公开(公告)号：US20060172664A1

公开(公告)日：2006-08-03

申请号：US11393278

申请日：2006-03-30

申请人： Yufei Chen ,  Lizhong Sun ,  Doohan Lee ,  Wei-Yung Hsu

发明人： Yufei Chen ,  Lizhong Sun ,  Doohan Lee ,  Wei-Yung Hsu

IPC分类号： B24B51/00 ,  B24B7/30 ,  B24B1/00

CPC分类号： B24B37/042 ,  B24B49/006 ,  H01L21/02074 ,  H01L21/3212 ,  Y02P70/605

摘要： Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material form thereon in a polishing apparatus having a rotational carrier head and a rotatable platen, wherein the substrate is disposed in the rotational carrier head and the platen has a polishing article disposed thereon, rotating the first carrier head at a first carrier head rotational rate and rotating a platen at a first platen rotational rate, contacting the substrate and the polishing article, accelerating the first carrier head rotational rate to a second carrier head rotational rate and accelerating the first platen rotational rate to a second platen rotational rate, and polishing the substrate at the second carrier head rotational rate and at the second platen rotational rate.

公开(公告)号：US20100130013A1

公开(公告)日：2010-05-27

申请号：US12622251

申请日：2009-11-19

申请人： Feng Q. Liu ,  Alain Duboust ,  Wen-Chiang Tu ,  Chenhao Ge ,  Kun Xu ,  Yuchun Wang ,  Yufei Chen

发明人： Feng Q. Liu ,  Alain Duboust ,  Wen-Chiang Tu ,  Chenhao Ge ,  Kun Xu ,  Yuchun Wang ,  Yufei Chen

IPC分类号： H01L21/306 ,  H01L21/304 ,  C09K13/06 ,  C11D3/20

CPC分类号： C11D3/3947 ,  C09G1/02 ,  C09K3/1463 ,  C11D7/08 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1683

摘要： A CMP method for polishing a phase change alloy on a substrate surface including positioning the substrate comprising a phase change alloy material on a platen containing a polishing pad and delivering a polishing slurry to the polishing pad. The polishing slurry includes colloidal particles with a particle size less than 60 nm, in an amount between 0.2% to about 10% by weight of slurry, a pH adjustor, a chelating agent, an oxidizing agent in an amount less than 1% by weight of slurry, and polyacrylic acid. The substrate on the platen is polished to remove a portion of the phase change alloy. A rinsing solution for rinsing the substrate on the platen includes deionized water and at least one component in the deionized water where the component selected from the group consisting of polyethylene imine, polyethylene glycol, polyacrylic amide, alcohol ethoxylates, polyacrylic acid, an azole containing compound, benzo-triazole, and combinations thereof.

摘要翻译： 一种用于在衬底表面上抛光相变合金的CMP方法，包括将包含相变合金材料的衬底定位在包含抛光垫的压板上并将抛光浆料输送到抛光垫。 抛光浆料包括粒度小于60nm的胶体颗粒，其浆料重量为0.2％至约10％，pH调节剂，螯合剂，小于1重量％的氧化剂 的浆料和聚丙烯酸。 抛光台板上的基板以除去一部分相变合金。 用于冲洗台板上的基材的冲洗溶液包括去离子水和去离子水中的至少一种组分，其中选自聚乙烯亚胺，聚乙二醇，聚丙烯酰胺，醇乙氧基化物，聚丙烯酸，含唑化合物 ，苯并三唑及其组合。

公开(公告)号：US20130189843A1

公开(公告)日：2013-07-25

申请号：US13747825

申请日：2013-01-23

申请人： You Wang ,  Wen-Chiang Tu ,  Lakshmanan Karuppiah ,  Yufei Chen

发明人： You Wang ,  Wen-Chiang Tu ,  Lakshmanan Karuppiah ,  Yufei Chen

IPC分类号： H01L21/306

CPC分类号： H01L21/30625 ,  C09G1/02 ,  H01L21/31058

摘要： A slurry for planarization of a photoresist includes abrasive particles, an oxidizer, a surface activation chemical, and a solvent.

摘要翻译： 用于平版化光致抗蚀剂的浆料包括磨料颗粒，氧化剂，表面活化化学品和溶剂。

公开(公告)号：US20130186850A1

公开(公告)日：2013-07-25

申请号：US13357535

申请日：2012-01-24

申请人： You Wang ,  Chenhao Ge ,  Yufei Chen ,  Yuchun Wang ,  Wen-Chiang Tu ,  Lakshmanan Karuppiah

发明人： You Wang ,  Chenhao Ge ,  Yufei Chen ,  Yuchun Wang ,  Wen-Chiang Tu ,  Lakshmanan Karuppiah

IPC分类号： C09K13/00 ,  C09K13/02 ,  H05K3/26

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/3212 ,  H01L23/53238 ,  H01L23/53257 ,  H01L2924/0002 ,  H05K3/045 ,  H05K3/107 ,  H01L2924/00

摘要： A slurry for chemical mechanical of a cobalt layer or a conductive layer over a cobalt layer includes abrasive particles, an organic complexing compound for Cu or Co ion complexion, a Co corrosion inhibitor that is 0.01-1.0 wt % of the slurry, an oxidizer, and a solvent. The slurry has a pH of 7-12.

摘要翻译： 用于钴层或钴层上的导电层的化学机械的浆料包括磨料颗粒，用于Cu或Co离子表面的有机络合化合物，作为浆料的0.01-1.0重量％的Co腐蚀抑制剂，氧化剂， 和溶剂。 浆液的pH为7-12。

公开(公告)号：US06558471B2

公开(公告)日：2003-05-06

申请号：US09771087

申请日：2001-01-26

申请人： Brian J. Brown ,  Yufei Chen ,  David G. Andeen ,  Madhavi Chandrachood

发明人： Brian J. Brown ,  Yufei Chen ,  David G. Andeen ,  Madhavi Chandrachood

IPC分类号： B08B100

CPC分类号： H01L21/67046 ,  B08B1/04 ,  B08B3/02

摘要： Methods and apparatuses are provided that remove a scrubber brush from contact with a wafer surface prior to slowing down the scrubber brush's rotational rate. The scrubbing method may include rotating a scrubber brush at a non-reduced rate, while the scrubber brush is in contact with the wafer and removing the scrubber brush from contact with the wafer while rotating the scrubber brush at the non-reduced rate. The scrubbing apparatus has a controller programmed to perform the scrubbing method.

摘要翻译： 提供了方法和装置，其在减缓洗涤器刷的旋转速率之前，将洗涤器刷与晶片表面接触。 洗涤方法可以包括以非降低的速率旋转洗涤器刷子，同时洗涤器刷子与晶片接触并且在以非减小的速率旋转洗涤器刷子的同时，使洗涤器刷子与晶片接触。 洗涤装置具有被编程为执行洗涤方法的控制器。