公开(公告)号：US20220262829A1

公开(公告)日：2022-08-18

申请号：US17731962

申请日：2022-04-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HYOUN-JEE HA ,  Changhwa Kim ,  Jeongsoon Kang

IPC: H01L27/146

Abstract: A semiconductor device includes a substrate, a gate pattern, and a conductive line pattern. The substrate has a first surface and a second surface and includes an isolation pattern that defines plural pixel regions, and a photoelectric conversion region in each pixel region and a transistor for each of the pixel regions. The gate pattern of the transistor is disposed on the first surface of the substrate. The conductive line pattern is disposed on the first surface of the substrate and vertically overlaps the isolation pattern in plan view. A top surface of the conductive line pattern is located at the same level as a top surface of the gate pattern, a width of the conductive line pattern is less than a width of the isolation pattern, and the isolation pattern comprises a conducive isolation pattern and a dielectric isolation pattern.

公开(公告)号：US10128376B2

公开(公告)日：2018-11-13

申请号：US15613955

申请日：2017-06-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungin Choi ,  Changhwa Kim ,  Taegon Kim ,  Hyunchul Song

IPC: H01L27/148 ,  H01L29/80 ,  H01L29/76 ,  H01L21/00 ,  H01L21/338 ,  H01L21/337 ,  H01L29/78 ,  H01L29/06

Abstract: Semiconductor devices and methods of forming the semiconductor devices are provided. The semiconductor devices may include a substrate, a device isolation layer that defines an active region, an active fin vertically protruding from the active region of the substrate and extending in a horizontal direction, a gate structure traversing the active fin, and a source/drain contact on the active fin on a side of the gate structure. The gate structure may include a gate pattern and a capping pattern on the gate pattern, and the capping pattern may have impurities doped therein. The capping pattern may include a first part and a second part between the first part and the gate pattern. The first and second parts may have impurity concentrations different from each other.

公开(公告)号：US11411052B2

公开(公告)日：2022-08-09

申请号：US17122070

申请日：2020-12-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changhwa Kim ,  Sejung Park ,  Junghun Kim ,  Sangsu Park ,  Kyungrae Byun ,  Beom Suk Lee

IPC: H01L27/30 ,  H01L51/44

Abstract: An image sensor includes an insulating pattern disposed on a semiconductor substrate and having an opening, a color filter disposed within the opening of the insulating pattern, a capping insulating layer disposed on the color filter, a first electrode disposed on the capping insulating layer and having a portion overlapping with the color filter, a separation structure surrounding a side surface of the first electrode, and a photoelectric layer disposed on the first electrode. The separation structure includes a first insulating layer and a second insulating layer formed of different material.

公开(公告)号：US20220238571A1

公开(公告)日：2022-07-28

申请号：US17522142

申请日：2021-11-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Su PARK ,  Kwansik Kim ,  Changhwa Kim ,  Taemin Kim ,  Gyuhyun Lim

IPC: H01L27/146

Abstract: An image sensor includes a substrate including a first surface and a second surface which is opposite to the first portion, and a pixel isolation portion provided in the substrate and configured to isolate unit pixels from each other. The pixel isolation portion includes a first filling insulation pattern extending from the first surface toward the second surface and having an air gap region, the first filling insulation pattern including a first sidewall and a second sidewall which is opposite to the first sidewall, a conductive structure including a first portion on the first sidewall, a second portion on the second sidewall, and a connection portion connecting the first portion and the second portion, and an insulating liner provided between the first portion and the substrate and between the second portion and the substrate.

公开(公告)号：US11348960B2

公开(公告)日：2022-05-31

申请号：US16799287

申请日：2020-02-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyoun-Jee Ha ,  Changhwa Kim ,  Jeongsoon Kang

IPC: H01L27/146

Abstract: An image sensor is provided. The image sensor includes a substrate and a conductive line pattern. The substrate includes an isolation pattern that extends from a bottom surface of the substrate into the substrate and defines pixel regions, and a photoelectric conversion region and a transistor for each of the pixel regions. The conductive line pattern is disposed on a top surface of the substrate, and vertically overlaps the isolation pattern in plan view and electrically connects to transistors of two or more of the pixel regions.

