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    Semiconductor device
    3.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US09825024B2

    公开(公告)日：2017-11-21

    申请号：US14870141

    申请日：2015-09-30

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Jong-Hoon Jung

    IPC分类号： H01L27/02 ,  H01L27/11 ,  H01L29/78 ,  H01L23/528 ,  H01L27/108

    CPC分类号： H01L27/0292 ,  H01L23/528 ,  H01L23/5286 ,  H01L27/10897 ,  H01L27/1116 ,  H01L28/00 ,  H01L29/78

    摘要： A semiconductor device is provided. The semiconductor device includes an active region, a gate line, a first metal interconnect, a power rail, and a second metal interconnect. The gate line overlaps the active region and extends along a first direction. The first metal interconnect overlaps the active region and the gate line. The first metal interconnect extends along a second direction intersecting the first direction. The power rail is disposed in a higher layer than the first metal interconnect. The power rail extends along the second direction. The second metal interconnect is disposed in a same layer as the power rail, the second metal interconnect extends along the second direction.

    INTEGRATED CIRCUIT INCLUDING CLUBFOOT STRUCTURE CONDUCTIVE PATTERNS
    8.
    发明申请
    INTEGRATED CIRCUIT INCLUDING CLUBFOOT STRUCTURE CONDUCTIVE PATTERNS 审中-公开

    公开(公告)号：US20190355750A1

    公开(公告)日：2019-11-21

    申请号：US16409129

    申请日：2019-05-10

    申请人： Samsung Electronics Co., Ltd.

    发明人： Jung-ho Do ,  Ji-Su Yu ,  Hyeon-gyu You ,  Seung-Young Lee ,  Jae-Boong Lee ,  Jong-Hoon Jung

    IPC分类号： H01L27/118 ,  H01L27/02

    摘要： An integrated circuit includes a standard cell. The standard cell may include a plurality of gate lines and a plurality of first wirings. The plurality of first wirings may include a clubfoot structure conductive pattern that includes a first conductive pattern and a second conductive pattern spaced apart from each other. Each of the first conductive pattern and the second conductive pattern may include a first line pattern extending in a first direction and a second line pattern protruding from one end of the first line pattern in a direction perpendicular to the first direction. The plurality of gate lines may be spaced apart from each other by a first pitch in the first direction, and the plurality of second wirings may be spaced apart from each other by a second pitch in the first direction. The first pitch may be greater than the second pitch.

    STANDARD CELL AND AN INTEGRATED CIRCUIT INCLUDING THE SAME
    9.
    发明申请
    STANDARD CELL AND AN INTEGRATED CIRCUIT INCLUDING THE SAME 审中-公开

    公开(公告)号：US20180294226A1

    公开(公告)日：2018-10-11

    申请号：US15946075

    申请日：2018-04-05

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Jae-Boong Lee ,  Jung-Ho Do ,  Tae-Joong Song ,  Seung-Young Lee ,  Jong-Hoon Jung ,  Ji-Su Yu

    IPC分类号： H01L23/528 ,  H01L27/02 ,  H01L23/522 ,  H01L21/8234

    摘要： An integrated circuit including: a power rail including first and second conductive lines spaced apart from each other in a vertical direction, wherein the first and second conductive lines extend in parallel to each other in a first horizontal direction, and are electrically connected to each other, to supply power to a first standard cell, wherein the first and second conductive lines are disposed at a boundary of the first standard cell; and a third conductive line between the first and second conductive lines and extending in a second horizontal direction orthogonal to the first horizontal direction, to transfer an input signal or an output signal of the first standard cell.