-
公开(公告)号：US11223010B2
公开(公告)日：2022-01-11
申请号：US16409905
申请日：2019-05-13
Inventor： Guohan Hu , Younghyun Kim , Daniel C. Worledge
Abstract: Techniques relate to forming a magnetic tunnel junction (MTJ). A synthetic antiferromagnetic reference layer is adjacent to a tunnel barrier layer. The synthetic antiferromagnetic reference layer includes a first magnetic layer, a second magnetic layer, and a reference spacer layer sandwiched between the first magnetic layer and the second magnetic layer. A magnetic free layer is adjacent to the tunnel barrier layer so as to be opposite the synthetic antiferromagnetic reference layer. The synthetic antiferromagnetic reference layer has a thickness of at least one of 3 nanometers (nm), 4 nm, and 3-4 nm.
-
公开(公告)号：US20210043833A1
公开(公告)日：2021-02-11
申请号：US16840741
申请日：2020-04-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jungmin Lee , Younghyun Kim , Junghwan Park , Sechung Oh , Kyungil Hong
Abstract: In a method of manufacturing a magnetoresistive random access memory, a memory structure may be formed on a substrate. The memory structure may include a lower electrode, a magnetic tunnel junction (MTJ) structure, and an upper electrode sequentially stacked. A protection layer including silicon nitride may be formed to cover a surface of the memory structure. The protection layer may be formed by a chemical vapor deposition process using plasma and introducing deposition gases including a silicon source gas, a nitrogen source gas containing no hydrogen and a dissociation gas. Damages of the MTJ structure may be decreased during forming the protection layer. Thus, the MRAM may have improved characteristics.
-
公开(公告)号：US20200066791A1
公开(公告)日：2020-02-27
申请号：US16669071
申请日：2019-10-30
Inventor： Guohan Hu , Younghyun Kim , Jeong-Heon Park , Daniel Worledge
Abstract: A double magnetic tunnel junction includes a bottom reference layer having a first fixed magnetization and a first thickness and formed from at least one material. A first tunnel barrier is on the bottom reference layer. A free layer is on the first tunnel barrier and has a changeable magnetization. A second tunnel barrier is on the free layer. A multilayered top reference layer is formed on the second tunnel barrier having a second fixed magnetization that is opposite to the first fixed magnetization and a second thickness that is smaller than the first thickness, and equal to or greater than the third thickness.
-
公开(公告)号：US10525304B2
公开(公告)日：2020-01-07
申请号：US15852533
申请日：2017-12-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyungsoon Kim , Anthony Chien-der Lee , Donghyun Lee , Jaesung Lee , Konstantin Pavlov , Duarte Joaquin Sanchez , Duseon Oh , Younghyun Kim
IPC: A63B24/00
Abstract: An example apparatus and an example method for detecting user's exercise information in an exercise system are disclosed. An example electronic device includes: at least one sensor; a human body communication circuitry; a conductive member electrically connected with the human body communication circuitry and exposed for user contact; and at least one processor. The at least one processor is configured to detect a user's contact to the conductive member, to control the human body communication circuitry to transmit at least one piece of user information to an external device through a body of the user, and, when exercise information is received from the external device, to store the exercise information.
-
公开(公告)号：US20190288186A1
公开(公告)日：2019-09-19
申请号：US16409905
申请日：2019-05-13
Inventor： Guohan Hu , Younghyun Kim , Daniel C. Worledge
Abstract: Techniques relate to forming a magnetic tunnel junction (MTJ). A synthetic antiferromagnetic reference layer is adjacent to a tunnel barrier layer. The synthetic antiferromagnetic reference layer includes a first magnetic layer, a second magnetic layer, and a reference spacer layer sandwiched between the first magnetic layer and the second magnetic layer. A magnetic free layer is adjacent to the tunnel barrier layer so as to be opposite the synthetic antiferromagnetic reference layer. The synthetic antiferromagnetic reference layer has a thickness of at least one of 3 nanometers (nm), 4 nm, and 3-4 nm.
