公开(公告)号：US09905435B2

公开(公告)日：2018-02-27

申请号：US14849852

申请日：2015-09-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Daisuke Kurosaki ,  Yukinori Shima ,  Takuya Handa

IPC: H01L21/477 ,  H01L21/02

CPC classification number: H01L21/477 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02172 ,  H01L21/02274 ,  H01L21/02323 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02614 ,  H01L21/02631 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78693

Abstract: In a semiconductor device including an oxide semiconductor, a change in electrical characteristics is inhibited and reliability is improved. The semiconductor device is manufactured by a method including first to fourth steps. The first step includes a step of forming an oxide semiconductor film, the second step includes a step of forming an oxide insulating film over the oxide semiconductor film, the third step includes a step of forming a protective film over the oxide insulating film, and the fourth step includes a step of adding oxygen to the oxide insulating film through the protective film. In the first step, the oxide semiconductor film is formed under a condition in which an oxygen vacancy is formed. The oxygen from the oxide insulating film fills the oxygen vacancy after the fourth step.

公开(公告)号：US09799290B2

公开(公告)日：2017-10-24

申请号：US14978390

申请日：2015-12-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kenichi Okazaki ,  Masahiro Watanabe ,  Takuya Handa

IPC: G09G3/36 ,  G09G3/32 ,  H01L27/12 ,  G09G3/3225

CPC classification number: G09G3/3648 ,  G09G3/3225 ,  G09G2300/0439 ,  G09G2310/08 ,  H01L27/1225 ,  H01L27/124

Abstract: A highly reliable semiconductor device that includes a transistor including an oxide semiconductor, which can display a high-definition image and can be manufactured with a high yield. The semiconductor device includes a pixel portion including a plurality of pixels, a gate signal line driver circuit portion, and a source signal line driver circuit portion including a first circuit that controls timing of sampling video signals and a second circuit that samples the video signals in accordance with the timing and then inputs the sampled video signals to the pixels. The second circuit includes a plurality of transistors in each of which an oxide semiconductor stacked layer is used as a channel formation region, the first circuit and the second circuit are electrically connected to each other by a wiring, and the wiring is electrically connected to gates of at least two transistors of the plurality of transistors.

公开(公告)号：US09660093B2

公开(公告)日：2017-05-23

申请号：US14047209

申请日：2013-10-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kenichi Okazaki ,  Mitsuo Mashiyama ,  Takuya Handa ,  Masahiro Watanabe ,  Hajime Tokunaga

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L27/1248 ,  G02F1/1368 ,  H01L21/70 ,  H01L27/1052 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78693 ,  H01L51/50

Abstract: Stable electrical characteristics of a transistor including an oxide semiconductor layer are achieved. A highly reliable semiconductor device including the transistor is provided. The semiconductor device includes a multilayer film formed of an oxide layer and an oxide semiconductor layer, a gate insulating film in contact with the oxide layer, and a gate electrode overlapping with the multilayer film with the gate insulating film interposed therebetween. The oxide layer contains a common element to the oxide semiconductor layer and has a large energy gap than the oxide semiconductor layer. The composition between the oxide layer and the oxide semiconductor layer gradually changes.

公开(公告)号：US08963155B2

公开(公告)日：2015-02-24

申请号：US13953316

申请日：2013-07-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hajime Tokunaga ,  Takuya Handa

IPC: H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L29/24 ,  H01L21/02 ,  H01L29/66 ,  H01L29/786

Abstract: To provide a semiconductor device which has transistor characteristics with little variation and includes an oxide semiconductor. The semiconductor device includes an insulating film over a conductive film and an oxide semiconductor film over the insulating film. The oxide semiconductor film includes a first oxide semiconductor layer, a second oxide semiconductor layer over the first oxide semiconductor layer, and a third oxide semiconductor layer over the second oxide semiconductor layer. The energy level of a bottom of a conduction band of the second oxide semiconductor layer is lower than those of the first and third oxide semiconductor layers. An end portion of the second oxide semiconductor layer is positioned on an inner side than an end portion of the first oxide semiconductor layer.

