Abstract:
Methods of operating nonvolatile memory devices include counting a number of consecutive read operations performed on a first memory region within the nonvolatile memory device, and executing a page reclaim operation on the first memory region in response to detecting that a count in the number of consecutive read operations meets or exceeds a threshold count. A page reclaim operation may include checking an error bit level within a page of data stored in a multi-level cell block within the memory device. The page reclaim operation may further include moving page data from the multi-level cell block to a single-level cell block in the memory device and error correcting the page data during the moving.
Abstract:
Disclosed herein is a method and network handover system for handling a data session in a user equipment (UE). The method comprises initiating a data session of at least one application from a plurality of applications with a first communication interface using a first socket of the UE having a first socket file descriptor (SOCKFD) for the data session, detecting a deterioration in a network connection of the first communication interface, identifying a second communication interface, establishing a second socket having a second SOCKFD associated with the second communication interface and migrating the data session from the first communication interface to the second communication interface by mapping the first SOCKFD corresponding to the first socket to the second SOCKFD corresponding to the second socket.
Abstract:
A method of selectively forming a layer according to atomic layer deposition includes providing a substrate which includes a first region consisting of a first material and having a first surface and a second region consisting of a second material and having a second surface, forming a first reaction inhibition layer on the second surface using a reaction inhibitor selectively adsorbed on the second surface, selectively forming a first deposition layer on the first surface using a first precursor and a first reactant, wherein the first reactant reacts with the first precursor to form an atomic layer and does not react with the reaction inhibitor to form the atomic layer, and converting the first reaction inhibition layer on the second surface into a second deposition layer using a second reactant which reacts with the first reaction inhibition layer to form the atomic layer.
Abstract:
A method for detecting a defect on a substrate, including receiving a first image, generating a second image, by converting the first image to grayscale levels, calculating a first gray level value, having a maximum number of pixels in the second image, and second and third gray level values, having a number of pixels in the second image equal to a predetermined fraction of the first gray level value, from a histogram of the number of pixels respective to the grayscale levels of the second image, converting the second image into a third image having pixels at a level lower than that of the first gray level value and a fourth image having pixels at a level equal to or higher than the first gray level value, generating fifth and sixth images by detecting edges by applying a Canny algorithm to the third and fourth images, respectively.
Abstract:
An apparatus for analyzing an active material of a secondary battery may include: a first electrode; a piezoelectric layer on the first electrode; a second electrode on the piezoelectric layer, configured to provide a voltage having a polarity opposite to a polarity of the first electrode; and/or an insulating layer on the second electrode and including a through hole exposing a portion of the second electrode. A method of analyzing an active material of a secondary battery may include: disposing an active material in a through hole of a bulk acoustic resonator, in which a first electrode, a piezoelectric layer, a second electrode, and an insulating layer are stacked; measuring a resonance frequency of the resonator by applying an electric signal to the first and second electrodes of the resonator; and/or measuring a weight of the active material in the through hole, based on the measured resonance frequency.