公开(公告)号：US20230384667A1

公开(公告)日：2023-11-30

申请号：US18155545

申请日：2023-01-17

Applicant: Samsung SDI Co., Ltd.

Inventor： Seol Hee LIM ,  Jaebum LIM ,  Yaeun SEO ,  Sumin JANG ,  Soobin LIM ,  Minyoung LEE ,  Jimin KIM ,  Jaeyeol BAEK ,  Eunmi KANG ,  Changsoo WOO

IPC: G03F7/004 ,  C07F7/22 ,  H01L21/027 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213

CPC classification number: G03F7/0042 ,  C07F7/2224 ,  H01L21/0271 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/32139

Abstract: A semiconductor photoresist composition including an organometallic compound represented by Chemical Formula 1 and a solvent and a method of forming patterns using the same are disclosed.

公开(公告)号：US20240061336A1

公开(公告)日：2024-02-22

申请号：US18323358

申请日：2023-05-24

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Changsoo WOO ,  Seung HAN ,  Seungyong CHAE ,  Minyoung LEE ,  Jimin KIM ,  Sumin JANG ,  Sangkyun IM ,  Yaeun SEO ,  Eunmi KANG ,  Soobin LIM ,  Kyungsoo MOON

IPC: G03F7/039 ,  G03F7/004

CPC classification number: G03F7/039 ,  G03F7/0045 ,  G03F7/0044

Abstract: A semiconductor photoresist composition and a method of forming patterns utilizing the semiconductor photoresist composition are disclosed. The semiconductor photoresist composition may include a first organometallic compound represented by Chemical Formula 1, a second organometallic compound represented by Chemical Formula 2, and a solvent, where the first organometallic compound is different from the second organometallic compound, at least one selected from among R1 and L1 may include a tertiary carbon, and at least one selected from among R2 and L2 may include at least one selected from among a primary carbon and a secondary carbon.

公开(公告)号：US20250155799A1

公开(公告)日：2025-05-15

申请号：US18917822

申请日：2024-10-16

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Soobin LIM ,  Yaeun SEO ,  Sumin JANG ,  Changsoo WOO ,  Minyoung LEE ,  Taegeun SEONG ,  Eunmi KANG ,  Jimin KIM ,  Seungwoo JANG ,  Seung-Wook SHIN

IPC: G03F7/004 ,  G03F7/00 ,  G03F7/16 ,  H01L21/027

Abstract: A semiconductor photoresist composition including an organometallic compound; and a mixed solvent including an alcohol-based compound and a non-alcohol-based compound in a weight ratio of about 1:99 to about 30:70.

公开(公告)号：US20250044686A1

公开(公告)日：2025-02-06

申请号：US18764931

申请日：2024-07-05

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Yaeun SEO ,  Jimin KIM ,  Minyoung LEE ,  Eunmi KANG ,  Taegeun SEONG ,  Changsoo WOO ,  Sumin JANG ,  Bukeun OH ,  Chungheon LEE

IPC: G03F7/004 ,  G03F7/00 ,  G03F7/039

Abstract: Disclosed is a method of forming patterns including coating a metal-containing resist composition on a substrate; a heat treatment including drying and heating to form a metal-containing resist layer on the substrate; exposing a metal-containing resist layer using a patterned mask; and developing including coating a developer composition to remove unexposed regions to form a resist pattern, wherein the coating the metal-containing resist composition is performed by coating the metal-containing resist composition with a spin coater at a speed of about 100 to about 1,500 rpm for about 60 to about 120 seconds, the heating is performed at a temperature of about 90 to about 200° C. for about 30 to about 120 seconds, the exposing the metal-containing resist layer is performed by irradiating extreme ultraviolet light, light having a wavelength of about 5 nm to about 50 nm, or a combination thereof.