公开(公告)号：US20050136659A1

公开(公告)日：2005-06-23

申请号：US10936853

申请日：2004-09-09

申请人： Jong-ho Yun ,  Gil-heyun Choi ,  Sang-bom Kang ,  Woong-hee Sohn ,  Hyun-su Kim

发明人： Jong-ho Yun ,  Gil-heyun Choi ,  Sang-bom Kang ,  Woong-hee Sohn ,  Hyun-su Kim

IPC分类号： H01L21/24 ,  H01L21/285 ,  H01L21/324 ,  H01L21/336 ,  H01L21/44 ,  H01L21/4763 ,  H01L21/768 ,  H01L29/78

CPC分类号： H01L21/324 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/76889 ,  H01L29/665 ,  H01L29/78

摘要： A method of forming a cobalt disilicide layer and a method of manufacturing a semiconductor device using the same are provided. The method of forming a cobalt disilicide layer includes forming a cobalt layer on at least a silicon surface of a semiconductor device using metal organic chemical vapor deposition by supplying a cobalt precursor having a formula Co2(CO)6(R1—C≡C—R2), where R1 is H or CH3, and R2 is hydrogen, t-butyl, phenyl, methyl, or ethyl, as a source gas. Then, a capping layer is formed on the cobalt layer. A first thermal treatment is then performed on the semiconductor device in an ultra high vacuum, for example, under a pressure of 10−9-10−3 torr, to react silicon with cobalt. Cobalt unreacted during the first thermal treatment and the capping layer are then removed and a second thermal treatment is performed on the semiconductor device to form the cobalt disilicide (CoSi2) layer.

摘要翻译： 提供了形成二硅化钴层的方法以及使用其制造半导体器件的方法。 形成二硅化钴层的方法包括使用金属有机化学气相沉积在半导体器件的至少硅表面上形成钴层，通过提供具有式CO 2（CO）2的钴前体， （R 1-C≡CR2），其中R 1是H或CH 3， / SUB，R 2是作为源气体的氢，叔丁基，苯基，甲基或乙基。 然后，在钴层上形成覆盖层。 然后在超高真空下，例如在10 -9 -10 -3托的压力下，在半导体器件上进行第一热处理，以使硅 与钴。 然后去除在第一热处理期间未反应的钴和覆盖层，并在半导体器件上进行第二热处理以形成二硅化钴（CoSi 2 N 2）层。

公开(公告)号：US20050106859A1

公开(公告)日：2005-05-19

申请号：US10974417

申请日：2004-10-27

申请人： Hyun-su Kim ,  Gil-heyun Choi ,  Jong-ho Yun ,  Sug-woo Jung ,  Eun-ji Jung ,  Sang-bom Kang ,  Woong-hee Sohn

发明人： Hyun-su Kim ,  Gil-heyun Choi ,  Jong-ho Yun ,  Sug-woo Jung ,  Eun-ji Jung ,  Sang-bom Kang ,  Woong-hee Sohn

IPC分类号： H01L21/285 ,  H01L21/44 ,  H01L21/768

CPC分类号： H01L21/76843 ,  H01L21/28518

摘要： A method of forming a silicide film can include forming a first metal film on a silicon substrate and forming a second metal film on the first metal film at a temperature sufficient to react a first portion of the first metal film in contact with the silicon substrate to form a metal-silicide film. The second metal film and a second portion of the first metal film can be removed so that a thin metal-silicide film remains on the silicon substrate. Then, a metal wiring film can be formed on the thin metal-silicide film and the metal wiring film can be etched.

