公开(公告)号：US11423844B2

公开(公告)日：2022-08-23

申请号：US17055285

申请日：2019-05-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takayuki Ikeda ,  Hidetomo Kobayashi ,  Hideaki Shishido ,  Kiyotaka Kimura ,  Takashi Nakagawa ,  Kosei Nei

IPC: G09G3/3266 ,  G09G3/3275 ,  G09G3/3233 ,  G09G5/377 ,  H01L27/32 ,  H01L29/786 ,  G09G3/36

Abstract: A high-definition display device is provided. A small display device is provided. In the display device, a first layer and a second layer are stacked and provided. The first layer includes a gate driver circuit and a source driver circuit, and the second layer includes a display portion. The gate driver circuit and the source driver circuit are provided to include a region overlapping with the display portion. The gate driver circuit and the source driver circuit have an overlap region where they are not strictly separated from each other. Five or more gate driver circuits and five or more source driver circuits can be provided.

公开(公告)号：US10971528B2

公开(公告)日：2021-04-06

申请号：US16816423

申请日：2020-03-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hajime Kimura ,  Tsutomu Murakawa ,  Kosei Nei ,  Hiroaki Honda ,  Yusuke Shino

IPC: H01L27/12 ,  H01L29/786 ,  H01L21/84 ,  H01L27/06 ,  H01L21/8258 ,  G11C11/405 ,  G11C11/404

Abstract: A semiconductor device which can suppress leakage current between a wiring and a connection electrode connected to a floating node is provided. The semiconductor device includes a first insulator, a first conductor over the first insulator, a second conductor over the first insulator, and a second insulator over the first insulator, the first conductor, and the second conductor. The first conductor and the second conductor contain a metal A (one kind or a plurality of kinds of aluminum, copper, tungsten, chromium, silver, gold, platinum, tantalum, nickel, molybdenum, magnesium, beryllium, indium, and ruthenium). The metal A is detected in an interface between the first insulator and the second insulator by an energy dispersive X-ray spectroscopy (EDX). The second insulator includes a groove for exposing the first insulator between the first conductor and the second conductor.

公开(公告)号：US10186604B2

公开(公告)日：2019-01-22

申请号：US15722055

申请日：2017-10-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshinori Ando ,  Hidekazu Miyairi ,  Naoto Yamade ,  Asako Higa ,  Miki Suzuki ,  Yoshinori Ieda ,  Yasutaka Suzuki ,  Kosei Nei ,  Shunpei Yamazaki

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L21/469 ,  C23C14/08 ,  C23C14/35 ,  H01L21/822 ,  H01L27/06 ,  H01L21/4757 ,  H01L21/477 ,  H01L27/088

Abstract: To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.

公开(公告)号：US20150108475A1

公开(公告)日：2015-04-23

申请号：US14520196

申请日：2014-10-21

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yoshinori Ando ,  Hidekazu Miyairi ,  Naoto Yamade ,  Asako Higa ,  Miki Suzuki ,  Yoshinori Ieda ,  Yasutaka Suzuki ,  Kosei Nei ,  Shunpei Yamazaki

IPC: H01L27/12 ,  H01L21/02 ,  H01L21/477 ,  H01L29/786

CPC classification number: H01L29/66969 ,  C23C14/086 ,  C23C14/351 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02318 ,  H01L21/469 ,  H01L21/4757 ,  H01L21/477 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/1259 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78693

Abstract: To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.

Abstract translation: 为了改善包括氧化物半导体的半导体器件的电特性，并且提供具有小的电特性变化的高度可靠的半导体器件。 半导体器件包括第一绝缘膜，第一绝缘膜上的第一阻挡膜，第一阻挡膜上的第二绝缘膜，以及包括第二绝缘膜上的第一氧化物半导体膜的第一晶体管。 在通过热解吸光谱法测量的高于或等于400℃的给定温度下，从第一绝缘膜释放的氢分子的量小于或等于在300℃下释放的氢分子的量的130％ 第二绝缘膜包括在化学计量组成中含有比氧更高比例的氧的区域。