摘要:
A method for forming resist patterns comprising coating a resist comprising a polymeric or copolymeric compound having a repeating unit comprising a protected alkali-soluble group in which the protecting group is cleaved with an acid so that the compound is made alkali-soluble, and an acid generator capable of generating an acid upon the radiation exposure to a substrate to be fabricated, then pre-baking the formed resist film, successively selectively exposing the resist film, thereafter, developing a latent image with a developer containing an aqueous or alcoholic solution of a specified ammonium compound or morpholine compound. According to this method, crack formation and peeling of a pattern can be suppressed at the time of forming resist patterns.
摘要:
Alkali-developable, chemically amplified resist composition which comprises an alkali-insoluble, film-forming compound having a structural unit containing a protected alkali-soluble group in which unit a protective moiety of said protected alkali-soluble group is cleaved upon action of an acid generated from a photoacid generator used in combination with said compound, thereby releasing a protective moiety from the alkali-soluble group and converting said compound to an alkali-soluble one, and a photoacid generator capable of being decomposed upon exposure to a patterning radiation to thereby produce an acid capable of causing cleavage of said protective moiety. The resist composition is particularly suitable for excimer laser lithography using an alkaline developer, and the formed resist patterns can exhibit a high sensitivity and excellent dry etch resistance without swelling.
摘要:
Method for the formation of resist patterns by using a chemically amplified resist which comprises an alkali-insoluble base polymer or copolymer and an acid generator, in which the patternwise exposed film of said resist is developed with an organic alkaline developer in the presence of a surface active agent containing a higher alkyl group in a molecule thereof. The resist patterns have no drawback such as cracks and peeling, and thus can be advantageously used in the production of semiconductor devices such as LSIs and VLSIs.
摘要:
Alkali-developable, chemically amplified resist composition which comprises an alkali-insoluble compound having a structural unit containing a protected alkali-soluble group in which unit a protective moiety of said protected alkali-soluble group contains an alicyclic hydrocarbon group having bonded to a carbon atom thereof a —CH2—R1′ group wherein R1′ is methyl, ethyl, propyl or isopropyl, and said alkali-soluble group is cleaved upon action of an acid generated from a photoacid generator used in combination with said compound, thereby releasing said protective moiety from the alkali-soluble group and converting said compound to an alkali-soluble one, and a photoacid generator capable of being decomposed upon exposure to a patterning radiation to thereby produce an acid capable of causing cleavage of said protective moiety. The resist composition can exhibit a high sensitivity (not more than 5 mJ/cm2) and therefore is particularly suitable for ArF lithography and also can exhibit stable patterning properties.
摘要:
Alkali-developable, chemically amplified resist composition which comprises an alkali-insoluble compound having a structural unit containing a protected alkali-soluble group in which unit a protective moiety of said protected alkali-soluble group contains an alicyclic hydrocarbon group having bonded to a carbon atom thereof a —CH2—R1′ group wherein R1′ is methyl, ethyl, propyl or isopropyl, and said alkali-soluble group is cleaved upon action of an acid generated from a photoacid generator used in combination with said compound, thereby releasing said protective moiety from the alkali-soluble group and converting said compound to an alkali-soluble one, and a photoacid generator capable of being decomposed upon exposure to a patterning radiation to thereby produce an acid capable of causing cleavage of said protective moiety. The resist composition can exhibit a high sensitivity (not more than 5 mJ/cm2) and therefore is particularly suitable for ArF lithography and also can exhibit stable patterning properties.
摘要翻译:碱可显影的化学增幅抗蚀剂组合物,其包含具有包含受保护的碱溶性基团的结构单元的碱不溶性化合物,其中所述被保护的碱溶性基团的保护部分含有与碳原子键合的脂环族烃基 其中R 1'是甲基,乙基,丙基或异丙基,并且所述碱溶性基团在与所述化合物组合使用的光致酸产生剂产生的酸作用下被切割,由此释放所述保护部分 从碱溶性基团中转化为碱溶性化合物,以及光致酸发生剂,其能够在暴露于图案化辐射时分解,从而产生能够导致所述保护部分裂解的酸。 抗蚀剂组合物可以表现出高灵敏度(不大于5mJ / cm 2),因此特别适用于ArF光刻,并且还可呈现稳定的图案化性能。
摘要:
A high energy radiation-sensitive, pattern-forming resist composition comprising a polymer of the formula (I): ##STR1## in which R.sub.1 represents an alkyl groups, cyano group, --CH.sub.2 OH or --CH.sub.2 CO.sub.2 R wherein R represents an alkyl group, R.sub.2 represents a hydrocarbon group containing at least one silicon atom, R.sub.3 represents a group capable of causing crosslinking of the polymer upon application of heat, and m and n each is an integer. The resist composition is particularly useful as a top layer resist of the bi-level resist system, and the exposed top layer resist can be stably developed because of a remarkably increased difference of the solubility in the developer of the exposed and unexposed areas thereof.
摘要:
There are provided steps of forming a lower resist layer on a patterning objective layer, forming an organic intermediate layer made of organic material, that contains no Si—O bond in its structure, on the lower resist layer, forming an upper resist layer made of alicyclic resin on the organic intermediate layer, forming a pattern by exposing/developing the upper resist layer, transferring the pattern of the upper resist layer onto the organic intermediate layer by etching the organic intermediate layer while using the upper resist layer as a mask, transferring a pattern of the organic intermediate layer onto the lower resist layer by etching the lower resist layer while using the organic intermediate layer as a mask, and etching the patterning objective layer while using the lower resist layer as a mask. Accordingly, a semiconductor device manufacturing method containing patterning steps employing a multi-layered resist structure, that is capable of suppressing deformation of the pattern of the upper resist layer formed of alicyclic compound, can be provided.
摘要:
Chemically amplified resist material which comprises: I. an acid-sensitive terpolymer produced upon copolymerization of (i) a first monomer unit having a structure which contains an alkali-soluble group protected with an alicyclic hydrocarbon-containing protective group, (ii) a second monomer unit having a lactone structure, and (iii) a third monomer unit having a structure which contains an alkali-soluble group protected with a protective group different from that of said first monomer unit; and II. a photoacid generator capable of producing an acid upon exposure to a patterning radiation, and the process for forming resist patterns using this resist material.
摘要:
Electrically conductive layer-providing compositions comprising a conducting or semiconducting polymer and/or a non-conducting precursor thereof and a photo-acid generator having a sensitivity to an ultraviolet radiation having a wavelength of 300 nm or less. The electrically conductive layer, when an electron beam resist layer adjacent thereto is exposed to a pattern of the electron beam, can effectively prevent an accumulation of an electrical charge on the resist layer and accordingly a misalignment of the resist pattern. In addition, the compositions and electrically conductive layer resulting therefrom can be stably stored if not exposed to ultraviolet radiation. Pattern formation processes using the electrically conductive layer-providing compositions are also provided.
摘要:
Process for the quantitative preparation of esters, with a high yield, which comprises reacting an aldehyde or ketone compound and an acid halide compound in a one pot reaction in the presence of at least one compound represented by the following formulae: RMgX (I); RMgX/CuX (II); and RLi or R(CuLi)½ (III); in which R represents a hydrocarbon group, and X represents a halogen atom. Production processes of a resist material and a semiconductor device are also disclosed.