公开(公告)号：US10910407B2

公开(公告)日：2021-02-02

申请号：US16478244

申请日：2018-01-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshinori Ando ,  Takashi Hamada ,  Yasumasa Yamane

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786

Abstract: A high-performance semiconductor device is provided. The semiconductor device includes a transistor, an insulating film over the transistor, an electrode, and a metal oxide over the insulating film. The transistor includes a first gate electrode, a first gate insulating film over the first gate electrode, an oxide over the first gate insulating film, a source electrode and a drain electrode electrically connected to the oxide, a second gate insulating film over the oxide, and a second gate electrode over the second gate insulating film. The electrode includes a region in contact with the insulating film. The first gate insulating film is in contact with the insulating film. The thicknesses of the insulating film over the second gate electrode, the insulating film over the source electrode, and the insulating film over the drain electrode are substantially the same, and the insulating film includes excess oxygen.

公开(公告)号：US12283632B2

公开(公告)日：2025-04-22

申请号：US17608189

申请日：2020-04-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Tsutomu Murakawa ,  Yoshinori Ando ,  Tetsuya Kakehata ,  Yuichi Sato ,  Ryota Hodo

IPC: H01L29/786 ,  H01L29/66 ,  H10B12/00

Abstract: A semiconductor device with less variations in transistor characteristics is provided. The semiconductor device includes: a first insulator; a first oxide over the first insulator; a first conductor and a second conductor over the first oxide; a first layer and a second layer which are in contact with a side surface of the first oxide; a second insulator over the first insulator, the first layer, the second layer, the first conductor, and the second conductor; a third insulator over the second insulator; a second oxide between the first conductor and the second conductor and over the first oxide; a fourth insulator over the second oxide; and a third conductor over the fourth insulator. Each of the first layer and the second layer includes a metal contained in the first conductor and the second conductor. The first insulator in a region in contact with the second insulator includes a region where a concentration of the metal is lower than that of the first layer or the second layer.

公开(公告)号：US10096720B2

公开(公告)日：2018-10-09

申请号：US15464517

申请日：2017-03-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshinori Ando

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66

Abstract: To provide a semiconductor device with high design flexibility. A first transistor and a second transistor having different electrical characteristics from those of the first transistor are provided over the same layer without significantly increasing the number of manufacturing steps. A semiconductor layer where a channel of the first transistor is formed and a semiconductor layer where a channel of the second transistor is formed are formed using semiconductor materials having different electron affinities. When an oxide semiconductor is used for the semiconductor layer, an insulating layer containing excess oxygen is used as an insulating layer below the semiconductor layer. By increasing the thickness of the insulating layer, a large amount of oxygen can be supplied to the semiconductor layer.

公开(公告)号：US09627418B2

公开(公告)日：2017-04-18

申请号：US14579249

申请日：2014-12-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yoshinori Ando

IPC: H01L29/10 ,  H01L29/12 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/1259 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: Disclosed is a semiconductor device having a first transistor and a second transistor over the first transistor. The first transistor includes a first semiconductor, and the second transistor includes an oxide semiconductor that is different from the first semiconductor. A gate of the first transistor is electrically connected to a source or drain electrode of the second transistor. The second transistor has a semiconductor layer including the oxide semiconductor over the source and drain electrodes and a gate electrode over the semiconductor layer with an insulating layer therebetween.

公开(公告)号：US10002886B2

公开(公告)日：2018-06-19

申请号：US15485371

申请日：2017-04-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yoshinori Ando

IPC: H01L29/10 ,  H01L29/12 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L27/1225 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/1259 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: Disclosed is a semiconductor device having a first transistor and a second transistor over the first transistor. The first transistor includes a first semiconductor, and the second transistor includes an oxide semiconductor that is different from the first semiconductor. A gate of the first transistor is electrically connected to a source or drain electrode of the second transistor. The second transistor has a semiconductor layer including the oxide semiconductor over the source and drain electrodes and a gate electrode over the semiconductor layer with an insulating layer therebetween.

