公开(公告)号：US08962164B2

公开(公告)日：2015-02-24

申请号：US13960609

申请日：2013-08-06

Applicant: Seagate Technology LLC

Inventor： Shaoping Li ,  Kaizhong Gao ,  Lei Wang ,  Wenzhong Zhu ,  Xiaobin Wang

IPC: G11B5/66 ,  B82Y10/00 ,  G11B5/64 ,  G11B5/74 ,  G11B5/82 ,  G11B5/65 ,  G11B5/00

CPC classification number: G11B5/667 ,  B82Y10/00 ,  G11B5/64 ,  G11B5/65 ,  G11B5/656 ,  G11B5/66 ,  G11B5/743 ,  G11B5/746 ,  G11B5/82 ,  G11B2005/0029 ,  H01F41/0206 ,  Y10S428/90 ,  Y10T29/4902 ,  Y10T29/49032 ,  Y10T29/49067 ,  Y10T428/12458 ,  Y10T428/12465 ,  Y10T428/12931 ,  Y10T428/26 ,  Y10T428/265

Abstract: A perpendicular magnetic recording medium adapted for high recording density and high data recording rate comprises a non-magnetic substrate having at least one surface with a layer stack formed thereon, the layer stack including a perpendicular recording layer containing a plurality of columnar-shaped magnetic grains extending perpendicularly to the substrate surface for a length, with a first end distal the surface and a second end proximal the surface, wherein each of the magnetic grains has: (1) a gradient of perpendicular magnetic anisotropy field Hk extending along its length between the first end and second ends; and (2) predetermined local exchange coupling strengths along the length.

Abstract translation: 适用于高记录密度和高数据记录速率的垂直磁记录介质包括具有至少一个具有在其上形成层叠层的表面的非磁性基板，该层堆叠包括垂直记录层，该垂直记录层包含多个柱状磁性颗粒 垂直于衬底表面延伸一段长度，第一端远离表面，接近表面的第二端，其中每个磁性颗粒具有：（1）垂直磁各向异性场Hk沿其长度延伸的梯度 第一端和第二端; 和（2）沿着长度的预定局部交换耦合强度。

公开(公告)号：US08929016B2

公开(公告)日：2015-01-06

申请号：US13831206

申请日：2013-03-14

Applicant: Seagate Technology LLC

Inventor： Kaizhong Gao ,  Raul Horacio Andruet ,  Xiaobin Wang

IPC: G11B5/02 ,  G11B13/08 ,  G11B5/31 ,  G11B5/60 ,  G11B5/00

CPC classification number: G11B13/08 ,  G11B5/3133 ,  G11B5/314 ,  G11B5/607 ,  G11B2005/0021

Abstract: A magnetic recording head includes a magnetic writer comprising a main write pole and a return write pole. The magnetic recording head includes a write heater assembly comprising at least one first heater subassembly and at least one second heater subassembly. At least part of the magnetic write head is disposed between the first heater subassembly and the second heater subassembly. When the first heater subassembly, the second heater subassembly, and the magnetic writer are energized, a variation in the thermal protrusion of the head media interface of the magnetic recording head may be less than about 20 nm along the down track and/or cross track directions.

Abstract translation: 磁记录头包括一个包括一个主写极和一个返回写极的磁写入器。 磁记录头包括写入加热器组件，其包括至少一个第一加热器子组件和至少一个第二加热器子组件。 磁写头的至少一部分设置在第一加热器子组件和第二加热器子组件之间。 当第一加热器子组件，第二加热器子组件和磁写入器通电时，磁记录头的磁头介质接口的热突起的变化可以沿下轨和/或交叉轨道小于约20nm 方向。

公开(公告)号：US09087593B2

公开(公告)日：2015-07-21

申请号：US13947810

申请日：2013-07-22

Applicant: Seagate Technology LLC

Inventor： Xiaobin Wang ,  Wenzhong Zhu ,  Henry Huang ,  Yiran Chen ,  Haiwen Xi

IPC: G06F7/58 ,  G11C11/16 ,  G01R33/09

CPC classification number: G11C11/1675 ,  G01R33/098 ,  G06F7/588 ,  G11C11/161 ,  G11C11/1697

Abstract: Devices and methods for generating a random number that utilizes a magnetic tunnel junction are disclosed. An AC current source can be in electrical connection to a magnetic tunnel junction to provide an AC current to the magnetic tunnel junction. A read circuit can be used to determine a bit based on a state of the magnetic tunnel junction. A rate of production of the bits can be adjusted, such as by adjusting a frequency or amplitude of the AC current. A probability of obtaining a “0” or “1” bit can be managed, such as by an addition of DC biasing to the AC current.

Abstract translation: 公开了用于产生利用磁性隧道结的随机数的装置和方法。 AC电流源可以与磁性隧道结电连接，以向磁性隧道结提供AC电流。 读取电路可以用于基于磁性隧道结的状态来确定位。 可以通过调整AC电流的频率或振幅来调整位的产生速率。 可以例如通过向AC电流添加DC偏置来管理获得“0”或“1”位的概率。

公开(公告)号：US20130329490A1

公开(公告)日：2013-12-12

申请号：US13964402

申请日：2013-08-12

Applicant: Seagate Technology LLC

Inventor： Insik Jin ,  Xiaobin Wang ,  Yong Lu ,  Haiwen Xi

IPC: G11C11/16

CPC classification number: G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3286 ,  H01L43/08

Abstract: A method of switching the magnetization orientation of a ferromagnetic free layer of an out-of-plane magnetic tunnel junction cell, the method including: passing an AC switching current through the out-of-plane magnetic tunnel junction cell, wherein the AC switching current switches the magnetization orientation of the ferromagnetic free layer.

Abstract translation: 一种切换面外磁性隧道结电池的铁磁自由层的磁化取向的方法，该方法包括：使交流开关电流通过面外磁性隧道结电池，其中交流开关电流 切换铁磁自由层的磁化方向。

公开(公告)号：US20130292784A1

公开(公告)日：2013-11-07

申请号：US13934998

申请日：2013-07-03

Applicant: Seagate Technology LLC

Inventor： Haiwen Xi ,  Yuankai Zheng ,  Xiaobin Wang ,  Dimitar V. Dimitrov ,  Pat J. Ryan

IPC: H01L43/02

CPC classification number: H01L43/02 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/228

Abstract: An apparatus and method for enhancing data writing and retention to a magnetic memory element, such as in a non-volatile data storage array. In accordance with various embodiments, a programmable memory element has a reference layer and a storage layer. The reference layer is provided with a fixed magnetic orientation. The storage layer is programmed to have a first region with a magnetic orientation antiparallel to said fixed magnetic orientation, and a second region with a magnetic orientation parallel to said fixed magnetic orientation. A thermal assist layer may be incorporated into the memory element to enhance localized heating of the storage layer to aid in the transition of the first region from parallel to antiparallel magnetic orientation during a write operation.

Abstract translation: 一种用于增强对诸如非易失性数据存储阵列中的磁存储元件的数据写入和保持的装置和方法。 根据各种实施例，可编程存储元件具有参考层和存储层。 参考层具有固定的磁性取向。 存储层被编程为具有与所述固定磁性取向反平行的磁性取向的第一区域和具有与所述固定磁性取向平行的磁性取向的第二区域。 可以将热辅助层结合到存储元件中以增强存储层的局部加热，以帮助在写入操作期间第一区域从平行转变为反平行磁取向。