公开(公告)号：US20140042449A1

公开(公告)日：2014-02-13

申请号：US13732746

申请日：2013-01-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woo-chul JEON ,  Jong-seob KIM ,  Ki-yeol PARK ,  Young-hwan PARK ,  Jai-kwang SHIN ,  Jae-joon OH ,  Jong-bong HA ,  Sun-kyu HWANG

IPC: H01L29/778 ,  H01L29/20

CPC classification number: H01L29/778 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/7786

Abstract: According to example embodiments, a high electron mobility transistor (HEMT) includes a channel supply layer that induces a two-dimensional electron gas (2DEG) in a channel layer, a source electrode and a drain electrode that are at sides of the channel supply layer, a depletion-forming layer that is on the channel supply layer and contacts the source electrode, a gate insulating layer on the depletion-forming layer, and a gate electrode on the gate insulating layer. The depletion-forming layer forms a depletion region in the 2DEG.

Abstract translation: 根据示例性实施例，高电子迁移率晶体管（HEMT）包括在通道层中的二维电子气体（2DEG），沟道供应层侧面的源电极和漏电极 在沟道供给层上并与源电极接触的耗尽型层，耗尽型层上的栅极绝缘层和栅极绝缘层上的栅电极。 耗尽形成层在2DEG中形成耗尽区。

公开(公告)号：US20150221746A1

公开(公告)日：2015-08-06

申请号：US14687488

申请日：2015-04-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyuk-soon CHOI ,  Jung-hee LEE ,  Jai-kwang SHIN ,  Jae-joon OH ,  Jong-bong HA ,  Jong-seob KIM ,  In-jun HWANG ,  Ki-ha HONG ,  Ki-sik IM ,  Ki-won KIM ,  Dong-seok KIM

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/205 ,  H01L29/20 ,  H01L29/201

CPC classification number: H01L29/66462 ,  H01L21/0254 ,  H01L21/76237 ,  H01L29/0847 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/207 ,  H01L29/4236 ,  H01L29/7787

Abstract: The methods may include forming a first material layer on a substrate, increasing electric resistance of the first material layer, and forming a source pattern and a drain pattern, which are spaced apart from each other, on the first material layer, a band gap of the source and drain patterns greater than a band gap of a first material layer.

Abstract translation: 所述方法可以包括在衬底上形成第一材料层，增加第一材料层的电阻，以及在第一材料层上形成彼此间隔开的源图案和漏极图案，带隙为 源极和漏极图案大于第一材料层的带隙。

公开(公告)号：US20150008485A1

公开(公告)日：2015-01-08

申请号：US14497585

申请日：2014-09-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： In-jun HWANG ,  Jai-kwang SHIN ,  Jae-joon OH ,  Jong-seob KIM ,  Hyuk-soon CHOI ,  Ki-ha HONG

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/08 ,  H01L29/10

CPC classification number: H01L29/778 ,  H01L29/0847 ,  H01L29/1029 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/4236 ,  H01L29/42364 ,  H01L29/517 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7785 ,  H01L29/7786

Abstract: A High electron mobility transistor (HEMT) includes a source electrode, a gate electrode, a drain electrode, a channel forming layer in which a two-dimensional electron gas (2DEG) channel is induced, and a channel supplying layer for inducing the 2DEG channel in the channel forming layer. The source electrode and the drain electrode are located on the channel supplying layer. A channel increase layer is between the channel supplying layer and the source and drain electrodes. A thickness of the channel supplying layer is less than about 15 nm.

Abstract translation: 高电子迁移率晶体管（HEMT）包括源电极，栅电极，漏电极，其中感应二维电子气（2DEG）沟道的沟道形成层，以及用于诱导2DEG沟道的沟道供应层 在通道形成层中。 源电极和漏极位于沟道供给层上。 通道增加层位于通道供应层和源极和漏极之间。 沟道供应层的厚度小于约15nm。

公开(公告)号：US20140266400A1

公开(公告)日：2014-09-18

申请号：US13973379

申请日：2013-08-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： In-jun HWANG ,  Jong-seob KIM ,  Soo-Gine CHONG

IPC: H03K17/06

CPC classification number: H03K17/063 ,  H03K17/161

Abstract: According to example embodiments, a method of operating a power device includes applying a control voltage to a control electrode of the power device, where the control electrode is electrically separated from a source electrode, a drain electrode, and a gate electrode of the power device. The control voltage is separately applied to the control electrode. The method may include applying a negative control voltage to the control electrode prior to applying a gate voltage to the gate electrode.