摘要翻译： 形成硅化物膜的方法可以包括在硅衬底上形成第一金属膜并在第一金属膜上形成第二金属膜，该温度足以使与第一金属膜的与硅衬底接触的第一部分反应， 形成金属硅化物膜。 可以去除第二金属膜和第一金属膜的第二部分，使得在硅衬底上残留有薄的金属硅化物膜。 然后，可以在薄金属硅化物膜上形成金属布线膜，并且可以蚀刻金属布线膜。

公开(公告)号：US07312150B2

公开(公告)日：2007-12-25

申请号：US10936853

申请日：2004-09-09

申请人： Jong-ho Yun ,  Gil-heyun Choi ,  Sang-bom Kang ,  Woong-hee Sohn ,  Hyun-su Kim

发明人： Jong-ho Yun ,  Gil-heyun Choi ,  Sang-bom Kang ,  Woong-hee Sohn ,  Hyun-su Kim

IPC分类号： H01L21/44

CPC分类号： H01L21/324 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/76889 ,  H01L29/665 ,  H01L29/78

摘要： A method of forming a cobalt disilicide layer and a method of manufacturing a semiconductor device using the same are provided. The method of forming a cobalt disilicide layer includes forming a cobalt layer on at least a silicon surface of a semiconductor device using metal organic chemical vapor deposition by supplying a cobalt precursor having a formula Co2(CO)6(R1—C≡C—R2), where R1 is H or CH3, and R2 is hydrogen, t-butyl, phenyl, methyl, or ethyl, as a source gas. Then, a capping layer is formed on the cobalt layer. A first thermal treatment is then performed on the semiconductor device in an ultra high vacuum, for example, under a pressure of 10−9-10−3 torr, to react silicon with cobalt. Cobalt unreacted during the first thermal treatment and the capping layer are then removed and a second thermal treatment is performed on the semiconductor device to form the cobalt disilicide (CoSi2) layer.

摘要翻译： 提供了形成二硅化钴层的方法以及使用其制造半导体器件的方法。 形成二硅化钴层的方法包括使用金属有机化学气相沉积在半导体器件的至少硅表面上形成钴层，通过提供具有式CO 2（CO）2的钴前体， （R 1-C≡CR2），其中R 1是H或CH 3， / SUB，R 2是作为源气体的氢，叔丁基，苯基，甲基或乙基。 然后，在钴层上形成覆盖层。 然后在超高真空下，例如在10 -9 -10 -3托的压力下，在半导体器件上进行第一热处理，以使硅 与钴。 然后去除在第一热处理期间未反应的钴和覆盖层，并在半导体器件上进行第二热处理以形成二硅化钴（CoSi 2 N 2）层。

公开(公告)号：US20060205186A1

公开(公告)日：2006-09-14

申请号：US11359404

申请日：2006-02-23

申请人： Hong-bae Park ,  Yu-gyun Shin ,  Sang-bom Kang

发明人： Hong-bae Park ,  Yu-gyun Shin ,  Sang-bom Kang

IPC分类号： H01L21/20

CPC分类号： H01L21/0228 ,  C23C16/308 ,  C23C16/45531 ,  H01L21/02142 ,  H01L21/02194 ,  H01L21/02274 ,  H01L21/3141 ,  H01L21/3145 ,  H01L21/31645

摘要： A method of forming a high dielectric film for a semiconductor device comprises supplying a first source gas to a reaction chamber during a first time interval, supplying a first reactant gas to the reaction chamber during a second time interval after the first time interval, supplying a second source gas to the reaction chamber for a third time interval after the second time interval, supplying a second reactant gas to the reaction chamber for a fourth time interval after the third time interval, and supplying an additive gas including nitrogen to the reaction chamber during a fifth time interval.

公开(公告)号：US06590251B2

公开(公告)日：2003-07-08

申请号：US09911313

申请日：2001-07-23

申请人： Sang-bom Kang ,  Hyun-seok Lim ,  Yung-sook Chae ,  In-sang Jeon ,  Gil-heyun Choi

发明人： Sang-bom Kang ,  Hyun-seok Lim ,  Yung-sook Chae ,  In-sang Jeon ,  Gil-heyun Choi

IPC分类号： H01L27108

CPC分类号： C23C16/34 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/7687 ,  H01L28/75

摘要： Semiconductor films include insulating films including contact holes in semiconductor substrates, capacitors comprising lower electrodes formed on conductive material films in the contact holes, high dielectric films formed on the lower electrodes and upper electrodes formed on the high dielectric films, and barrier metal layers positioned between conductive materials in the contact holes and the lower electrodes, the barrier metal layers including metal layers formed in A-B-N structures in which a plurality of atomic layers are stacked by alternatively depositing reactive metal (A), an amorphous combination element (B) for preventing crystallization of the reactive metal (A) and nitrogen (N). The composition ratios of the barrier metal layers are determined by the number of depositions of the atomic layers.

