公开(公告)号：US20230187439A1

公开(公告)日：2023-06-15

申请号：US17957654

申请日：2022-09-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Gun YOU ,  Sug Hyun SUNG ,  Chan Kyo PARK ,  Seung Chul OH

IPC: H01L27/088 ,  H01L29/423 ,  H01L29/786 ,  H01L29/06

CPC classification number: H01L27/088 ,  H01L29/42392 ,  H01L29/78696 ,  H01L29/0673

Abstract: There is provided a semiconductor device capable of improving the performance and reliability of a device. The semiconductor device comprising, a first active pattern on a substrate, the first active pattern including a first lower pattern, which extends in a first direction, and first sheet patterns, which are on the first lower pattern, a second active pattern on the substrate, the second active pattern including a second lower pattern, which is spaced apart from the first lower pattern in a second direction and a second sheet patterns, which are on the second lower pattern, wherein the first lower pattern and the second lower pattern is separated by a fin trench.

公开(公告)号：US20200043807A1

公开(公告)日：2020-02-06

申请号：US16599313

申请日：2019-10-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gi Gwan PARK ,  Jung Gun YOU ,  Ki Il KIM ,  Sug Hyun SUNG ,  Myung Yoon UM

IPC: H01L21/8238 ,  H01L27/092 ,  H01L29/66 ,  H01L21/762 ,  H01L21/8234 ,  H01L29/78

Abstract: A method of manufacturing a semiconductor device includes forming a first fin-type pattern and a second fin-type pattern which are separated by a first trench between facing ends thereof, forming a first insulating layer filling the first trench, removing a portion of the first insulating layer to form a second trench on the first insulating layer, and forming a third trench by enlarging a width of the second trench.

公开(公告)号：US20180114791A1

公开(公告)日：2018-04-26

申请号：US15850183

申请日：2017-12-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki Hwan KIM ,  Gi Gwan PARK ,  Jung Gun YOU ,  Dong Suk SHIN ,  Hyun Yul CHOI

IPC: H01L27/092 ,  H01L21/84 ,  H01L27/02 ,  H01L27/088 ,  H01L27/12 ,  H01L29/06 ,  H01L29/08 ,  H01L29/165 ,  H01L29/167 ,  H01L29/417 ,  H01L29/45 ,  H01L29/78

CPC classification number: H01L27/0924 ,  H01L21/823425 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/845 ,  H01L27/0207 ,  H01L27/0886 ,  H01L27/092 ,  H01L27/1211 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/167 ,  H01L29/41766 ,  H01L29/41783 ,  H01L29/41791 ,  H01L29/456 ,  H01L29/78 ,  H01L29/7848 ,  H01L29/785

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate comprising first and second regions, in the first region, first and second gate electrodes formed parallel to each other on the substrate, and being spaced apart from each other by a first distance, in the second region, third and fourth gate electrodes formed parallel to each other on the substrate, and being spaced apart from each other by a second distance which is greater than the first distance, in the first region, a first recess formed on the substrate between the first and second gate electrodes, in the second region, a second recess formed on the substrate between the third and fourth gate electrodes, a first epitaxial source/drain filling the first recess and a second epitaxial source/drain filling the second recess, wherein an uppermost portion of an upper surface of the first epitaxial source/drain is higher than an uppermost portion of an upper surface of the second epitaxial source/drain.

公开(公告)号：US20170221769A1

公开(公告)日：2017-08-03

申请号：US15292790

申请日：2016-10-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： GI GWAN PARK ,  Jung Gun YOU ,  Ki ll KIM ,  Sug Hyun SUNG ,  Myung Yoon UM

IPC: H01L21/8238 ,  H01L21/02 ,  H01L29/06 ,  H01L29/66 ,  H01L21/311 ,  H01L27/092 ,  H01L21/762 ,  H01L21/308

CPC classification number: H01L21/823821 ,  H01L21/76224 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823481 ,  H01L21/823828 ,  H01L21/823878 ,  H01L27/0924 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/7848

Abstract: A method of manufacturing a semiconductor device includes forming a first fin-type pattern and a second fin-type pattern which are separated by a first trench between facing ends thereof, forming a first insulating layer filling the first trench, removing a portion of the first insulating layer to form a second trench on the first insulating layer, and forming a third trench by enlarging a width of the second trench.