公开(公告)号：US11616149B2

公开(公告)日：2023-03-28

申请号：US16768810

申请日：2018-11-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Takuya Handa ,  Yasuharu Hosaka ,  Shota Sambonsuge ,  Yasumasa Yamane ,  Kenichi Okazaki

IPC: H01L29/786 ,  H01L29/24

Abstract: A semiconductor device with improved reliability is provided. The semiconductor device includes a first oxide, a second oxide over the first oxide, a third oxide over the second oxide, and an insulator over the third oxide. The second oxide contains In, an element M (M is Al, Ga, Y, or Sn), and Zn. The first oxide and the third oxide each include a region whose In concentration is lower than that in the second oxide.

公开(公告)号：US10032934B2

公开(公告)日：2018-07-24

申请号：US15661312

申请日：2017-07-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hajime Tokunaga ,  Takuya Handa

IPC: H01L29/24 ,  H01L29/786 ,  H01L27/146 ,  H01L27/12 ,  H01L29/49 ,  H01L29/45 ,  G02F1/1368 ,  H01L27/32

Abstract: To provide a semiconductor device which has transistor characteristics with little variation and includes an oxide semiconductor. The semiconductor device includes an insulating film over a conductive film and an oxide semiconductor film over the insulating film. The oxide semiconductor film includes a first oxide semiconductor layer, a second oxide semiconductor layer over the first oxide semiconductor layer, and a third oxide semiconductor layer over the second oxide semiconductor layer. The energy level of a bottom of a conduction band of the second oxide semiconductor layer is lower than those of the first and third oxide semiconductor layers. An end portion of the second oxide semiconductor layer is positioned on an inner side than an end portion of the first oxide semiconductor layer.

公开(公告)号：US09761738B2

公开(公告)日：2017-09-12

申请号：US15432142

申请日：2017-02-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hajime Tokunaga ,  Takuya Handa

IPC: H01L29/24 ,  H01L31/036 ,  H01L29/786 ,  H01L29/49 ,  H01L29/45 ,  H01L27/12 ,  H01L27/146 ,  H01L27/32 ,  G02F1/1368

CPC classification number: H01L29/78696 ,  G02F1/1368 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/1225 ,  H01L27/14616 ,  H01L27/14632 ,  H01L27/14687 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

Abstract: To provide a semiconductor device which has transistor characteristics with little variation and includes an oxide semiconductor. The semiconductor device includes an insulating film over a conductive film and an oxide semiconductor film over the insulating film. The oxide semiconductor film includes a first oxide semiconductor layer, a second oxide semiconductor layer over the first oxide semiconductor layer, and a third oxide semiconductor layer over the second oxide semiconductor layer. The energy level of a bottom of a conduction band of the second oxide semiconductor layer is lower than those of the first and third oxide semiconductor layers. An end portion of the second oxide semiconductor layer is positioned on an inner side than an end portion of the first oxide semiconductor layer.

公开(公告)号：US09583634B2

公开(公告)日：2017-02-28

申请号：US14585904

申请日：2014-12-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hajime Tokunaga ,  Takuya Handa

IPC: H01L29/04 ,  H01L31/036 ,  H01L29/786 ,  H01L29/24 ,  H01L21/02 ,  H01L29/66 ,  H01L27/146

CPC classification number: H01L29/78696 ,  G02F1/1368 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/1225 ,  H01L27/14616 ,  H01L27/14632 ,  H01L27/14687 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

Abstract: To provide a semiconductor device which has transistor characteristics with little variation and includes an oxide semiconductor. The semiconductor device includes an insulating film over a conductive film and an oxide semiconductor film over the insulating film. The oxide semiconductor film includes a first oxide semiconductor layer, a second oxide semiconductor layer over the first oxide semiconductor layer, and a third oxide semiconductor layer over the second oxide semiconductor layer. The energy level of a bottom of a conduction band of the second oxide semiconductor layer is lower than those of the first and third oxide semiconductor layers. An end portion of the second oxide semiconductor layer is positioned on an inner side than an end portion of the first oxide semiconductor layer.

