SEMICONDUCTOR DEVICE, DISPLAY APPARATUS, AND ELECTRONIC DEVICE

    公开(公告)号:US20240257751A1

    公开(公告)日:2024-08-01

    申请号:US18560718

    申请日:2022-05-17

    CPC classification number: G09G3/3233 G09G2310/08 G09G2330/021 G09G2360/14

    Abstract: A semiconductor device including a display pixel circuit and an imaging pixel circuit is provided. The semiconductor device includes first and second circuits; the first circuit includes a light-emitting device; and the second circuit includes a light-receiving device, first to fifth transistors, and a first capacitor. The light-receiving device includes first and second terminals, and the light-emitting device includes third and fourth terminals. A first terminal of the first transistor is electrically connected to a first terminal of the second transistor, and a gate of the second transistor is electrically connected to a first terminal of the third transistor and a first terminal of the first capacitor. A second terminal of the first capacitor is electrically connected to a first terminal of the fourth transistor and a first terminal of the fifth transistor. A second terminal of the fifth transistor is electrically connected to the first terminal of the light-receiving device, the second terminal of the light-receiving device is electrically connected to the third terminal of the light-emitting device, and the fourth terminal of the light-emitting device is electrically connected to a wiring.

    IMAGING SYSTEM AND MONITORING SYSTEM

    公开(公告)号:US20220417390A1

    公开(公告)日:2022-12-29

    申请号:US17764622

    申请日:2020-09-29

    Abstract: Color filters are used for color images obtained using imaging devices such as conventional image sensors. Imaging elements with color filters are sold, and an appropriate combination of the imaging element and a lens or the like is incorporated in an electronic device. Only providing a color filter to overlap a light-receiving region of an image sensor reduces the amount of light reaching the light-receiving region. An imaging system of the present invention includes a solid-state imaging element without a color filter, a storage device, and a learning device. Since the color filter is not included, colorization is performed on obtained monochrome image data (analog data), and coloring is performed using an AI system.

    METHOD FOR PREDICTING ELECTRICAL CHARACTERISTICS OF SEMICONDUCTOR ELEMENT

    公开(公告)号:US20220252658A1

    公开(公告)日:2022-08-11

    申请号:US17611987

    申请日:2020-05-11

    Abstract: The electrical characteristics of a semiconductor element are predicted from a process list. A feature-value calculation portion and a feature prediction portion are used to predict the electrical characteristics of the semiconductor element. The feature-value calculation portion includes a first learning model and a second learning model, and the feature prediction portion includes a third learning model. The first learning model includes a step of learning the process list for generating the semiconductor element and a step of generating a first feature value. The second learning model includes a step of learning the electrical characteristics of the semiconductor element generated in accordance with the process list and a step of generating a second feature value. The third learning model includes a step of performing multimodal learning with use of the first feature value and the second feature value and a step of outputting a value of a variable used in a formula for the semiconductor element characteristics. The first to third learning models include neural networks different from each other.

    DISPLAY DEVICE AND ELECTRONIC DEVICE
    14.
    发明申请
    DISPLAY DEVICE AND ELECTRONIC DEVICE 有权
    显示设备和电子设备

    公开(公告)号:US20140240631A1

    公开(公告)日:2014-08-28

    申请号:US14184996

    申请日:2014-02-20

    Abstract: Transistors each include a gate electrode, a gate insulating layer over the gate electrode, an oxide semiconductor layer over the gate insulating layer, and a source electrode and a drain electrode over the oxide semiconductor layer. A driver circuit portion includes first to third wirings formed in the same step as the gate electrode, fourth to sixth wirings formed in the same step as the source electrode and the drain electrode, a seventh wiring formed in the same step as a pixel electrode, a first region where the second wiring intersects with the fifth wiring, and a second region where the third wiring intersects with the sixth wiring. The first wiring is connected to the fourth wiring through the seventh wiring. A distance between the wirings in the second region is longer than that in the first region.

    Abstract translation: 晶体管各自包括栅电极,栅电极上的栅极绝缘层,栅极绝缘层上的氧化物半导体层,以及氧化物半导体层上的源电极和漏电极。 驱动器电路部分包括以与栅电极相同的步骤形成的第一至第三布线,以与源电极和漏电极相同的步骤形成的第四至第六布线,与像素电极在相同步骤中形成的第七布线, 第二布线与第五布线相交的第一区域和第三布线与第六布线相交的第二区域。 第一布线通过第七布线连接到第四布线。 第二区域中的布线之间的距离比第一区域长。

    OPTICAL DEVICE
    15.
    发明申请

    公开(公告)号:US20240411134A1

    公开(公告)日:2024-12-12

    申请号:US18698873

    申请日:2022-10-06

    Abstract: An optical device of the present invention includes a display apparatus (10) and an optical system (12). The display apparatus (10) includes a display region (60) and a sensor region (52). The optical system (12) includes a first mirror (21) and a second mirror (22). The first mirror (21) includes a first surface and a second surface. The display region (60) has a function of emitting first light (31). The first mirror (21) is provided on an optical path of the first light (31) and has a function of transmitting the first light (31) incident on the first surface to the second surface and a function of reflecting second light (33) incident on the second surface. The second mirror (22) is provided on an optical path of the second light (33) and has a function of reflecting the second light (33). The sensor region (52) has a function of detecting the second light (33) via the first mirror (21) and the second mirror (22).

