-
公开(公告)号：US11935573B2
公开(公告)日：2024-03-19
申请号：US17735931
申请日：2022-05-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sung Chul Lee , Ung Hwan Pi
CPC classification number: G11C11/161 , H10B61/00 , H10N50/10 , H10N50/80
Abstract: A magnetic memory device includes a first magnetic layer extending in a first direction, a second magnetic layer that extends on and parallel to the first magnetic layer, and a conductive layer extending between the first magnetic layer and the second magnetic layer. The first magnetic layer includes a first region having magnetic moments oriented in a first rotational direction along the first direction. The second magnetic layer includes a second region having magnetic moments oriented in a second rotational direction along the first direction. The second rotational direction is different from the first rotational direction.
-
公开(公告)号：US11348626B2
公开(公告)日：2022-05-31
申请号：US16828429
申请日：2020-03-24
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sung Chul Lee , Ung Hwan Pi
Abstract: A magnetic memory device includes a first magnetic layer extending in a first direction, a second magnetic layer that extends on and parallel to the first magnetic layer, and a conductive layer extending between the first magnetic layer and the second magnetic layer. The first magnetic layer includes a first region having magnetic moments oriented in a first rotational direction along the first direction. The second magnetic layer includes a second region having magnetic moments oriented in a second rotational direction along the first direction. The second rotational direction is different from the first rotational direction.
-
公开(公告)号：US11121309B2
公开(公告)日：2021-09-14
申请号：US16901866
申请日：2020-06-15
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sung Chul Lee , Kwang Seok Kim , Jangeun Lee , Ung Hwan Pi
Abstract: A magnetic memory device may include a perpendicular magnetic structure, an in-plane magnetic structure, a free magnetic pattern between the perpendicular magnetic structure and the in-plane magnetic structure, and a tunnel barrier pattern between the perpendicular magnetic structure and the free magnetic pattern. The perpendicular magnetic structure may include at least one pinned pattern which has a perpendicular magnetization direction that is pinned to a specific direction, and the free magnetic pattern may have a switchable perpendicular magnetization direction. The in-plane magnetic structure may include a first magnetic pattern and a second magnetic pattern, and each of the first and second magnetic patterns may have a different respective in-plane magnetization direction.
-
Patent Agency Ranking
公开(公告)号：US20210028228A1
公开(公告)日：2021-01-28
申请号：US16794845
申请日：2020-02-19
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sung Chul Lee , Eunsun Noh , Jeong-Heon Park , Ung Hwan Pi
Abstract: A magnetic memory device includes a conductive line extending in a first direction, a bottom electrode provided on a portion of a bottom surface of the conductive line, a free layer and a pinned layer stacked on the conductive line, a spacer layer between the free layer and the pinned layer, and a top electrode provided on a portion of a top surface of the pinned layer. The conductive line, the free layer, the pinned layer and the spacer layer have side surfaces perpendicular to the first direction, and the side surfaces are aligned with each other.
-
公开(公告)号：US20190013462A1
公开(公告)日：2019-01-10
申请号：US16114964
申请日：2018-08-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sung Chul Lee , Ki Woong Kim , Sang Hwan Park , Sechung Oh
CPC classification number: H01L43/08 , H01F10/12 , H01F10/3204 , H01F10/3272 , H01L27/222 , H01L43/10 , H01L43/12
Abstract: A magnetic memory device includes a reference magnetic structure, a free magnetic structure, and a tunnel barrier pattern between the reference magnetic structure and the free magnetic structure. The reference magnetic structure includes a first pinned pattern, a second pinned pattern between the first pinned pattern and the tunnel barrier pattern, and an exchange coupling pattern between the first and the second pinned pattern. The second pinned pattern includes a first magnetic pattern adjacent the exchange coupling pattern, a second magnetic pattern adjacent the tunnel barrier pattern, a third magnetic pattern between the first and the second magnetic pattern, a first non-magnetic pattern between the first and the third magnetic pattern, and a second non-magnetic pattern between the second and the third magnetic pattern. The first non-magnetic pattern has a different crystal structure from the second non-magnetic pattern, and at least a portion of the third magnetic pattern is amorphous.
-
公开(公告)号：US12245518B2
公开(公告)日：2025-03-04
申请号：US17490353
申请日：2021-09-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ung Hwan Pi , Seonggeon Park , Jeong-Heon Park , Sung Chul Lee
Abstract: A magnetic memory device includes a first magnetic layer extending in a first direction, a pinned layer on the first magnetic layer, and a second magnetic layer vertically overlapping with the pinned layer with the first magnetic layer interposed between the pinned layer and the second magnetic layer. The first magnetic layer includes, a plurality of magnetic domains arranged in the first direction, and at least one magnetic domain wall between the plurality of magnetic domains, and a magnetization direction of the second magnetic layer is substantially parallel to a top surface of the first magnetic layer.
-
公开(公告)号：US20210104661A1
公开(公告)日：2021-04-08
申请号：US16901866
申请日：2020-06-15
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sung Chul Lee , Kwang Seok Kim , Jangeun Lee , Ung Hwan Pi
Abstract: A magnetic memory device may include a perpendicular magnetic structure, an in-plane magnetic structure, a free magnetic pattern between the perpendicular magnetic structure and the in-plane magnetic structure, and a tunnel barrier pattern between the perpendicular magnetic structure and the free magnetic pattern. The perpendicular magnetic structure may include at least one pinned pattern which has a perpendicular magnetization direction that is pinned to a specific direction, and the free magnetic pattern may have a switchable perpendicular magnetization direction. The in-plane magnetic structure may include a first magnetic pattern and a second magnetic pattern, and each of the first and second magnetic patterns may have a different respective in-plane magnetization direction.
-
公开(公告)号：US10403812B2
公开(公告)日：2019-09-03
申请号：US16114964
申请日：2018-08-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sung Chul Lee , Ki Woong Kim , Sang Hwan Park , Sechung Oh
Abstract: A magnetic memory device includes a reference magnetic structure, a free magnetic structure, and a tunnel barrier pattern between the reference magnetic structure and the free magnetic structure. The reference magnetic structure includes a first pinned pattern, a second pinned pattern between the first pinned pattern and the tunnel barrier pattern, and an exchange coupling pattern between the first and the second pinned pattern. The second pinned pattern includes a first magnetic pattern adjacent the exchange coupling pattern, a second magnetic pattern adjacent the tunnel barrier pattern, a third magnetic pattern between the first and the second magnetic pattern, a first non-magnetic pattern between the first and the third magnetic pattern, and a second non-magnetic pattern between the second and the third magnetic pattern. The first non-magnetic pattern has a different crystal structure from the second non-magnetic pattern, and at least a portion of the third magnetic pattern is amorphous.
-
-
-
-
-
-
-
Search Results
18
records
(took 0.017 seconds)