Abstract translation: 提供具有几乎不变化的晶体管特性并包括氧化物半导体的半导体器件。 半导体器件包括绝缘膜上的导电膜上的绝缘膜和氧化物半导体膜。 氧化物半导体膜包括第一氧化物半导体层，第一氧化物半导体层上的第二氧化物半导体层，以及在第二氧化物半导体层上的第三氧化物半导体层。 第二氧化物半导体层的导带的底部的能级低于第一和第三氧化物半导体层的能级。 第二氧化物半导体层的端部位于比第一氧化物半导体层的端部更靠内侧。

公开(公告)号：US09224758B2

公开(公告)日：2015-12-29

申请号：US14334079

申请日：2014-07-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kenichi Okazaki ,  Masahiro Watanabe ,  Takuya Handa

IPC: H01L27/12

CPC classification number: G09G3/3648 ,  G09G3/3225 ,  G09G2300/0439 ,  G09G2310/08 ,  H01L27/1225 ,  H01L27/124

Abstract: A highly reliable semiconductor device that includes a transistor including an oxide semiconductor, which can display a high-definition image and can be manufactured with a high yield. The semiconductor device includes a pixel portion including a plurality of pixels, a gate signal line driver circuit portion, and a source signal line driver circuit portion including a first circuit that controls timing of sampling video signals and a second circuit that samples the video signals in accordance with the timing and then inputs the sampled video signals to the pixels. The second circuit includes a plurality of transistors in each of which an oxide semiconductor stacked layer is used as a channel formation region, the first circuit and the second circuit are electrically connected to each other by a wiring, and the wiring is electrically connected to gates of at least two transistors of the plurality of transistors.

Abstract translation: 一种高度可靠的半导体器件，其包括可以显示高清晰度图像并且可以以高产率制造的包括氧化物半导体的晶体管。 该半导体器件包括包括多个像素的像素部分，栅极信号线驱动器电路部分和源极信号线驱动器电路部分，该源极信号线驱动器电路部分包括控制采样视频信号的定时的第一电路和将视频信号采样的第二电路 根据定时，然后将采样的视频信号输入到像素。 第二电路包括多个晶体管，其中每个晶体管使用氧化物半导体层叠层作为沟道形成区域，第一电路和第二电路通过布线彼此电连接，并且布线电连接到栅极 的多个晶体管中的至少两个晶体管。

公开(公告)号：US09209256B2

公开(公告)日：2015-12-08

申请号：US13953316

申请日：2013-07-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hajime Tokunaga ,  Takuya Handa

IPC: H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L29/786 ,  H01L29/24 ,  H01L21/02 ,  H01L29/66 ,  H01L27/146

CPC classification number: H01L29/78696 ,  G02F1/1368 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/1225 ,  H01L27/14616 ,  H01L27/14632 ,  H01L27/14687 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

Abstract: To provide a semiconductor device which has transistor characteristics with little variation and includes an oxide semiconductor. The semiconductor device includes an insulating film over a conductive film and an oxide semiconductor film over the insulating film. The oxide semiconductor film includes a first oxide semiconductor layer, a second oxide semiconductor layer over the first oxide semiconductor layer, and a third oxide semiconductor layer over the second oxide semiconductor layer. The energy level of a bottom of a conduction band of the second oxide semiconductor layer is lower than those of the first and third oxide semiconductor layers. An end portion of the second oxide semiconductor layer is positioned on an inner side than an end portion of the first oxide semiconductor layer.

Abstract translation: 提供具有几乎不变化的晶体管特性并包括氧化物半导体的半导体器件。 半导体器件包括绝缘膜上的导电膜上的绝缘膜和氧化物半导体膜。 氧化物半导体膜包括第一氧化物半导体层，第一氧化物半导体层上的第二氧化物半导体层，以及在第二氧化物半导体层上的第三氧化物半导体层。 第二氧化物半导体层的导带的底部的能级低于第一和第三氧化物半导体层的能级。 第二氧化物半导体层的端部位于比第一氧化物半导体层的端部更靠内侧。

