atomic layer, and performing a second cycle, the second cycle including forming a second atomic layer including a second precursor on the first atomic layer and the additive by using an atomic layer deposition process, wherein a thermal decomposition temperature of the additive is lower than each of a thermal decomposition temperature of the first precursor and a thermal decomposition temperature of the second precursor.

公开(公告)号：US20240297210A1

公开(公告)日：2024-09-05

申请号：US18662107

申请日：2024-05-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggyu SONG ,  Eunae CHO ,  Yongsung KIM ,  Boeun PARK ,  Narae HAN

IPC: H01G4/10

CPC classification number: H01L28/75 ,  H01G4/10

Abstract: A capacitor includes a lower electrode, an upper electrode, a dielectric film between the lower electrode and the upper electrode, and a leakage current reduction film between the upper electrode and the dielectric film. The leakage current reduction film includes a doped AlZrO film, wherein an ionic radius of a dopant contained in the doped AlZrO film is greater than or equal to about 130 picometers (pm).

公开(公告)号：US20240290821A1

公开(公告)日：2024-08-29

申请号：US18444162

申请日：2024-02-16

Applicant: Samsung Electronics Co., Ltd. ,  AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION

Inventor： Hyungjun KIM ,  Sang Woon LEE ,  Se Eun KIM ,  Hye Min LEE ,  Jae Deock JEON ,  Cheheung KIM ,  Boeun PARK ,  Jooho LEE ,  Changsoo LEE

IPC: C23C16/455

CPC classification number: H01L28/55 ,  C23C16/45527 ,  H01L28/91

Abstract: A method of manufacturing, by atomic layer deposition, an electrode including a perovskite type crystal structure represented by Formula 1, includes: forming a vanadium-containing precursor on a substrate; forming a vanadium-containing intermediate phase by reacting the vanadium-containing precursor with oxygen molecules; and forming a first thin film by reacting the vanadium-containing intermediate phase with water.






wherein, in Formula 1,
0.3≤x≤0.7, and
2.5≤y≤3.0.

公开(公告)号：US20240047511A1

公开(公告)日：2024-02-08

申请号：US18145597

申请日：2022-12-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho LEE ,  Boeun PARK ,  Jeongil BANG

IPC: H01G4/008 ,  H01G4/10

CPC classification number: H01L28/75 ,  H01G4/008 ,  H01G4/10

Abstract: Provided are a capacitor and a semiconductor device including the capacitor. The capacitor and the semiconductor device include a first electrode; a second electrode provided apart from the first electrode, a dielectric film between the first electrode and the second electrode, and an interfacial film wholly or at least partially in contact with the dielectric film and having an electron affinity greater than an electron affinity of the dielectric film.

公开(公告)号：US20230402497A1

公开(公告)日：2023-12-14

申请号：US18312383

申请日：2023-05-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyungjun KIM ,  Boeun PARK ,  Jeongil BANG ,  Cheheung KIM ,  Jooho LEE

IPC: H01L21/02 ,  H01G4/10

CPC classification number: H01L28/55 ,  H10B12/30 ,  H01L28/91 ,  H01L28/75 ,  H01G4/10

Abstract: A capacitor may include a first thin-film electrode layer; a second thin-film electrode layer; and a dielectric layer between the first thin-film electrode layer and the second thin-film electrode layer. The first thin-film electrode layer and the second thin-film electrode layer may include a conductive perovskite-type crystal structure. The dielectric layer may include a metal oxide having a dielectric perovskite-type crystal structure. The dielectric layer may be an epitaxial layer. The metal oxide may include a first element in a cubooctahedral site, a second element in an octahedral site, and a third element in an octahedral site. A valency of the third element may be lower than a valency of the second element, and the third element may be a dopant.