公开(公告)号：US11309181B2

公开(公告)日：2022-04-19

申请号：US15609148

申请日：2017-05-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro Watanabe ,  Takuya Handa ,  Yasuharu Hosaka ,  Kenichi Okazaki ,  Shunpei Yamazaki

IPC: C23C14/08 ,  H01L21/02 ,  C23C14/34 ,  H01J37/34 ,  H01L29/786 ,  H01L29/66 ,  H01L21/67 ,  C23C14/54 ,  C23C14/56 ,  H01L21/687 ,  H01L27/32 ,  G02F1/1343 ,  G02F1/1368 ,  G02F1/13

Abstract: To provide a sputtering apparatus capable of forming a semiconductor film in which impurities such as hydrogen or water are reduced. The sputtering apparatus is capable of forming a semiconductor film and includes a deposition chamber, a gas supply device connected to the deposition chamber, a gas refining device connected to the gas supply device, a vacuum pump for evacuating the deposition chamber, a target disposed in the deposition chamber, and a cathode disposed to face the target. The gas supply device is configured to supply at least one of an argon gas, an oxygen gas, and a nitrogen gas. The partial pressure of hydrogen molecules is lower than or equal to 0.01 Pa and the partial pressure of water molecules is lower than or equal to 0.0001 Pa in the deposition chamber.

公开(公告)号：US10438815B2

公开(公告)日：2019-10-08

申请号：US15893748

申请日：2018-02-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Daisuke Kurosaki ,  Yukinori Shima ,  Takuya Handa

IPC: H01L21/477 ,  H01L21/02 ,  H01L29/49 ,  H01L29/66 ,  H01L29/786

Abstract: In a semiconductor device including an oxide semiconductor, a change in electrical characteristics is inhibited and reliability is improved. The semiconductor device is manufactured by a method including first to fourth steps. The first step includes a step of forming an oxide semiconductor film, the second step includes a step of forming an oxide insulating film over the oxide semiconductor film, the third step includes a step of forming a protective film over the oxide insulating film, and the fourth step includes a step of adding oxygen to the oxide insulating film through the protective film. In the first step, the oxide semiconductor film is formed under a condition in which an oxygen vacancy is formed. The oxygen from the oxide insulating film fills the oxygen vacancy after the fourth step.

公开(公告)号：US09905516B2

公开(公告)日：2018-02-27

申请号：US14847461

申请日：2015-09-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro Watanabe ,  Mitsuo Mashiyama ,  Takuya Handa ,  Kenichi Okazaki

IPC: H01L23/00 ,  H01L29/786

CPC classification number: H01L23/564 ,  H01L29/78606 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A metal oxide layer is in contact with an interlayer insulating layer covering a transistor, and has a stacked-layer structure including a first metal oxide layer having an amorphous structure and a second metal oxide layer having a polycrystalline structure. In the first metal oxide layer, there are no crystal grain boundaries, and grid intervals are wide as compared to those in a metal oxide layer in a crystalline state; thus, the first metal oxide layer easily traps moisture between the lattices. In the second metal oxide layer having a polycrystalline structure, crystal parts other than crystal grain boundary portions have dense structures and extremely low moisture permeability. Thus, the structure in which the metal oxide layer including the first metal oxide layer and the second metal oxide layer is in contact with the interlayer insulating layer can effectively prevent moisture permeation into the transistor.

公开(公告)号：US09142681B2

公开(公告)日：2015-09-22

申请号：US13623913

申请日：2012-09-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro Watanabe ,  Mitsuo Mashiyama ,  Takuya Handa ,  Kenichi Okazaki

IPC: H01L29/04 ,  H01L21/336 ,  H01L29/786

CPC classification number: H01L23/564 ,  H01L29/78606 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A metal oxide layer is in contact with an interlayer insulating layer covering a transistor, and has a stacked-layer structure including a first metal oxide layer having an amorphous structure and a second metal oxide layer having a polycrystalline structure. In the first metal oxide layer, there are no crystal grain boundaries, and grid intervals are wide as compared to those in a metal oxide layer in a crystalline state; thus, the first metal oxide layer easily traps moisture between the lattices. In the second metal oxide layer having a polycrystalline structure, crystal parts other than crystal grain boundary portions have dense structures and extremely low moisture permeability. Thus, the structure in which the metal oxide layer including the first metal oxide layer and the second metal oxide layer is in contact with the interlayer insulating layer can effectively prevent moisture permeation into the transistor.