公开(公告)号：US20140239296A1

公开(公告)日：2014-08-28

申请号：US14190874

申请日：2014-02-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hajime Tokunaga ,  Takuya Handa ,  Kenichi Okazaki

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/66742 ,  H01L29/66969

Abstract: A transistor or the like having high field-effect mobility is provided. A transistor or the like having stable electrical characteristics is provided. A semiconductor device including a first oxide semiconductor layer, a second oxide semiconductor layer, a gate insulating film, and a gate electrode which partly overlap with one another is provided. The second oxide semiconductor layer is positioned between the first oxide semiconductor layer and the gate insulating film. The gate insulating film is positioned between the second oxide semiconductor layer and the gate electrode. The first oxide semiconductor layer has fewer oxygen vacancies than those of the second oxide semiconductor layer.

Abstract translation: 提供具有高场效应迁移率的晶体管等。 提供具有稳定电特性的晶体管等。 提供了包括第一氧化物半导体层，第二氧化物半导体层，栅极绝缘膜和彼此部分重叠的栅电极的半导体器件。 第二氧化物半导体层位于第一氧化物半导体层和栅极绝缘膜之间。 栅极绝缘膜位于第二氧化物半导体层和栅电极之间。 第一氧化物半导体层具有比第二氧化物半导体层更少的氧空位。

公开(公告)号：US10217796B2

公开(公告)日：2019-02-26

申请号：US15594813

申请日：2017-05-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kenichi Okazaki ,  Mitsuo Mashiyama ,  Takuya Handa ,  Masahiro Watanabe ,  Hajime Tokunaga

IPC: H01L27/12 ,  H01L27/24 ,  H01L29/786 ,  G02F1/1368 ,  H01L21/70 ,  H01L27/105 ,  H01L29/24 ,  H01L51/50

Abstract: Stable electrical characteristics of a transistor including an oxide semiconductor layer are achieved. A highly reliable semiconductor device including the transistor is provided. The semiconductor device includes a multilayer film formed of an oxide layer and an oxide semiconductor layer, a gate insulating film in contact with the oxide layer, and a gate electrode overlapping with the multilayer film with the gate insulating film interposed therebetween. The oxide layer contains a common element to the oxide semiconductor layer and has a large energy gap than the oxide semiconductor layer. The composition between the oxide layer and the oxide semiconductor layer gradually changes.

公开(公告)号：US10205008B2

公开(公告)日：2019-02-12

申请号：US15664353

申请日：2017-07-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshimitsu Obonai ,  Hironobu Takahashi ,  Yasuharu Hosaka ,  Masahiro Watanabe ,  Takuya Handa ,  Yukinori Shima ,  Takashi Hamochi

IPC: H01L29/786 ,  H01L21/336 ,  H01L29/66 ,  H01L21/02 ,  H01L21/67

Abstract: Provided is a semiconductor device with favorable electrical characteristics. Provided is a semiconductor device with stable electrical characteristics. Provided is a manufacturing method of a semiconductor device with a high yield. The manufacturing method includes a first step of forming an insulating film over a substrate, a second step of transferring the substrate in an atmospheric atmosphere, a third step of heating the insulating film, and a fourth step of forming a metal oxide film. The third step and the fourth step are successively performed in an atmosphere where water vapor partial pressure is lower than water vapor partial pressure in the atmospheric air.

公开(公告)号：US10014414B2

公开(公告)日：2018-07-03

申请号：US14190874

申请日：2014-02-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hajime Tokunaga ,  Takuya Handa ,  Kenichi Okazaki

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/66742 ,  H01L29/66969

Abstract: A transistor or the like having high field-effect mobility is provided. A transistor or the like having stable electrical characteristics is provided. A semiconductor device including a first oxide semiconductor layer, a second oxide semiconductor layer, a gate insulating film, and a gate electrode which partly overlap with one another is provided. The second oxide semiconductor layer is positioned between the first oxide semiconductor layer and the gate insulating film. The gate insulating film is positioned between the second oxide semiconductor layer and the gate electrode. The first oxide semiconductor layer has fewer oxygen vacancies than those of the second oxide semiconductor layer.