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1.
公开(公告)号:US20230384667A1
公开(公告)日:2023-11-30
申请号:US18155545
申请日:2023-01-17
Applicant: Samsung SDI Co., Ltd.
Inventor: Seol Hee LIM , Jaebum LIM , Yaeun SEO , Sumin JANG , Soobin LIM , Minyoung LEE , Jimin KIM , Jaeyeol BAEK , Eunmi KANG , Changsoo WOO
IPC: G03F7/004 , C07F7/22 , H01L21/027 , H01L21/308 , H01L21/311 , H01L21/3213
CPC classification number: G03F7/0042 , C07F7/2224 , H01L21/0271 , H01L21/3081 , H01L21/31144 , H01L21/32139
Abstract: A semiconductor photoresist composition including an organometallic compound represented by Chemical Formula 1 and a solvent and a method of forming patterns using the same are disclosed.
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2.
公开(公告)号:US20240345478A1
公开(公告)日:2024-10-17
申请号:US18587344
申请日:2024-02-26
Applicant: SAMSUNG SDI CO., LTD.
Inventor: Soobin LIM , Young Keun KIM , Eunmi KANG , Seol Hee LIM
IPC: G03F7/004 , C07F7/22 , H01L21/027 , H01L21/311 , H01L21/3213
CPC classification number: G03F7/0042 , C07F7/2224 , H01L21/0271 , H01L21/31144 , H01L21/32139
Abstract: Disclosed are a semiconductor photoresist composition including an organotin compound represented by Chemical Formula 1, and a solvent, a method of forming patterns using the same.
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3.
公开(公告)号:US20250155799A1
公开(公告)日:2025-05-15
申请号:US18917822
申请日:2024-10-16
Applicant: SAMSUNG SDI CO., LTD.
Inventor: Soobin LIM , Yaeun SEO , Sumin JANG , Changsoo WOO , Minyoung LEE , Taegeun SEONG , Eunmi KANG , Jimin KIM , Seungwoo JANG , Seung-Wook SHIN
IPC: G03F7/004 , G03F7/00 , G03F7/16 , H01L21/027
Abstract: A semiconductor photoresist composition including an organometallic compound; and a mixed solvent including an alcohol-based compound and a non-alcohol-based compound in a weight ratio of about 1:99 to about 30:70.
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4.
公开(公告)号:US20250054758A1
公开(公告)日:2025-02-13
申请号:US18787853
申请日:2024-07-29
Applicant: SAMSUNG SDI CO., LTD.
Inventor: Dong Wan RYU , Eunmi KANG , Young Keun Kim , Seol Hee LIM , Soobin LIM , Sukil KANG
IPC: H01L21/027 , H01L21/02 , H01L21/311 , H01L21/3205 , H01L21/3213
Abstract: A semiconductor photoresist composition includes: an organic tin compound represented by Chemical Formula 1; and a solvent: where the detailed description of Chemical Formula 1 is as described in the specification. In addition, a method of forming patterns includes: forming an etching-objective layer on a substrate; coating the semiconductor photoresist composition on the etching-objective layer to form a photoresist layer; patterning the photoresist layer to form a photoresist pattern; and etching the etching-objective layer with the photoresist pattern as an etching mask.
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5.
公开(公告)号:US20240345477A1
公开(公告)日:2024-10-17
申请号:US18587235
申请日:2024-02-26
Applicant: SAMSUNG SDI CO., LTD.
Inventor: Dong Wan RYU , Young Keun KIM , Seol Hee LIM , Soobin LIM , Sukil KANG
CPC classification number: G03F7/0042 , G03F7/0048 , G03F7/027 , G03F7/2006
Abstract: Disclosed are a semiconductor photoresist composition including an organometallic compound represented by Chemical Formula 1, and a solvent, a method of forming patterns using the same.
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6.
公开(公告)号:US20240241437A1
公开(公告)日:2024-07-18
申请号:US18473132
申请日:2023-09-22
Applicant: SAMSUNG SDI CO., LTD.
Inventor: Seol Hee LIM , Changsoo WOO , Young Keun KIM , Dong Wan RYU , Soobin LIM , Sukil KANG , Eunmi KANG
CPC classification number: G03F7/0042 , C07F7/2284
Abstract: A semiconductor photoresist composition and a method of forming patterns using the semiconductor photoresist composition are disclosed. The semiconductor photoresist composition may include an organotin compound represented by Chemical Formula 1 and a solvent.
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7.
公开(公告)号:US20240061336A1
公开(公告)日:2024-02-22
申请号:US18323358
申请日:2023-05-24
Applicant: SAMSUNG SDI CO., LTD.
Inventor: Changsoo WOO , Seung HAN , Seungyong CHAE , Minyoung LEE , Jimin KIM , Sumin JANG , Sangkyun IM , Yaeun SEO , Eunmi KANG , Soobin LIM , Kyungsoo MOON
CPC classification number: G03F7/039 , G03F7/0045 , G03F7/0044
Abstract: A semiconductor photoresist composition and a method of forming patterns utilizing the semiconductor photoresist composition are disclosed. The semiconductor photoresist composition may include a first organometallic compound represented by Chemical Formula 1, a second organometallic compound represented by Chemical Formula 2, and a solvent, where the first organometallic compound is different from the second organometallic compound, at least one selected from among R1 and L1 may include a tertiary carbon, and at least one selected from among R2 and L2 may include at least one selected from among a primary carbon and a secondary carbon.
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