Abstract translation: 金属氧化物层与覆盖晶体管的层间绝缘层接触，并且具有包括具有非晶结构的第一金属氧化物层和具有多晶结构的第二金属氧化物层的层叠结构。 在第一金属氧化物层中，与结晶状态的金属氧化物层相比，不存在晶粒边界，栅格间隔宽， 因此，第一金属氧化物层容易捕获晶格之间的水分。 在具有多晶结构的第二金属氧化物层中，除了晶界部分之外的晶体部分具有致密的结构和极低的透湿性。 因此，包括第一金属氧化物层和第二金属氧化物层的金属氧化物层与层间绝缘层接触的结构可以有效地防止水分渗入晶体管。

公开(公告)号：US08785928B2

公开(公告)日：2014-07-22

申请号：US13905476

申请日：2013-05-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kenichi Okazaki ,  Masahiro Watanabe ,  Takuya Handa

IPC: H01L29/786

CPC classification number: G09G3/3648 ,  G09G3/3225 ,  G09G2300/0439 ,  G09G2310/08 ,  H01L27/1225 ,  H01L27/124

Abstract: A highly reliable semiconductor device that includes a transistor including an oxide semiconductor, which can display a high-definition image and can be manufactured with a high yield. The semiconductor device includes a pixel portion including a plurality of pixels, a gate signal line driver circuit portion, and a source signal line driver circuit portion including a first circuit that controls timing of sampling video signals and a second circuit that samples the video signals in accordance with the timing and then inputs the sampled video signals to the pixels. The second circuit includes a plurality of transistors in each of which an oxide semiconductor stacked layer is used as a channel formation region, the first circuit and the second circuit are electrically connected to each other by a wiring, and the wiring is electrically connected to gates of at least two transistors of the plurality of transistors.

Abstract translation: 一种高度可靠的半导体器件，其包括可以显示高清晰度图像并且可以以高产率制造的包括氧化物半导体的晶体管。 该半导体器件包括包括多个像素的像素部分，栅极信号线驱动器电路部分和源极信号线驱动器电路部分，该源极信号线驱动器电路部分包括控制采样视频信号的定时的第一电路和将视频信号采样的第二电路 根据定时，然后将采样的视频信号输入到像素。 第二电路包括多个晶体管，其中每个晶体管使用氧化物半导体层叠层作为沟道形成区域，第一电路和第二电路通过布线彼此电连接，并且布线电连接到栅极 的多个晶体管中的至少两个晶体管。

公开(公告)号：US20140103335A1

公开(公告)日：2014-04-17

申请号：US14047209

申请日：2013-10-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kenichi Okazaki ,  Mitsuo Mashiyama ,  Takuya Handa ,  Masahiro Watanabe ,  Hajime Tokunaga

IPC: H01L29/786

CPC classification number: H01L27/1248 ,  G02F1/1368 ,  H01L21/70 ,  H01L27/1052 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78693 ,  H01L51/50

Abstract: Stable electrical characteristics of a transistor including an oxide semiconductor layer are achieved. A highly reliable semiconductor device including the transistor is provided. The semiconductor device includes a multilayer film formed of an oxide layer and an oxide semiconductor layer, a gate insulating film in contact with the oxide layer, and a gate electrode overlapping with the multilayer film with the gate insulating film interposed therebetween. The oxide layer contains a common element to the oxide semiconductor layer and has a large energy gap than the oxide semiconductor layer. The composition between the oxide layer and the oxide semiconductor layer gradually changes.

Abstract translation: 实现了包括氧化物半导体层的晶体管的稳定的电特性。 提供了包括晶体管的高可靠性半导体器件。 半导体器件包括由氧化物层和氧化物半导体层形成的多层膜，与氧化物层接触的栅极绝缘膜，以及与多层膜重叠的栅电极，其间插入有栅极绝缘膜。 氧化物层包含与氧化物半导体层共同的元素，并且具有比氧化物半导体层大的能隙。 氧化物层和氧化物半导体层之间的组成逐渐变化。