Integrated circuits including standard cells and methods of manufacturing the integrated circuits

    公开(公告)号:US10990740B2

    公开(公告)日:2021-04-27

    申请号:US16378751

    申请日:2019-04-09

    Abstract: An integrated circuit may include a first standard cell including first and second active regions extending in a first horizontal direction and a first gate line extending in a second horizontal direction orthogonal to the first horizontal direction; and a second standard cell including third and fourth active regions extending in the first horizontal direction and a second gate line aligned in parallel to the first gate in the second horizontal direction and being adjacent to the first standard cell. A distance between the second active region of the first standard cell and the third active region of the second standard cell may be greater than a distance between the first and second active regions of the first standard cell, and may be greater than a distance between the third and fourth active regions of the second standard cell.

    INTEGRATED CIRCUIT INCLUDING CLUBFOOT STRUCTURE CONDUCTIVE PATTERNS

    公开(公告)号:US20190355750A1

    公开(公告)日:2019-11-21

    申请号:US16409129

    申请日:2019-05-10

    Abstract: An integrated circuit includes a standard cell. The standard cell may include a plurality of gate lines and a plurality of first wirings. The plurality of first wirings may include a clubfoot structure conductive pattern that includes a first conductive pattern and a second conductive pattern spaced apart from each other. Each of the first conductive pattern and the second conductive pattern may include a first line pattern extending in a first direction and a second line pattern protruding from one end of the first line pattern in a direction perpendicular to the first direction. The plurality of gate lines may be spaced apart from each other by a first pitch in the first direction, and the plurality of second wirings may be spaced apart from each other by a second pitch in the first direction. The first pitch may be greater than the second pitch.

    System on chip
    17.
    发明授权

    公开(公告)号:US11201150B2

    公开(公告)日:2021-12-14

    申请号:US16746071

    申请日:2020-01-17

    Abstract: A system on chip includes first to third nanowires extending in a second direction, first to third gate lines respectively surrounding the first to third nanowires, each of the first to third gate lines extending in a first direction across the second direction, a gate isolation region cutting the first to third gate lines and extending in the second direction, a first gate contact formed on the second gate line arranged between the first gate line and the third gate line, and electrically connecting the cut second gate line, a second gate contact formed on the first gate line, a third gate contact formed on the third gate line, a first metal line electrically connecting the second gate contact and the third gate contact; and a second metal line electrically connected to the first gate contact.

    INTEGRATED CIRCUIT INCLUDING A MODIFIED CELL AND A METHOD OF DESIGNING THE SAME

    公开(公告)号:US20180096092A1

    公开(公告)日:2018-04-05

    申请号:US15585548

    申请日:2017-05-03

    Abstract: A method of designing an integrated circuit includes receiving input data defining the integrated circuit, receiving information from a standard cell library including a plurality of standard cells, receiving information from a modified cell library including at least one modified cell having a same function as a corresponding standard cell among the plurality of standard cells and having a higher routability than the corresponding standard cell and generating output data by performing placement and routing in response to the input data, the information from the standard cell library and the information from the modified cell library.

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