-
Patent Agency Ranking
公开(公告)号：US20170338404A1
公开(公告)日：2017-11-23
申请号：US15157834
申请日：2016-05-18
Inventor： Guohan Hu , Kwangseok Kim , Younghyun Kim , Jung-Hyuk Lee , Jeong-Heon Park
Abstract: A method for manufacturing a semiconductor device includes forming a magnetic tunnel junction (MTJ) structure comprising a magnetic fixed layer, a non-magnetic barrier layer and a magnetic free layer, and forming a metal oxide cap layer on the MTJ structure, wherein forming the metal oxide cap layer comprises depositing a metal layer on the magnetic free layer, performing an oxidation of the deposited metal layer to form an oxidized metal layer, and depositing a metal oxide layer on the oxidized metal layer.
-
公开(公告)号：US12262641B2
公开(公告)日：2025-03-25
申请号：US17466246
申请日：2021-09-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyungil Hong , Jungmin Lee , Younghyun Kim , Junghwan Park , Heeju Shin , Se Chung Oh
Abstract: A method of fabricating a magnetic memory device comprises forming, on a substrate, a data storage structure including a bottom electrode, a magnetic tunnel junction pattern, and a top electrode, forming a first capping dielectric layer conformally covering lateral and top surfaces of the data storage structure, and forming a second capping dielectric layer on the first capping dielectric layer. The forming the first capping dielectric layer is performed by PECVD in which a first source gas, a first reaction gas, and a first purging gas are supplied. The forming the second capping dielectric layer Is performed by PECVD in which a second source gas, a second reaction gas, and a second purging gas are supplied. The first and second reaction gases are different from each other. The first and second purging gases are different from each other.
-
公开(公告)号：US12241196B2
公开(公告)日：2025-03-04
申请号：US18508493
申请日：2023-11-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyounyoung Lee , Younghyun Kim , Geun Kang
Abstract: A washing machine including a bearing housing to rotatably support a shaft configured to drive the drum and insertable into the tub, the bearing housing including a stator coupling portion to which a stator of a drive motor configured to rotate the shaft is coupled, and a plurality of leg portions spaced apart along a circumferential direction of the stator coupling portion. The plurality of leg portions include a leg plate including a first end connected to the stator coupling portion and a second end formed to extend along a radial direction of the stator coupling portion from the first end, a connection portion provided to connect between adjacent first ends of the plurality of leg portions, a separation space formed between second ends of the plurality of leg portions, and an outer rib formed along an edge of the leg plate and the connection portion.
-
公开(公告)号：US11859334B2
公开(公告)日：2024-01-02
申请号：US17567294
申请日：2022-01-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyounyoung Lee , Younghyun Kim , Geun Kang
CPC classification number: D06F37/269 , D06F37/206 , D06F37/22 , D06F37/264
Abstract: A washing machine including a bearing housing to rotatably support a shaft configured to drive the drum and insertable into the tub, the bearing housing including a stator coupling portion to which a stator of a drive motor configured to rotate the shaft is coupled, and a plurality of leg portions spaced apart along a circumferential direction of the stator coupling portion. The plurality of leg portions include a leg plate including a first end connected to the stator coupling portion and a second end formed to extend along a radial direction of the stator coupling portion from the first end, a connection portion provided to connect between adjacent first ends of the plurality of leg portions, a separation space formed between second ends of the plurality of leg portions, and an outer rib formed along an edge of the leg plate and the connection portion.
-
公开(公告)号：US11495736B2
公开(公告)日：2022-11-08
申请号：US16793336
申请日：2020-02-18
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyungil Hong , Younghyun Kim , Junghwan Park , Sechung Oh , Jungmin Lee
Abstract: A semiconductor device includes a plurality of magnetic tunnel junction (MTJ) structures in an interlayer insulating layer on a substrate. A blocking layer is on the interlayer insulating layer and the plurality of MTJ structures. An upper insulating layer is on the blocking layer. An upper interconnection is on the upper insulating layer. An upper plug is connected to the upper interconnection and a corresponding one of the plurality of MTJ structures and extends into the upper insulating layer and the blocking layer. The blocking layer includes a material having a higher absorbance constant than the upper insulating layer.
-
-
-
-
-
-
-
-
-
Search Results
43
records
(took 0.02 seconds)