公开(公告)号：US11233087B2

公开(公告)日：2022-01-25

申请号：US16787408

申请日：2020-02-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changhwa Kim ,  JungHun Kim ,  Sang-Su Park ,  Beomsuk Lee ,  Gang Zhang ,  Jaesung Hur

IPC: H01L27/146 ,  H04N5/335 ,  H01L27/148 ,  G02B5/20 ,  H01L25/16

Abstract: Disclosed is an image sensor including a substrate having a first surface and a second surface opposite to each other, a first photoelectric conversion region and a second photoelectric conversion region in the substrate, a through electrode between the first and second photoelectric conversion regions, an insulation structure on the second surface of the substrate, a first color filter and a second color filter respectively provided on the first and second photoelectric conversion regions, and a photoelectric conversion layer on the insulation structure and electrically connected to the through electrode. The through electrode include a first end adjacent to the first surface and a second end adjacent to the second surface. The first end has a non-planar shape.

公开(公告)号：US10522537B2

公开(公告)日：2019-12-31

申请号：US15937093

申请日：2018-03-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changhwa Kim ,  Kyungin Choi ,  Hwichan Jun ,  Inchan Hwang

IPC: H01L27/08 ,  H01L27/088 ,  H01L21/768 ,  H01L21/02 ,  H01L21/8234 ,  H01L23/528 ,  H01L27/02 ,  H01L29/51 ,  H01L29/66 ,  H01L29/78 ,  H01L21/3115 ,  H01L21/311

Abstract: An integrated circuit device includes a substrate including a device active region, a fin-type active region protruding from the substrate on the device active region, a gate line crossing the fin-type active region and overlapping a surface and opposite sidewalls of the fin-type active region, an insulating spacer disposed on sidewalls of the gate line, a source region and a drain region disposed on the fin-type active region at opposite sides of the gate line, a first conductive plug connected the source or drain regions, and a capping layer disposed on the gate line and extending parallel to the gate line. The capping layer includes a first part overlapping the gate line, and a second part overlapping the insulating spacer. The first and second parts have different compositions with respect to each other. The second part contacts the first part and the first conductive plug.

公开(公告)号：US09466724B2

公开(公告)日：2016-10-11

申请号：US14704485

申请日：2015-05-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changjae Yang ,  Shigenobu Maeda ,  Changhwa Kim ,  Youngmoon Choi

IPC: H01L27/12 ,  H01L29/78 ,  H01L29/04

CPC classification number: H01L29/7853 ,  H01L29/045 ,  H01L29/41791 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

Abstract: According to an exemplary embodiment of the present embodiment, a semiconductor device is provided as follows. An active fin protrudes from a substrate, extending in a direction. A gate structure crosses a first region of the active fin. A source/drain is disposed on a second region of the active fin. The source/drain includes upper surfaces and vertical side surfaces. The vertical side surfaces are in substantially parallel with side surfaces of the active fin.

Abstract translation: 根据本实施例的示例性实施例，提供如下的半导体器件。 主动翅片从沿着方向延伸的基底突出。 栅极结构与有源鳍片的第一区域交叉。 源极/漏极设置在有源鳍片的第二区域上。 源极/漏极包括上表面和垂直侧面。 垂直侧表面基本上平行于活动翅片的侧表面。

公开(公告)号：US20250142233A1

公开(公告)日：2025-05-01

申请号：US18885926

申请日：2024-09-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changhwa Kim ,  Gwideok Ryan Lee ,  Doowon Kwon ,  Daehoon Kim ,  Changyong Um

IPC: H04N25/79 ,  H01L27/146

Abstract: A stacked image sensor includes a first semiconductor chip, wherein the first semiconductor chip includes a first contact electrically connected to the first transfer transistor and disposed to extend in a Z-axis direction, a second contact electrically connected to the second transfer transistor and disposed to extend in the Z-axis direction, a plurality of third contacts electrically connected with each of the first floating diffusion region and the second floating diffusion region and disposed to extend in the Z-axis direction, and a first metal region configured to electrically connect the plurality of third contacts to one another and disposed to extend in the Z-axis direction, and the first contact, the second contact, and the first metal region contact a first surface of a first interlayer insulation layer where the first contact, the second contact, and the first metal region are formed.

公开(公告)号：US12191335B2

公开(公告)日：2025-01-07

申请号：US17522142

申请日：2021-11-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Su Park ,  Kwansik Kim ,  Changhwa Kim ,  Taemin Kim ,  Gyuhyun Lim

IPC: H01L27/146

Abstract: An image sensor includes a substrate including a first surface and a second surface which is opposite to the first portion, and a pixel isolation portion provided in the substrate and configured to isolate unit pixels from each other. The pixel isolation portion includes a first filling insulation pattern extending from the first surface toward the second surface and having an air gap region, the first filling insulation pattern including a first sidewall and a second sidewall which is opposite to the first sidewall, a conductive structure including a first portion on the first sidewall, a second portion on the second sidewall, and a connection portion connecting the first portion and the second portion, and an insulating liner provided between the first portion and the substrate and between the second portion and the substrate.