Abstract:
Provided are a directional acoustic sensor that detects a direction of sound, a method of detecting a direction of sound, and an electronic device including the directional acoustic sensor. The directional acoustic sensor includes a sound inlet through which a sound is received, a sound outlet through which the sound received through the sound inlet is output, and a plurality of vibration bodies arranged between the sound inlet and the sound outlet, in which one or more of the plurality of vibration bodies selectively react to the sound received by the sound inlet according to a direction of the received sound.
Abstract:
A signal processing method of an audio sensing device is provided. The audio sensing device includes a plurality of resonators, at least some of the plurality of resonators having different frequency bands. The method includes setting a plurality of time frames corresponding to the plurality of resonators, and calculating a sound feature for each of the plurality of time frames, the sound feature being calculated based on an audio signal detected by each of the plurality of the resonators, wherein the plurality of time frames are set independently for each of the frequency bands, and at least some of the plurality of time frames are set to have different time intervals.
Abstract:
A filter system includes a first resonator having a first resonant frequency, and a second resonator having a second resonant frequency different from the first resonant frequency, and electrically connected to the first resonator. A first response characteristic of the first resonator and a second response characteristic of the second resonator with respect to a frequency include a first section in which a first phase of the first resonator is equal to a second phase of the second resonator, and a second section in which the first phase is different from the second phase by 180 degrees. A first electrode of the first resonator is reversely connected to a second electrode of the second resonator.
Abstract:
An ultrasonic diagnosis apparatus may comprise: a probe comprising a transducer configured to transmit a signal to an object and configured to receive an echo signal from the object; a controller configured to control the probe; and/or an image generation unit configured to generate an image of the object based on the echo signal. The controller may be further configured to drive the transducer such that the signal transmitted simultaneously comprises a fundamental frequency and at least one harmonic. A method of generating an ultrasonic image may comprise: transmitting a signal to an object by using a transducer; receiving an echo signal from the object by using the transducer; and/or generating an image of the object based on the echo signal. The transmitting of the signal to the object may comprise driving the transducer such that the signal transmitted simultaneously comprises a fundamental frequency and at least one harmonic.
Abstract:
A semiconductor device includes a semiconductor chip having a semiconductor integrated circuit. A cooling channel is formed in the semiconductor chip. At least a portion of the cooling channel is formed in the semiconductor chip. First wick structures may be arranged on a bottom of the cooling channel that is parallel to an upper surface of the semiconductor chip in a transverse direction. The first wick structures may move a liquid coolant by capillary action in the transverse direction along the bottom of the cooling channel. Second wick structures may be arranged along an inner surface of the vapor chamber and may move the liquid coolant by capillary action in the transverse direction along the inner surface of the vapor chamber.
Abstract:
Provided are a capacitor and a semiconductor device including the same. The capacitor includes a first electrode, a dielectric layer over the first electrode, a second electrode between the first electrode and the dielectric layer, and a third electrode over the dielectric layer and in contact with the dielectric layer such that the dielectric layer is between the second electrode and the third electrode. A thermal expansion coefficient of the first electrode may be greater than a thermal expansion coefficient of the dielectric layer, and a work function of the second electrode may be higher than a work function of the first electrode.
Abstract:
A directional acoustic sensor includes: a support including a first support portion and a second support portion that are separated from each other and face each other; a plurality of first resonators extending in a length direction thereof from the first support portion of the support; and a plurality of second resonators extending in the length direction thereof from the second support portion of the support and facing the plurality of first resonators, wherein each first resonator of the plurality of first resonators has a first end, wherein each second resonator of the plurality of second resonators has a second end, and wherein, in a first resonator arrangement of a region where the plurality of first resonators and the plurality of second resonators face each other, the first ends of the plurality of first resonators and the second ends of the plurality of second resonators form an intersecting structure.
Abstract:
A capacitor structure includes at least one first layer and at least one second layer that are alternately stacked. The at least one first layer includes first electrodes and second electrodes alternately arranged in a first direction, and the at least one second layer includes third electrodes and fourth electrodes alternately arranged in a second direction intersecting the first direction, the third electrodes and the fourth electrodes being electrically connected to the first electrodes and the second electrodes. Each of the first electrodes and the second electrodes includes a base portion and branch portions protruding from the base portion, and the third electrodes and the fourth electrodes are arranged side by side to correspond to the branch portions.
Abstract:
An etching method for forming a vertical structure is provided. The etching method may include: positioning a mask on a substrate, wherein the mask includes an opening pattern and a compensation pattern, and the compensation pattern is disposed at a corner of two adjacent sides of the opening pattern and includes a concave compensation pattern that is indented from one of the two adjacent sides; and forming the vertical structure on the substrate through the opening pattern of the mask by a dry etching process.
Abstract:
A micromechanical resonator includes a support beam having a fixed end, and a free end configured to vibrate. The micromechanical resonator includes a lumped mass disposed on the free end. A height of the lumped mass is greater than a width of the lumped mass.