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    SEMICONDUCTOR DEVICE
    11.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20150140734A1

    公开(公告)日：2015-05-21

    申请号：US14585918

    申请日：2014-12-30

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Takayuki CHO ,  Shunsuke KOSHIOKA ,  Masatoshi YOKOYAMA ,  Shunpei YAMAZAKI

    IPC: H01L29/786 ,  H01L29/66

    CPC classification number: H01L29/78693 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

    Abstract: To provide a highly reliable semiconductor device which includes a transistor including an oxide semiconductor, in a semiconductor device including a staggered transistor having a bottom-gate structure provided over a glass substrate, a gate insulating film in which a first gate insulating film and a second gate insulating film, whose compositions are different from each other, are stacked in this order is provided over a gate electrode layer. Alternatively, in a staggered transistor having a bottom-gate structure, a protective insulating film is provided between a glass substrate and a gate electrode layer. A metal element contained in the glass substrate has a concentration lower than or equal to 5×1018 atoms/cm3 at the interface between the first gate insulating film and the second gate insulating film or the interface between the gate electrode layer and a gate insulating film.

    Abstract translation: 为了提供一种高可靠性的半导体器件，其包括具有氧化物半导体的晶体管，在包括设置在玻璃基板上的具有底栅结构的交错晶体管的半导体器件中，栅极绝缘膜，其中第一栅极绝缘膜和第二栅极绝缘膜 其栅极绝缘膜的组成彼此不同，按栅极电极层设置。 或者，在具有底栅结构的交错晶体管中，在玻璃基板和栅电极层之间设置保护绝缘膜。 包含在玻璃基板中的金属元素在第一栅极绝缘膜和第二栅极绝缘膜之间的界面处或者栅极电极层和栅极绝缘膜之间的界面处具有低于或等于5×1018原子/ cm3的浓度 。

    DISPLAY DEVICE
    12.
    发明申请
    DISPLAY DEVICE 有权

    公开(公告)号：US20250020962A1

    公开(公告)日：2025-01-16

    申请号：US18904123

    申请日：2024-10-02

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Masatoshi YOKOYAMA ,  Shigeki KOMORI ,  Manabu SATO ,  Kenichi OKAZAKI ,  Shunpei YAMAZAKI

    IPC: G02F1/1362 ,  G02F1/1333 ,  G02F1/1343

    Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

    DISPLAY DEVICE
    13.
    发明申请
    DISPLAY DEVICE 有权

    公开(公告)号：US20230129465A1

    公开(公告)日：2023-04-27

    申请号：US18085689

    申请日：2022-12-21

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Masatoshi YOKOYAMA ,  Shigeki KOMORI ,  Manabu SATO ,  Kenichi OKAZAKI ,  Shunpei YAMAZAKI

    IPC: G02F1/1362 ,  G02F1/1333 ,  G02F1/1343

    Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

    SEMICONDUCTOR DEVICE
    14.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220123150A1

    公开(公告)日：2022-04-21

    申请号：US17567812

    申请日：2022-01-03

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Masahiro TAKAHASHI ,  Takuya HIROHASHI ,  Katsuaki TOCHIBAYASHI ,  Yasutaka NAKAZAWA ,  Masatoshi YOKOYAMA

    IPC: H01L29/786 ,  H01L29/45 ,  H01L29/49

    Abstract: It is an object to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. A semiconductor device having a stacked-layer structure of a gate insulating layer; a first gate electrode in contact with one surface of the gate insulating layer; an oxide semiconductor layer in contact with the other surface of the gate insulating layer and overlapping with the first gate electrode; and a source electrode, a drain electrode, and an oxide insulating layer which are in contact with the oxide semiconductor layer is provided, in which the nitrogen concentration of the oxide semiconductor layer is 2×1019 atoms/cm3 or lower and the source electrode and the drain electrode include one or more of tungsten, platinum, and molybdenum.

    DISPLAY DEVICE
    15.
    发明申请
    DISPLAY DEVICE 有权

    公开(公告)号：US20210333668A1

    公开(公告)日：2021-10-28

    申请号：US17366474

    申请日：2021-07-02

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Masatoshi YOKOYAMA ,  Shigeki KOMORI ,  Manabu SATO ,  Kenichi OKAZAKI ,  Shunpei YAMAZAKI

    IPC: G02F1/1362 ,  G02F1/1333 ,  G02F1/1343

    Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

    SEMICONDUCTOR DEVICE
    17.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20130099232A1

    公开(公告)日：2013-04-25

    申请号：US13652686

    申请日：2012-10-16

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Takayuki CHO ,  Shunsuke KOSHIOKA ,  Masatoshi YOKOYAMA ,  Shunpei YAMAZAKI

    IPC: H01L29/786

    CPC classification number: H01L29/78693 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

    Abstract: To provide a highly reliable semiconductor device which includes a transistor including an oxide semiconductor, in a semiconductor device including a staggered transistor having a bottom-gate structure provided over a glass substrate, a gate insulating film in which a first gate insulating film and a second gate insulating film, whose compositions are different from each other, are stacked in this order is provided over a gate electrode layer. Alternatively, in a staggered transistor having a bottom-gate structure, a protective insulating film is provided between a glass substrate and a gate electrode layer. A metal element contained in the glass substrate has a concentration lower than or equal to 5×1018 atoms/cm3 (preferably, lower than or equal to 1×1018 atoms/cm3) at the interface between the first gate insulating film and the second gate insulating film or the interface between the gate electrode layer and a gate insulating film.

    Abstract translation: 为了提供一种高可靠性的半导体器件，其包括具有氧化物半导体的晶体管，在包括设置在玻璃基板上的具有底栅结构的交错晶体管的半导体器件中，栅极绝缘膜，其中第一栅极绝缘膜和第二栅极绝缘膜 其栅极绝缘膜的组成彼此不同，按栅极电极层设置。 或者，在具有底栅结构的交错晶体管中，在玻璃基板和栅电极层之间设置保护绝缘膜。 包含在玻璃基板中的金属元素在第一栅极绝缘膜和第二栅极之间的界面处具有低于或等于5×1018原子/ cm3（优选低于或等于1×1018原子/ cm3）的浓度 绝缘膜或栅极电极层与栅极绝缘膜之间的界面。

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