SEMICONDUCTOR DEVICE
    7.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号:US20130099232A1

    公开(公告)日:2013-04-25

    申请号:US13652686

    申请日:2012-10-16

    Abstract: To provide a highly reliable semiconductor device which includes a transistor including an oxide semiconductor, in a semiconductor device including a staggered transistor having a bottom-gate structure provided over a glass substrate, a gate insulating film in which a first gate insulating film and a second gate insulating film, whose compositions are different from each other, are stacked in this order is provided over a gate electrode layer. Alternatively, in a staggered transistor having a bottom-gate structure, a protective insulating film is provided between a glass substrate and a gate electrode layer. A metal element contained in the glass substrate has a concentration lower than or equal to 5×1018 atoms/cm3 (preferably, lower than or equal to 1×1018 atoms/cm3) at the interface between the first gate insulating film and the second gate insulating film or the interface between the gate electrode layer and a gate insulating film.

    Abstract translation: 为了提供一种高可靠性的半导体器件,其包括具有氧化物半导体的晶体管,在包括设置在玻璃基板上的具有底栅结构的交错晶体管的半导体器件中,栅极绝缘膜,其中第一栅极绝缘膜和第二栅极绝缘膜 其栅极绝缘膜的组成彼此不同,按栅极电极层设置。 或者,在具有底栅结构的交错晶体管中,在玻璃基板和栅电极层之间设置保护绝缘膜。 包含在玻璃基板中的金属元素在第一栅极绝缘膜和第二栅极之间的界面处具有低于或等于5×1018原子/ cm3(优选低于或等于1×1018原子/ cm3)的浓度 绝缘膜或栅极电极层与栅极绝缘膜之间的界面。

    METHOD FOR FORMING WIRING, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    10.
    发明申请
    METHOD FOR FORMING WIRING, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
    用于形成接线的方法,半导体器件以及制造半导体器件的方法

    公开(公告)号:US20130302938A1

    公开(公告)日:2013-11-14

    申请号:US13875563

    申请日:2013-05-02

    Abstract: A wiring which is formed using a conductive film containing copper and whose shape is controlled is provided. A transistor including an electrode which is formed in the same layer as the wiring is provided. Further, a semiconductor device including the transistor and the wiring is provided. A resist mask is formed over a second conductive film stacked over a first conductive film; part of the second conductive film and part of the first conductive film are removed with use of the resist mask as a mask so that the first conductive film has a taper angle greater than or equal to 15° and less than or equal to 45°; and the resist mask is removed. The first conductive film contains copper.

    Abstract translation: 提供了使用含有铜的导电膜形成并且其形状被控制的布线。 提供了包括与布线形成在同一层中的电极的晶体管。 此外,提供了包括晶体管和布线的半导体器件。 在叠置在第一导电膜上的第二导电膜上形成抗蚀剂掩模; 使用抗蚀剂掩模作为掩模去除第二导电膜的一部分和第一导电膜的一部分,使得第一导电膜具有大于或等于15°且小于或等于45°的锥角; 并且去除抗蚀剂掩模。 第一导电膜含有铜。

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