Abstract translation: 根据示例实施例，一种操作功率器件的方法包括将控制电压施加到功率器件的控制电极，其中控制电极与功率器件的源电极，漏电极和栅电极电分离 。 控制电压分别施加到控制电极。 该方法可以包括在向栅电极施加栅极电压之前向控制电极施加负控制电压。

公开(公告)号：US20140097470A1

公开(公告)日：2014-04-10

申请号：US13910417

申请日：2013-06-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-seob KIM ,  Kyoung-yeon KIM ,  Joon-yong KIM ,  Jai-kwang SHIN ,  Jae-joon OH ,  Hyuk-soon CHOI ,  Jong-bong HA ,  Sun-kyu HWANG ,  In-jun HWANG

IPC: H01L29/778 ,  H01L29/66

CPC classification number: H01L29/778 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7786

Abstract: According to example embodiments, a HEMT includes a channel supply layer on a channel layer, a p-type semiconductor structure on the channel supply layer, a gate electrode on the p-type semiconductor structure, and source and drain electrodes spaced apart from two sides of the gate electrode respectively. The channel supply layer may have a higher energy bandgap than the channel layer. The p-type semiconductor structure may have an energy bandgap that is different than the channel supply layer. The p-type semiconductor structure may include a hole injection layer (HIL) on the channel supply layer and be configured to inject holes into at least one of the channel layer and the channel supply in an on state. The p-type semiconductor structure may include a depletion forming layer on part of the HIL. The depletion forming layer may have a dopant concentration that is different than the dopant concentration of the HIL.

Abstract translation: 根据示例性实施例，HEMT包括在沟道层上的沟道供应层，沟道供应层上的p型半导体结构，p型半导体结构上的栅电极以及与两侧隔开的源极和漏极 的栅电极。 通道供应层可以具有比沟道层更高的能量带隙。 p型半导体结构可以具有与沟道供给层不同的能量带隙。 p型半导体结构可以包括在沟道供应层上的空穴注入层（HIL），并且被配置为在导通状态下将空穴注入至少一个沟道层和沟道电源。 p型半导体结构可以在HIL的一部分上包括耗尽形成层。 耗尽形成层可以具有不同于HIL的掺杂剂浓度的掺杂剂浓度。

公开(公告)号：US20140021511A1

公开(公告)日：2014-01-23

申请号：US13804188

申请日：2013-03-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woo-chul JEON ,  Kyoung-yeon KIM ,  Jong-seob KIM ,  Joon-yong KIM ,  Ki-yeol PARK ,  Young-hwan PARK ,  Jai-kwang SHIN ,  Jae-joon OH ,  Hyuk-soon CHOI ,  Jong-bong HA ,  Sun-kyu HWANG ,  In-jun HWANG

IPC: H01L29/778 ,  H01L29/66

CPC classification number: H01L29/778 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/475 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/872

Abstract: A high electron mobility transistor (HEMT) according to example embodiments includes a channel layer, a channel supply layer on the channel layer, a source electrode and a drain electrode on at least one of the channel layer and the channel supply layer, a gate electrode between the source electrode and the drain electrode, and a Schottky electrode forming a Schottky contact with the channel supply layer. An upper surface of the channel supply layer may define a Schottky electrode accommodation unit. At least part of the Schottky electrode may be in the Schottky electrode accommodation unit. The Schottky electrode is electrically connected to the source electrode.

Abstract translation: 根据示例实施例的高电子迁移率晶体管（HEMT）包括沟道层，沟道层上的沟道供应层，沟道层和沟道供应层中的至少一个上的源电极和漏电极，栅电极 源极电极和漏极电极之间，肖特基电极与沟道供给层形成肖特基接触。 通道供应层的上表面可以限定肖特基电极调节单元。 肖特基电极的至少一部分可以在肖特基电极调节单元中。 肖特基电极电连接到源电极。