摘要翻译： 半导体膜包括在半导体衬底中包括接触孔的绝缘膜，包括形成在接触孔中的导电材料膜上的下电极的电容器，形成在下电极上的高电介质膜和形成在高电介质膜上的上电极，以及位于 接触孔和下电极中的导电材料，阻挡金属层包括通过交替沉积反应性金属（A）而堆叠多个原子层的ABN结构中形成的金属层，用于防止结晶的非晶态组合元件（B） 的反应性金属（A）和氮（N）。 阻挡金属层的组成比由原子层的沉积数确定。

公开(公告)号：US07521331B2

公开(公告)日：2009-04-21

申请号：US11359404

申请日：2006-02-23

申请人： Hong-bae Park ,  Yu-gyun Shin ,  Sang-bom Kang

发明人： Hong-bae Park ,  Yu-gyun Shin ,  Sang-bom Kang

IPC分类号： H01L21/76

CPC分类号： H01L21/0228 ,  C23C16/308 ,  C23C16/45531 ,  H01L21/02142 ,  H01L21/02194 ,  H01L21/02274 ,  H01L21/3141 ,  H01L21/3145 ,  H01L21/31645

摘要： A method of forming a high dielectric film for a semiconductor device comprises supplying a first source gas to a reaction chamber during a first time interval, supplying a first reactant gas to the reaction chamber during a second time interval after the first time interval, supplying a second source gas to the reaction chamber for a third time interval after the second time interval, supplying a second reactant gas to the reaction chamber for a fourth time interval after the third time interval, and supplying an additive gas including nitrogen to the reaction chamber during a fifth time interval.

摘要翻译： 形成用于半导体器件的高电介质膜的方法包括：在第一时间间隔内将第一源气体供应到反应室，在第一时间间隔之后的第二时间间隔期间将第一反应气体供应到反应室， 在所述第二时间间隔之后的第三时间间隔内将第二源气体供应到所述反应室，在所述第三时间间隔之后，将第二反应气体供应到所述反应室中第四时间间隔，并且在所述第三时间间隔内向所述反应室供应包含氮气的添加剂气体 第五个时间间隔。

公开(公告)号：US06399491B2

公开(公告)日：2002-06-04

申请号：US09826946

申请日：2001-04-06

申请人： In-sang Jeon ,  Sang-bom Kang ,  Hyun-seok Lim ,  Gil-heyun Choi

发明人： In-sang Jeon ,  Sang-bom Kang ,  Hyun-seok Lim ,  Gil-heyun Choi

IPC分类号： H01L2144

CPC分类号： C23C16/45531 ,  C23C16/45527 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/7685

摘要： A method of manufacturing a barrier metal layer uses atomic layer deposition (ALD) as the mechanism for depositing the barrier metal. The method includes supplying a first source gas onto the entire surface of a semiconductor substrate in the form of a pulse, and supplying a second source gas, which reacts with the first source gas, onto the entire surface of the semiconductor substrate in the form of a pulse. In a first embodiment, the pulses overlap in time so that the second source gas reacts with part of the first source gas physically adsorbed at the surface of the semiconductor substrate to thereby form part of the barrier metal layer by chemical vapor deposition whereas another part of the second source gas reacts with the first source gas chemically adsorbed at the surface of the semiconductor substrate to thereby form part of the barrier metal layer by atomic layer deposition. Thus, the deposition rate is greater than if the barrier metal layer were only formed by ALD. In the second embodiment, an impurity-removing gas is used to remove impurities in the barrier metal layer. Thus, even if the gas supply scheme is set up to only use ALD in creating the barrier metal layer, the deposition rate can be increased without the usual accompanying increase in the impurity content of the barrier metal layer.