    OPERATION METHOD OF SEMICONDUCTOR DEVICE
    16.
    发明公开

    公开(公告)号:US20240143441A1

    公开(公告)日:2024-05-02

    申请号:US18382077

    申请日:2023-10-20

    CPC classification number: G06F11/1068 G06F7/5443 G06F11/076

    Abstract: To provide an operation method of a semiconductor device in which a variation in arithmetic operation results is reduced. The semiconductor device includes first and second cell arrays and first to fifth circuits. First, third standard data is written from the fourth circuit to the second cell array, and first standard data is written from the first circuit to the first cell array. Then, second standard data is transmitted from the second circuit to the first cell array, a result of a product-sum operation of the first standard data and the second standard data is input from the first cell array to the third circuit, and fourth standard data corresponding to the result of the product-sum operation is transmitted from the third circuit to the second cell array. A result of a product-sum operation of the third standard data and the fourth standard data is input from the second cell array to the fifth circuit, and an output value corresponding to the result of the product-sum operation is output from the fifth circuit. Correction data corresponding to the difference between the output value and an expected value is retained in an empty cell of the first cell array and correction coefficients of the first and second cell arrays are calculated.

    AUDIO DEVICE AND OPERATION METHOD THEREOF

    公开(公告)号:US20220366928A1

    公开(公告)日:2022-11-17

    申请号:US17630090

    申请日:2020-07-29

    Abstract: An audio device capable of inhibiting malfunction of an information terminal is provided. The audio device includes a sound sensor portion, a sound separation portion, a sound determination portion, and a processing portion. The sound sensor portion has a function of sensing sound. The sound separation portion has a function of separating the sound sensed by the sound sensor portion into a voice and sound other than a voice. The sound determination portion has a function of storing the feature quantity of the sound. The sound determination portion has a function of determining, with a machine learning model such as a neural network model, whether the feature quantity of the voice separated by the sound separation portion is the stored feature quantity. The processing portion has a function of analyzing an instruction contained in the voice and generating an instruction signal representing the content of the instruction in the case where the feature quantity of the voice is the stored feature quantity. The processing portion has a function of performing, on the sound other than a voice separated by the sound separation portion, processing for canceling the sound other than a voice. Specifically, the processing portion has a function of performing, on the sound other than a voice, processing for inverting the phase thereof.

    DISPLAY DEVICE
    18.
    发明申请
    DISPLAY DEVICE 审中-公开
    显示设备

    公开(公告)号:US20150035777A1

    公开(公告)日:2015-02-05

    申请号:US14444799

    申请日:2014-07-28

    CPC classification number: G06F1/1652 G06F3/041 G06F2203/04102

    Abstract: A display device with low power consumption is provided. Furthermore, a display device in which an image is displayed in a region that can be used in a folded state is provided. The conceived display device includes a display portion that can be opened and folded, a sensing portion that senses a folded state of the display portion, and an image processing portion that generates, when the display portion is in the folded state, an image in which a black image is displayed in part of the display portion.

    Abstract translation: 提供低功耗的显示装置。 此外,提供了其中在可以以折叠状态使用的区域中显示图像的显示装置。 构想的显示装置包括可以打开和折叠的显示部分,感测显示部分的折叠状态的感测部分,以及当显示部分处于折叠状态时生成图像处理部分的图像,其中, 在显示部分的一部分显示黑色图像。

    SEMICONDUCTOR DEVICE AND DISPLAY DEVICE
    20.
    发明申请
    SEMICONDUCTOR DEVICE AND DISPLAY DEVICE 有权
    半导体器件和显示器件

    公开(公告)号:US20130168670A1

    公开(公告)日:2013-07-04

    申请号:US13777106

    申请日:2013-02-26

    CPC classification number: H01L29/7869 H01L27/1225 H01L27/1251

    Abstract: A semiconductor device including a first gate electrode and a second gate electrode formed apart from each other over an insulating surface, an oxide semiconductor film including a region overlapping with the first gate electrode with a gate insulating film interposed therebetween, a region overlapping with the second gate electrode with the gate insulating film interposed therebetween, and a region overlapping with neither the first gate electrode nor the second gate electrode, and an insulating film covering the gate insulating film, the first gate electrode, the second gate electrode, and the oxide semiconductor film, and being in direct contact with the oxide semiconductor film is provided.

    Abstract translation: 一种半导体器件,包括在绝缘表面上彼此分开形成的第一栅电极和第二栅电极,包括与第一栅极重叠的区域的氧化物半导体膜,其间插入有栅极绝缘膜,与第二栅极重叠的区域 栅极电极,其间插入有栅极绝缘膜,以及与第一栅极电极和第二栅极电极都不重叠的区域,以及覆盖栅极绝缘膜,第一栅极电极,第二栅极电极和氧化物半导体的绝缘膜 膜,并且与氧化物半导体膜直接接触。

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