Abstract:
Provided are a dielectric including an oxide represented by Formula 1 below and having a cubic crystal structure, a capacitor including the dielectric, a semiconductor device including the dielectric, and a method of manufacturing the dielectric. (RbxA1-x)(ByTa1-y)O3-δ In Formula 1 above, A is K, Na, Li, Cs, or a combination thereof, B is Nb, V, or a combination thereof, and 0.1≤x≤0.2, 0≤y≤0.2, and 0≤δ≤0.5 are satisfied.
Abstract:
An electrochemical device includes a plurality of electrode assemblies arranged spaced apart from each other in a same direction and a casing member which packages the electrode assemblies, in which the casing member includes a plurality of accommodation portions which accommodates the electrode assemblies, respectively, and a connecting portion which connects between two adjacent accommodation portions, a thickness of the connecting portion is less than a thickness of the accommodation portions, and the connecting portion is bent defining a curved bending portion.
Abstract:
Provided are a capacitor, an electronic device including the same, and a method of manufacturing the same, the capacitor including a first thin-film electrode layer; a second thin-film electrode layer; a dielectric layer between the first thin-film electrode layer and the second thin-film electrode layer; and an interlayer between the dielectric and at least one of the first thin-film electrode layer or the second thin-film electrode layer, the interlayer including a same crystal structure type as and a different composition from at least one of the first thin film electrode layer, the second thin film electrode layer, or the dielectric layer, the interlayer including at least one of a anionized layer or a neutral layer.
Abstract:
A ternary paraelectric having a Cc structure and a method of manufacturing the same are provided. The ternary paraelectric having a Cc structure includes a material having a chemical formula of A2B4O11 that has a monoclinic system, is a space group No. 9, and has a dielectric constant of 150 to 250, wherein “A” is a Group 1 element, and “B” is a Group 5 element. “A” may include one of Na, K, Li and Rb. “B” may include one of Nb, V, and Ta. The A2B4O11 material may be Na2Nb4O11 in which bandgap energy thereof is greater than that of STO. The A2B4O11 material may have relative density that is greater than 90% or more.
Abstract:
A flexible electrochemical device in which a plurality of electrode assemblies is electrically connected to each other so that the flexible electrochemical device may be repeatedly bent, includes at least two electrode assemblies that are arranged separate from each other and a casing member that packs the at least two electrode assemblies and includes at least two accommodation portions in which electrode assemblies are individually received, and a connecting portion that connects the at least two adjacent accommodation portions where a path between a conductive line that electrically connects at least two electrode assemblies together and an electrolyte is defined in the connecting portion.
Abstract:
A flexible secondary battery includes an electrode stack structure including a first electrode layer, a second electrode layer opposite to the first electrode layer and a separator formed between the first electrode layer and the second electrode layer, and a fixing unit disposed in the electrode stack structure at an area excluding opposing end portions of the electrode stack structure, where the fixing unit fixes portions of the first electrode layer, the second electrode layer and the separator, which correspond thereto, to each other. The fixing unit may be disposed at a center portion or an area adjacent to the center portion of the electrode stack structure.