公开(公告)号：US20220075266A1

公开(公告)日：2022-03-10

申请号：US17419657

申请日：2020-03-23

Applicant: Samsung SDI Co., Ltd.

Inventor： Yoojeong CHOI ,  Soonhyung KWON ,  Minsoo KIM ,  Hyeon PARK ,  Shinhyo BAE ,  Jaeyeol BAEK

IPC: G03F7/11 ,  G03F7/16 ,  G03F7/004

Abstract: The present invention relates to a resist underlayer composition and a method of forming patterns using the same.
According to an embodiment, the resist underlayer composition includes a polymer including a structure represented by Chemical Formula 1 at the terminal end and a structural unit represented by Chemical Formula 2 and a structural unit represented by Chemical Formula 3 in the main chain; and a solvent.
Definitions of Chemical Formula 1 to Chemical Formula 3 are the same as described in the detailed description.

公开(公告)号：US20190196332A1

公开(公告)日：2019-06-27

申请号：US16214229

申请日：2018-12-10

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Hyeon PARK

IPC: G03F7/11 ,  G03F7/00 ,  G03F7/20 ,  G03F7/26 ,  C08G61/04

CPC classification number: G03F7/11 ,  C08G61/04 ,  C08G2261/149 ,  C08G2261/1644 ,  G03F7/0035 ,  G03F7/0045 ,  G03F7/2002 ,  G03F7/26

Abstract: A resist underlayer composition and a method of forming patterns, the composition including a solvent; and a polymer having a structure where at least one of a first moiety represented by one of Chemical Formula 1-1 to Chemical Formula 1-3 is combined with a third moiety represented by Chemical Formula 3, or at least one of a second moiety represented by one of Chemical Formula 2-1 to Chemical Formula 2-3 is combined with a third moiety represented by Chemical Formula 3

公开(公告)号：US20240393692A1

公开(公告)日：2024-11-28

申请号：US18624406

申请日：2024-04-02

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Hyeon PARK ,  Ran NAMGUNG ,  Kyoungjin HA ,  Daeseok SONG ,  Minsoo KIM

IPC: G03F7/11 ,  C08F220/28 ,  C09D133/14

Abstract: A resist topcoat composition and a method of forming patterns using the resist topcoat composition are provided. The resist topcoat composition includes a copolymer including a first structural unit represented by Chemical Formula M-1, a second structural unit represented by Chemical Formula M-2, and a third structural unit including at least one of structural units represented by Chemical Formula M-3A, Chemical Formula M-3B, Chemical Formula M-3C, and Chemical Formula M-3D; and a solvent.

公开(公告)号：US20230026579A1

公开(公告)日：2023-01-26

申请号：US17733743

申请日：2022-04-29

Applicant: SAMSUNG SDI CO., LTD. ,  SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ran NAMGUNG ,  Shinhyo BAE ,  Hyeon PARK ,  Daeseok SONG ,  Minki CHON ,  Jun Soo KIM ,  Hyun-Woo KIM ,  Hyun-Ji SONG ,  Young Joo CHOI ,  Suk-Koo HONG

IPC: G03F7/11 ,  C08F220/28 ,  C09D133/16 ,  H01L21/027 ,  H01L21/311

Abstract: A method of forming a photoresist pattern and a semiconductor device on which a photoresist pattern manufactured according to the same is formed. The method includes forming a photoresist pattern on a substrate; coating an organic topcoat composition including an acrylic polymer including a structural unit containing a hydroxy group and a fluorine and an acidic compound on the photoresist pattern; drying and heating the substrate on which the organic topcoat composition is coated to coat it with a topcoat; and spraying a rinse solution including an ether-based compound on the substrate coated with the topcoat to remove the topcoat.

公开(公告)号：US20210240082A1

公开(公告)日：2021-08-05

申请号：US17153095

申请日：2021-01-20

Applicant: Samsung SDI Co., Ltd.

Inventor： Jaeyeol BAEK ,  Soonhyung KWON ,  Minsoo KIM ,  Hyeon PARK ,  Shinhyo BAE ,  Daeseok SONG ,  Yoojeong CHOI

IPC: G03F7/11 ,  G03F7/26 ,  G03F7/004 ,  G03F7/16 ,  C07D251/32

Abstract: A resist underlayer composition includes a polymer including a structural unit represented by Chemical Formula 1, and a solvent. A method of forming patterns uses the resist underlayer composition under a photoresist pattern to enhance the sensitivity of the photoresist to an exposure light source, thereby providing enhanced resolution and faster processing times.

