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    Semiconductor devices
    11.
    发明授权
    Semiconductor devices 有权

    公开(公告)号：US10707254B2

    公开(公告)日：2020-07-07

    申请号：US16152625

    申请日：2018-10-05

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Taeyon Lee ,  Gwideokryan Lee ,  Myungwon Lee

    IPC: H01L27/146

    Abstract: Semiconductor devices are provided. The semiconductor devices may include a substrate, a device isolation pattern in the substrate to electrically isolate a first pixel and a second pixel from each other, a conductive pattern in the device isolation pattern, and a doping layer on a side surface of the device isolation pattern. The doping layer may have a conductivity type different from a conductivity type of the substrate.

    Image sensors
    12.
    发明授权
    Image sensors 有权

    公开(公告)号：US10468460B2

    公开(公告)日：2019-11-05

    申请号：US15787846

    申请日：2017-10-19

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Masaru Ishii ,  GwideokRyan Lee ,  Taeyon Lee

    IPC: H01L27/146 ,  H01L27/30 ,  H04N5/374 ,  H04N5/378 ,  H04N5/359 ,  H04N5/3745

    Abstract: An image sensor includes a photoelectric conversion element and a charge storage node coupled to the photoelectric conversion element. The charge storage node may store photocharges generated in the photoelectric conversion element. The charge storage node may include a floating diffusion region in a semiconductor substrate, a barrier dopant region on the floating diffusion region in the semiconductor substrate, and a charge drain region on the barrier dopant region in the semiconductor substrate, where the semiconductor substrate is associated with a first conductivity type, the floating diffusion region is associated with a second conductivity type, the barrier dopant region is associated with the first conductivity type, and the charge drain region is associated with the second conductivity type.

    Photodetector and image sensor including the same
    14.
    发明授权
    Photodetector and image sensor including the same 有权
    光检测器和图像传感器包括相同的

    公开(公告)号：US09559133B2

    公开(公告)日：2017-01-31

    申请号：US14852016

    申请日：2015-09-11

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： HyunSeok Lee ,  Jung-Kyu Jung ,  Yoondong Park ,  Taeyon Lee

    IPC: H01L27/146 ,  H04N5/33 ,  H01L31/0232 ,  H01L31/09 ,  H04N5/3745

    CPC classification number: H01L27/14625 ,  H01L27/14601 ,  H01L27/14605 ,  H01L27/14614 ,  H01L27/14627 ,  H01L31/02327 ,  H01L31/09 ,  H04N5/332 ,  H04N5/3745

    Abstract: A photodetector may have a structure including conductive patterns and an intermediate layer interposed between the conductive patterns. A length L of at least one side of the second conductive pattern that overlaps the first conductive pattern and the intermediate layer satisfies the equation L=λ/2neff, wherein the neff is an effective refractive index of a surface plasmon waveguide formed of the first conductive pattern, the intermediate layer, and the second conductive pattern during a surface plasmon resonance. Heat generated in the intermediate layer when the electromagnetic wave having the wavelength λ is incident thereon generates a current variation.

    Abstract translation: 光电检测器可以具有包括导电图案和介于导电图案之间的中间层的结构。 与第一导电图案和中间层重叠的第二导电图案的至少一侧的长度L满足方程L =λ/ 2neff，其中neff是由第一导电图案形成的表面等离子体波导的有效折射率 图案，中间层和第二导电图案。 当具有波长λ的电磁波入射时，在中间层产生的热产生电流变化。

    Photodetector and image sensor including the same
    15.
    发明授权
    Photodetector and image sensor including the same 有权
    光检测器和图像传感器包括相同的

    公开(公告)号：US09142577B2

    公开(公告)日：2015-09-22

    申请号：US14092257

    申请日：2013-11-27

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： HyunSeok Lee ,  Jung-Kyu Jung ,  Yoondong Park ,  Taeyon Lee

    IPC: H01L27/14 ,  H01L27/146 ,  H01L31/0232 ,  H01L31/09 ,  H04N5/33 ,  H04N5/3745

    CPC classification number: H01L27/14625 ,  H01L27/14601 ,  H01L27/14605 ,  H01L27/14614 ,  H01L27/14627 ,  H01L31/02327 ,  H01L31/09 ,  H04N5/332 ,  H04N5/3745

    Abstract: A photodetector may have a structure including conductive patterns and an intermediate layer interposed between the conductive patterns. A length L of at least one side of the second conductive pattern that overlaps the first conductive pattern and the intermediate layer satisfies the equation L=λ/2neff, wherein the neff is an effective refractive index of a surface plasmon waveguide formed of the first conductive pattern, the intermediate layer, and the second conductive pattern during a surface plasmon resonance. Heat generated in the intermediate layer when the electromagnetic wave having the wavelength λ is incident thereon generates a current variation.

