公开(公告)号：US20230384667A1

公开(公告)日：2023-11-30

申请号：US18155545

申请日：2023-01-17

Applicant: Samsung SDI Co., Ltd.

Inventor： Seol Hee LIM ,  Jaebum LIM ,  Yaeun SEO ,  Sumin JANG ,  Soobin LIM ,  Minyoung LEE ,  Jimin KIM ,  Jaeyeol BAEK ,  Eunmi KANG ,  Changsoo WOO

IPC: G03F7/004 ,  C07F7/22 ,  H01L21/027 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213

CPC classification number: G03F7/0042 ,  C07F7/2224 ,  H01L21/0271 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/32139

Abstract: A semiconductor photoresist composition including an organometallic compound represented by Chemical Formula 1 and a solvent and a method of forming patterns using the same are disclosed.

公开(公告)号：US20210179519A1

公开(公告)日：2021-06-17

申请号：US17117324

申请日：2020-12-10

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Jaebum LIM

IPC: C07C15/14 ,  C01B32/184 ,  C07F5/05 ,  G03F7/11 ,  G03F7/09

Abstract: A compound, a synthesis method of the compound, a hardmask composition including the compound, and a method of forming patterns using the hardmask composition, the compound including a condensed or non-condensed polycyclic aromatic core having 40 or more carbon atoms and a plurality of substituents at a periphery of the core, wherein the plurality of substituents are each independently a substituted or unsubstituted C3 to C20 branched alkyl group, a C6 to C30 aryl group substituted with a substituted or unsubstituted C3 to C20 branched alkyl group, a C3 to C30 cycloalkyl group substituted with a substituted or unsubstituted C3 to C20 branched alkyl group, a C3 to C30 heterocyclic group substituted with a substituted or unsubstituted C3 to C20 branched alkyl group, or a combination thereof.

公开(公告)号：US20190233576A1

公开(公告)日：2019-08-01

申请号：US16339451

申请日：2017-07-21

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Hyeonil JUNG ,  Sunghwan KIM ,  Seunghyun KIM ,  Yushin PARK ,  Jaebum LIM

IPC: C08G61/12 ,  H01L21/033 ,  H01L21/027 ,  H01L21/02 ,  C08G61/10 ,  G03F7/16 ,  G03F7/20 ,  G03F7/26 ,  C09D165/00

CPC classification number: C08G61/124 ,  C08G61/02 ,  C08G61/10 ,  C08G61/12 ,  C08G2261/11 ,  C08G2261/1414 ,  C08G2261/1422 ,  C08G2261/148 ,  C08G2261/228 ,  C08G2261/314 ,  C08G2261/3241 ,  C09D165/00 ,  G03F7/00 ,  G03F7/09 ,  G03F7/162 ,  G03F7/168 ,  G03F7/20 ,  G03F7/26 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/027 ,  H01L21/0276 ,  H01L21/033 ,  H01L21/0332 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/32139

Abstract: Disclosed are a polymer including a structural unit represented by Chemical Formula 1 and a structural unit represented by Chemical Formula 2, an organic layer composition including the polymer, and a method of forming patterns using the organic layer composition. The Chemical Formulae 1 and 2 are the same as defined in the specification.

公开(公告)号：US20220334489A1

公开(公告)日：2022-10-20

申请号：US17642734

申请日：2020-06-03

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Jaebum LIM

IPC: G03F7/20 ,  G03F7/004 ,  G03F7/11 ,  C07D403/10 ,  C07C43/285

Abstract: The present invention relates to a hardmask composition including a compound represented by Chemical Formula 1 and a solvent, a hardmask layer including a cured product of the hardmask composition, and a pattern forming method using the hardmask composition. In Chemical Formula 1, the definitions of A, R1 to R5, and n are as described in the specification.

公开(公告)号：US20200017678A1

公开(公告)日：2020-01-16

申请号：US16455942

申请日：2019-06-28

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Jaebum LIM ,  Sunyoung YANG ,  Sunghwan KIM ,  Seunghyun KIM ,  Yushin PARK

IPC: C08L65/02 ,  H01L21/027 ,  H01L21/3213 ,  G03F7/11

Abstract: A hardmask composition, a hardmask layer, and a method of forming patterns, the composition including a solvent; and a polymer that includes a substituted biphenylene structural unit, wherein one phenylene of the biphenylene of the substituted biphenylene structural unit is substituted with at least one of a hydroxy-substituted C6 to C30 aryl group, and a hydroxy-substituted C3 to C30 heteroaryl group.