公开(公告)号：US20240337933A1

公开(公告)日：2024-10-10

申请号：US18536373

申请日：2023-12-12

Applicant: SAMSUNG SDI CO., LTD. ,  SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ran NAMGUNG ,  Kyoungjin HA ,  Hyeon PARK ,  Daeseok SONG ,  Minsoo KIM ,  Sanghyun JE ,  Jun Soo KIM ,  Soyeon YOO ,  Su Min PARK ,  Suk-Koo Hong

IPC: G03F7/004 ,  C08F114/16 ,  C08F220/18 ,  C08F220/22 ,  C08K5/05 ,  C08K5/06 ,  H01L21/027

CPC classification number: G03F7/0048 ,  C08F114/16 ,  C08F220/1806 ,  C08F220/22 ,  C08K5/05 ,  C08K5/06 ,  H01L21/0274

Abstract: A resist topcoat composition and a method of forming patterns utilizing the resist topcoat composition are provided. The resist topcoat composition includes a copolymer including a first structural unit represented by Chemical Formula M-1 and a second structural unit represented by Chemical Formula M-2; and a solvent.

公开(公告)号：US20230273523A1

公开(公告)日：2023-08-31

申请号：US18311627

申请日：2023-05-03

Applicant: Samsung SDI Co., Ltd.

Inventor： Jaeyeol BAEK ,  Soonhyung KWON ,  Minsoo KIM ,  Hyeon PARK ,  Shinhyo BAE ,  Daeseok SONG ,  Yoojeong CHOI

IPC: G03F7/11 ,  G03F7/26 ,  C07D251/32 ,  G03F7/16 ,  G03F7/004

CPC classification number: G03F7/11 ,  G03F7/26 ,  C07D251/32 ,  G03F7/168 ,  G03F7/0045

Abstract: A resist underlayer composition includes a polymer including a structural unit represented by Chemical Formula 1, and a solvent. A method of forming patterns uses the resist underlayer composition under a photoresist pattern to enhance the sensitivity of the photoresist to an exposure light source, thereby providing enhanced resolution and faster processing times.

公开(公告)号：US20230032354A1

公开(公告)日：2023-02-02

申请号：US17847794

申请日：2022-06-23

Applicant: SAMSUNG SDI CO., LTD. ,  SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ran NAMGUNG ,  Minsoo KIM ,  Hyeon PARK ,  Daeseok SONG ,  Minki CHON ,  Jun Soo KIM ,  Hyun-Woo KIM ,  Hyun-Ji SONG ,  Young Joo CHOI ,  Suk-Koo HONG

IPC: G03F7/11 ,  C08F20/28 ,  C09D133/16 ,  H01L21/027

Abstract: A method for forming photoresist patterns and a semiconductor device on which a photoresist pattern manufactured according to the method is formed are disclosed. The method includes forming a preliminary photoresist pattern on a substrate; coating an organic topcoat composition including an acrylic polymer, the acrylic polymer including a structural unit containing a hydroxy group and a fluorine, and an acid compound on the preliminary photoresist pattern; drying and heating the substrate on which the organic topcoat composition is coated to coat it with a topcoat; and spraying a rinse solution including an acetate-based compound on the substrate coated with the topcoat to remove the topcoat.

公开(公告)号：US20230028244A1

公开(公告)日：2023-01-26

申请号：US17749899

申请日：2022-05-20

Applicant: SAMSUNG SDI CO., LTD. ,  SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ran NAMGUNG ,  Daeseok SONG ,  Minsoo KIM ,  Hyeon PARK ,  Minki CHON ,  Jun Soo KIM ,  Hyun-Woo KIM ,  Hyun-Ji SONG ,  Young Joo CHOI ,  Suk-Koo HONG

IPC: G03F7/11 ,  C09D133/16 ,  G03F7/16

Abstract: A resist topcoat composition and a method of forming patterns using the resist topcoat composition are provided. The resist topcoat resist topcoat composition includes an acrylic polymer including a structural unit containing a hydroxy group and a fluorine; at least one acid compound selected from a sulfonic acid compound containing at least one fluorine, a sulfonimide compound containing at least one fluorine, and a carboxylic acid compound containing at least one fluorine; and a solvent.

公开(公告)号：US20230026721A1

公开(公告)日：2023-01-26

申请号：US17734772

申请日：2022-05-02

Applicant: SAMSUNG SDI CO., LTD. ,  SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ran NAMGUNG ,  Hyeon PARK ,  Minsoo KIM ,  Daeseok SONG ,  Minki CHON ,  Jun Soo KIM ,  Hyun-Woo KIM ,  Hyun-Ji SONG ,  Young Joo CHOI ,  Suk-Koo HONG

IPC: G03F7/11 ,  C08F220/28 ,  C09D133/16

Abstract: A resist topcoat composition and a method of forming patterns utilizing the resist topcoat composition are disclosed. The resist topcoat composition includes an acrylic polymer comprising a structural unit comprising a hydroxy group and a fluorine; a mixture comprising a first acid compound comprising at least one fluorine; and a second acid compound different from the first acid compound and comprising at least one fluorine, the first acid compound and the second acid compound are each independently selected from a sulfonic acid compound and a sulfonimide compound, the first acid compound and the second acid compound being in a weight ratio of about 1:0.1 to about 1:50; and a solvent.