利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

15 条记录 (耗时 0.026 秒)

    SLURRY COMPOSITION FOR GST PHASE CHANGE MEMORY MATERIALS POLISHING
    2.
    发明申请
    SLURRY COMPOSITION FOR GST PHASE CHANGE MEMORY MATERIALS POLISHING 审中-公开
    用于消费品相变化记忆材料抛光的浆料组合物

    公开(公告)号：US20100130013A1

    公开(公告)日：2010-05-27

    申请号：US12622251

    申请日：2009-11-19

    申请人： Feng Q. Liu ,  Alain Duboust ,  Wen-Chiang Tu ,  Chenhao Ge ,  Kun Xu ,  Yuchun Wang ,  Yufei Chen

    发明人： Feng Q. Liu ,  Alain Duboust ,  Wen-Chiang Tu ,  Chenhao Ge ,  Kun Xu ,  Yuchun Wang ,  Yufei Chen

    IPC分类号： H01L21/306 ,  H01L21/304 ,  C09K13/06 ,  C11D3/20

    CPC分类号： C11D3/3947 ,  C09G1/02 ,  C09K3/1463 ,  C11D7/08 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1683

    摘要： A CMP method for polishing a phase change alloy on a substrate surface including positioning the substrate comprising a phase change alloy material on a platen containing a polishing pad and delivering a polishing slurry to the polishing pad. The polishing slurry includes colloidal particles with a particle size less than 60 nm, in an amount between 0.2% to about 10% by weight of slurry, a pH adjustor, a chelating agent, an oxidizing agent in an amount less than 1% by weight of slurry, and polyacrylic acid. The substrate on the platen is polished to remove a portion of the phase change alloy. A rinsing solution for rinsing the substrate on the platen includes deionized water and at least one component in the deionized water where the component selected from the group consisting of polyethylene imine, polyethylene glycol, polyacrylic amide, alcohol ethoxylates, polyacrylic acid, an azole containing compound, benzo-triazole, and combinations thereof.

    摘要翻译： 一种用于在衬底表面上抛光相变合金的CMP方法，包括将包含相变合金材料的衬底定位在包含抛光垫的压板上并将抛光浆料输送到抛光垫。 抛光浆料包括粒度小于60nm的胶体颗粒，其浆料重量为0.2％至约10％，pH调节剂，螯合剂，小于1重量％的氧化剂 的浆料和聚丙烯酸。 抛光台板上的基板以除去一部分相变合金。 用于冲洗台板上的基材的冲洗溶液包括去离子水和去离子水中的至少一种组分，其中选自聚乙烯亚胺，聚乙二醇，聚丙烯酰胺，醇乙氧基化物，聚丙烯酸，含唑化合物 ，苯并三唑及其组合。

    METHODS AND APPARATUS FOR CLEANING A SUBSTRATE EDGE USING CHEMICAL AND MECHANICAL POLISHING
    9.
    发明申请
    METHODS AND APPARATUS FOR CLEANING A SUBSTRATE EDGE USING CHEMICAL AND MECHANICAL POLISHING 审中-公开
    清洗使用化学和机械抛光的基板边缘的方法和装置

    公开(公告)号：US20080207093A1

    公开(公告)日：2008-08-28

    申请号：US12039418

    申请日：2008-02-28

    申请人： Sen-Hou Ko ,  Zhenhua Zhang ,  Yufei Chen ,  Wei-Yung Hsu

    发明人： Sen-Hou Ko ,  Zhenhua Zhang ,  Yufei Chen ,  Wei-Yung Hsu

    IPC分类号： B24B9/02 ,  B24B57/02

    CPC分类号： B24B9/065 ,  B24B57/02

    摘要： Methods and apparatus are provided for concurrently chemically and mechanically polishing a substrate edge. The invention includes a substrate support adapted to rotate a substrate; a polishing head adapted to contact an edge of the substrate, the polishing head including a first channel adapted to apply a first fluid to the edge of the substrate; a second channel adapted to direct a second fluid onto a major surface of the rotating substrate; and a third channel adapted to direct a third fluid at the major surface of the substrate and to prevent the second fluid from diluting the first fluid. Numerous other aspects are provided.

    摘要翻译： 提供了用于同时化学和机械抛光衬底边缘的方法和装置。 本发明包括适于旋转衬底的衬底支撑件; 抛光头，其适于接触所述基底的边缘，所述抛光头包括适于将第一流体施加到所述基底的边缘的第一通道; 第二通道，其适于将第二流体引导到所述旋转基板的主表面上; 以及第三通道，其适于在基底的主表面处引导第三流体并防止第二流体稀释第一流体。 提供了许多其他方面。

    Methods for reducing delamination during chemical mechanical polishing
    10.
    发明授权
    Methods for reducing delamination during chemical mechanical polishing 失效
    在化学机械抛光过程中减少分层的方法

    公开(公告)号：US07037174B2

    公开(公告)日：2006-05-02

    申请号：US10678906

    申请日：2003-10-03

    申请人： Yufei Chen ,  Lizhong Sun ,  Doohan Lee ,  Wei-Yung Hsu

    发明人： Yufei Chen ,  Lizhong Sun ,  Doohan Lee ,  Wei-Yung Hsu

    IPC分类号： B49D1/00

    CPC分类号： B24B37/042 ,  B24B49/006 ,  H01L21/02074 ,  H01L21/3212 ,  Y02P70/605

    摘要： Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material form thereon in a polishing apparatus having a rotational carrier head and a rotatable platen, wherein the substrate is disposed in the rotational carrier head and the platen has a polishing article disposed thereon, rotating the first carrier head at a first carrier head rotational rate and rotating a platen at a first platen rotational rate, contacting the substrate and the polishing article, accelerating the first carrier head rotational rate to a second carrier head rotational rate and accelerating the first platen rotational rate to a second platen rotational rate, and polishing the substrate at the second carrier head rotational rate and at the second platen rotational rate.

    摘要翻译： 提供了用于抛光衬底的方法和装置，其包括具有降低或最小衬底表面损伤和分层的导电和低k电介质材料。 一方面，提供了一种处理衬底的方法，包括在具有旋转载体头和可旋转压板的抛光装置中定位其上具有导电材料的衬底，其中衬底设置在旋转载体头部中，并且压板具有 设置在其上的抛光制品，以第一载体头旋转速率旋转第一载体头并以第一压板旋转速率旋转压板，使基板和抛光制品接触，将第一载体头旋转速率加速到第二载体头旋转 速度并将第一压板转速加速到第二压板旋转速率，并以第二承载头转速和第二压板旋转速率抛光衬底。