公开(公告)号：US20250044686A1

公开(公告)日：2025-02-06

申请号：US18764931

申请日：2024-07-05

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Yaeun SEO ,  Jimin KIM ,  Minyoung LEE ,  Eunmi KANG ,  Taegeun SEONG ,  Changsoo WOO ,  Sumin JANG ,  Bukeun OH ,  Chungheon LEE

IPC: G03F7/004 ,  G03F7/00 ,  G03F7/039

Abstract: Disclosed is a method of forming patterns including coating a metal-containing resist composition on a substrate; a heat treatment including drying and heating to form a metal-containing resist layer on the substrate; exposing a metal-containing resist layer using a patterned mask; and developing including coating a developer composition to remove unexposed regions to form a resist pattern, wherein the coating the metal-containing resist composition is performed by coating the metal-containing resist composition with a spin coater at a speed of about 100 to about 1,500 rpm for about 60 to about 120 seconds, the heating is performed at a temperature of about 90 to about 200° C. for about 30 to about 120 seconds, the exposing the metal-containing resist layer is performed by irradiating extreme ultraviolet light, light having a wavelength of about 5 nm to about 50 nm, or a combination thereof.

公开(公告)号：US20240027899A1

公开(公告)日：2024-01-25

申请号：US18199843

申请日：2023-05-19

Applicant: SAMSUNG SDI CO., LTD

Inventor： Seung HAN ,  Sangkyun IM ,  Minyoung LEE ,  Jimin KIM ,  Yaeun SEO ,  Bukeun OH

IPC: G03F7/004 ,  G03F7/20 ,  G03F7/11

CPC classification number: G03F7/0042 ,  G03F7/2006 ,  G03F7/11

Abstract: A semiconductor photoresist composition includes a first organometallic compound, a second organometallic compound, and a solvent. A method of forming patterns utilizing the same is provided.

公开(公告)号：US20230384667A1

公开(公告)日：2023-11-30

申请号：US18155545

申请日：2023-01-17

Applicant: Samsung SDI Co., Ltd.

Inventor： Seol Hee LIM ,  Jaebum LIM ,  Yaeun SEO ,  Sumin JANG ,  Soobin LIM ,  Minyoung LEE ,  Jimin KIM ,  Jaeyeol BAEK ,  Eunmi KANG ,  Changsoo WOO

IPC: G03F7/004 ,  C07F7/22 ,  H01L21/027 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213

CPC classification number: G03F7/0042 ,  C07F7/2224 ,  H01L21/0271 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/32139

Abstract: A semiconductor photoresist composition including an organometallic compound represented by Chemical Formula 1 and a solvent and a method of forming patterns using the same are disclosed.