    Abstract translation: 光电检测器可以具有包括导电图案和介于导电图案之间的中间层的结构。 与第一导电图案和中间层重叠的第二导电图案的至少一侧的长度L满足方程L =λ/ 2neff，其中neff是由第一导电图案形成的表面等离子体波导的有效折射率 图案，中间层和第二导电图案。 当具有波长λ的电磁波入射时，在中间层产生的热产生电流变化。

    Hybrid image sensors having optical and short-wave infrared pixels integrated therein
    16.
    发明授权
    Hybrid image sensors having optical and short-wave infrared pixels integrated therein 有权

    公开(公告)号：US11925040B2

    公开(公告)日：2024-03-05

    申请号：US17729260

    申请日：2022-04-26

    Applicant: Samsung Electronics Co., Ltd. ,  Seoul National University R&DB Foundation

    Inventor： Seung Hyeon Jo ,  Taeyon Lee ,  Tae-Woo Lee

    IPC: H01L27/146 ,  H10K19/20 ,  H10K30/30 ,  H10K30/82 ,  H10K39/32 ,  H10K85/30

    CPC classification number: H10K39/32 ,  H10K19/20 ,  H10K30/353 ,  H10K30/82 ,  H10K85/30

    Abstract: An image sensor pixel includes a substrate having a pixel electrode on a light receiving surface thereof, and a photoelectric conversion layer including a perovskite material, on the pixel electrode. A transparent electrode is provided on the photoelectric conversion layer, and a vertical electrode is provided, which is electrically connected to the pixel electrode and extends at least partially through the substrate. The photoelectric conversion layer includes a perovskite layer, a first blocking layer extending between the pixel electrode and the perovskite layer, and a second blocking layer extending between the transparent electrode and the perovskite layer. The perovskite material may have a material structure of ABX3, A2BX4, A3BX5, A4BX6, ABX4, or An−1BnX3n+1, where: n is a positive integer in a range from 2 to 6; A includes at least one material selected from a group consisting of Na, K, Rb, Cs and Fr; B includes at least one material selected from a divalent transition metal, a rare earth metal, an alkaline earth metal, Ga, In, Al, Sb, Bi, and Po; and X includes at least one material selected from Cl, Br, and I.

    Image sensor and method of manufacturing same
    18.
    发明授权
    Image sensor and method of manufacturing same 有权

    公开(公告)号：US11450704B2

    公开(公告)日：2022-09-20

    申请号：US16878303

    申请日：2020-05-19

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sangsu Park ,  Kwansik Kim ,  Sangchun Park ,  Beomsuk Lee ,  Taeyon Lee

    IPC: H01L27/146 ,  H04N9/04 ,  H04N5/357 ,  H01L51/42 ,  H01L31/032

    Abstract: An image sensor includes pixel regions separated by an isolation region and receiving incident light, color filters respectively disposed on a surface of the semiconductor substrate corresponding to the pixel regions, a cover insulating layer disposed on the surface of the semiconductor substrate and covering the color filters, first transparent electrodes disposed on the cover insulating layer and spaced apart to respectively overlap the color filters, an isolation pattern disposed on the cover insulating layer between the first transparent electrodes and having a trench spaced apart from the first transparent electrodes, a drain electrode disposed in the trench of the isolation pattern, and an organic photoelectric layer and a second transparent electrode sequentially disposed on the first transparent electrodes and the isolation pattern.

    Pixel array and image sensor
    19.
    发明授权
    Pixel array and image sensor 有权

    公开(公告)号：US11134213B2

    公开(公告)日：2021-09-28

    申请号：US16801288

    申请日：2020-02-26

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Myunglae Chu ,  Minwoong Seo ,  Jungchak Ahn ,  Taeyon Lee

    IPC: H04N5/378 ,  H04N5/374 ,  H04N5/335 ,  H04N5/355

    Abstract: A pixel array includes a plurality of pixels. Each of the pixels includes a photoelectric element formed on a substrate and that generates charge from light, and a pixel circuit formed between the photoelectric element and the substrate and that outputs a digital signal value based on an amount of the generated charge. The pixel circuit includes a floating diffusion formed in the substrate and that stores the charge therein, a vertical pixel electrode that connects the floating diffusion to the photoelectric element and extends in a direction perpendicular to the substrate, an analog-to-digital converter that converts an electric potential of the floating diffusion into the digital signal value, and a memory element that stores the digital signal value.

    Image sensor
    20.
    发明授权
    Image sensor 有权

    公开(公告)号：US10861887B2

    公开(公告)日：2020-12-08

    申请号：US15692244

    申请日：2017-08-31

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Gwi-Deok Ryan Lee ,  Taeyon Lee

    IPC: H01L27/146 ,  H01L27/148 ,  H01L31/062

    Abstract: An image sensor may include a substrate including a plurality of unit pixel regions and having first and second surfaces facing each other. Each of the unit pixel regions may include a plurality of floating diffusion parts spaced apart from each other in the substrate, storage nodes provided in the substrate to be spaced apart from and facing the floating diffusion parts, a transfer gate adjacent to a region between the floating diffusion parts and the storage nodes, and photoelectric conversion parts sequentially stacked on one of the first and second surfaces. Each of the photoelectric conversion parts may include common and pixel electrodes respectively provided on top and bottom surfaces thereof and each pixel electrode may be electrically connected to a corresponding one of the storage nodes.

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