公开(公告)号：US09780201B2

公开(公告)日：2017-10-03

申请号：US15223002

申请日：2016-07-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshinori Ando ,  Hidekazu Miyairi ,  Naoto Yamade ,  Asako Higa ,  Miki Suzuki ,  Yoshinori Ieda ,  Yasutaka Suzuki ,  Kosei Nei ,  Shunpei Yamazaki

IPC: H01L21/02 ,  H01L21/477 ,  H01L29/66 ,  C23C14/08 ,  C23C14/35 ,  H01L21/469 ,  H01L21/4757 ,  H01L21/822 ,  H01L27/06 ,  H01L27/088 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L29/66969 ,  C23C14/086 ,  C23C14/351 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02318 ,  H01L21/469 ,  H01L21/4757 ,  H01L21/477 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/1259 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78693

Abstract: To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.

公开(公告)号：US09431435B2

公开(公告)日：2016-08-30

申请号：US14520196

申请日：2014-10-21

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yoshinori Ando ,  Hidekazu Miyairi ,  Naoto Yamade ,  Asako Higa ,  Miki Suzuki ,  Yoshinori Ieda ,  Yasutaka Suzuki ,  Kosei Nei ,  Shunpei Yamazaki

IPC: H01L27/12 ,  H01L29/786 ,  H01L21/02 ,  H01L21/469 ,  C23C14/08 ,  C23C14/35 ,  H01L29/66 ,  H01L21/822 ,  H01L27/06

CPC classification number: H01L29/66969 ,  C23C14/086 ,  C23C14/351 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02318 ,  H01L21/469 ,  H01L21/4757 ,  H01L21/477 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/1259 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78693

Abstract: To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.

Abstract translation: 为了改善包括氧化物半导体的半导体器件的电特性，并且提供具有小的电特性变化的高度可靠的半导体器件。 半导体器件包括第一绝缘膜，第一绝缘膜上的第一阻挡膜，第一阻挡膜上的第二绝缘膜，以及包括第二绝缘膜上的第一氧化物半导体膜的第一晶体管。 在通过热解吸光谱法测量的高于或等于400℃的给定温度下，从第一绝缘膜释放的氢分子的量小于或等于在300℃下释放的氢分子的量的130％ 第二绝缘膜包括在化学计量组成中含有比氧更高比例的氧的区域。

公开(公告)号：US20150187824A1

公开(公告)日：2015-07-02

申请号：US14579249

申请日：2014-12-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yoshinori Ando

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/1259 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: Disclosed is a semiconductor device having a first transistor and a second transistor over the first transistor. The first transistor includes a first semiconductor, and the second transistor includes an oxide semiconductor that is different from the first semiconductor. A gate of the first transistor is electrically connected to a source or drain electrode of the second transistor. The second transistor has a semiconductor layer including the oxide semiconductor over the source and drain electrodes and a gate electrode over the semiconductor layer with an insulating layer therebetween.

Abstract translation: 公开了一种在第一晶体管上具有第一晶体管和第二晶体管的半导体器件。 第一晶体管包括第一半导体，第二晶体管包括不同于第一半导体的氧化物半导体。 第一晶体管的栅极电连接到第二晶体管的源极或漏极。 第二晶体管具有包括源电极和漏电极上的氧化物半导体的半导体层和位于半导体层之间的绝缘层的栅电极。

公开(公告)号：US10475818B2

公开(公告)日：2019-11-12

申请号：US15494850

申请日：2017-04-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshinori Ando ,  Shinpei Matsuda ,  Yuki Hata

IPC: H01L27/12 ,  H01L29/786 ,  H01L27/105 ,  H01L29/423

Abstract: A semiconductor device capable of retaining data for a long time is provided. A first transistor and a second transistor having different electrical characteristics from those of the first transistor are provided over the same layer without an increase in the number of manufacturing steps.

公开(公告)号：US10186604B2

公开(公告)日：2019-01-22

申请号：US15722055

申请日：2017-10-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshinori Ando ,  Hidekazu Miyairi ,  Naoto Yamade ,  Asako Higa ,  Miki Suzuki ,  Yoshinori Ieda ,  Yasutaka Suzuki ,  Kosei Nei ,  Shunpei Yamazaki

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L21/469 ,  C23C14/08 ,  C23C14/35 ,  H01L21/822 ,  H01L27/06 ,  H01L21/4757 ,  H01L21/477 ,  H01L27/088

Abstract: To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.