摘要翻译： 制造阻挡金属层的方法使用原子层沉积（ALD）作为沉积阻挡金属的机理。 该方法包括以脉冲的形式将第一源气体提供到半导体衬底的整个表面上，并将与第一源气体反应的第二源气体以 一脉 在第一实施例中，脉冲在时间上重叠，使得第二源气体与物理吸附在半导体衬底的表面处的第一源气体的一部分反应，从而通过化学气相沉积形成阻挡金属层的一部分，而另一部分 第二源气体与化学吸附在半导体衬底的表面上的第一源气体反应，从而通过原子层沉积形成阻挡金属层的一部分。 因此，如果阻挡金属层仅由ALD形成，则沉积速率更大。 在第二实施例中，使用杂质去除气体来除去阻挡金属层中的杂质。 因此，即使将气体供给方案设定为仅使用ALD来制造阻挡金属层，也可以提高成膜速度，而​​不会妨碍阻挡金属层的杂质含量的增加。

公开(公告)号：US06287965B1

公开(公告)日：2001-09-11

申请号：US09511598

申请日：2000-02-23

申请人： Sang-bom Kang ,  Hyun-seok Lim ,  Yung-sook Chae ,  In-sang Jeon ,  Gil-heyun Choi

发明人： Sang-bom Kang ,  Hyun-seok Lim ,  Yung-sook Chae ,  In-sang Jeon ,  Gil-heyun Choi

IPC分类号： H01L2144

CPC分类号： H01L21/7687 ,  C23C16/34 ,  C23C16/45529 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76865 ,  H01L28/75

摘要： A method of forming a metal layer having excellent thermal and oxidation resistant characteristics using atomic layer deposition is provided. The metal layer includes a reactive metal (A), an element (B) for the amorphous combination between the reactive metal (A) and nitrogen (N), and nitrogen (N). The reactive metal (A) may be titanium (Ti), tantalum (Ta), tungsten (W), zirconium (Zr), hafnium (Hf), molybdenum (Mo) or niobium (Nb). The amorphous combination element (B) may be aluminum (Al), silicon (Si) or boron (B). The metal layer is formed by alternately injecting pulsed source gases for the elements (A, B and N) into a chamber according to atomic layer deposition to thereby alternately stack atomic layers. Accordingly, the composition ratio of a nitrogen compound (A—B—N) of the metal layer can be desirably adjusted just by appropriately determining the number of injection pulses of each source gas. According to the composition ratio, a desirable electrical conductivity and resistance of the metal layer can be accurately obtained. The atomic layers are individually deposited, thereby realizing excellent step coverage even in a complex and compact region. A metal layer formed by atomic layer deposition can be employed as a barrier metal layer, a lower electrode or an upper electrode in a semiconductor device.

摘要翻译： 提供了使用原子层沉积形成具有优异的耐热和抗氧化特性的金属层的方法。 金属层包括反应性金属（A），用于反应性金属（A）和氮（N）之间的无定形组合的元素（B）和氮（N））。 反应性金属（A）可以是钛（Ti），钽（Ta），钨（W），锆（Zr），铪（Hf），钼（Mo）或铌（Nb）。 无定形组合元件（B）可以是铝（Al），硅（Si）或硼（B）。 通过根据原子层沉积将元件（A，B和N）的脉冲源气体交替地注入到室中来形成金属层，从而交替堆叠原子层。 因此，通过适当确定各源气体的喷射脉冲数，可以适当地调整金属层的氮化合物（A-B-N）的组成比。 根据组成比，可以准确地获得金属层所需的导电性和电阻。 原子层分别沉积，即使在复杂和紧凑的区域中也能实现优异的阶梯覆盖。 通过原子层沉积形成的金属层可以用作半导体器件中的阻挡金属层，下电极或上电极。