公开(公告)号：US09450153B2

公开(公告)日：2016-09-20

申请号：US14949554

申请日：2015-11-23

Applicant: Seoul Viosys Co., Ltd.

Inventor： Hyoung Jin Lim ,  Chan Seob Shin ,  Kyu Ho Lee ,  Tae Gyun Kim ,  Sung Won Tae

IPC: H01L33/42 ,  H01L33/22

CPC classification number: H01L33/38 ,  H01L33/22 ,  H01L33/42 ,  H01L2933/0016 ,  H01L2933/0091

Abstract: Disclosed herein are a light emitting diode including a plurality of protrusions including zinc oxide and a method for manufacturing the same. According to an exemplary embodiment of the present disclosure, the light emitting diode includes: a substrate; a nitride light emitting structure disposed on the substrate; and a transparent electrode layer disposed on the nitride light emitting structure, wherein the transparent electrode layer includes a plurality of protrusions, the plurality of protrusions each have a lower portion and an upper portion, and a side of the lower portion and a side of the upper portion have different gradients.

Abstract translation: 本文公开了包括多个包括氧化锌的突起的发光二极管及其制造方法。 根据本公开的示例性实施例，发光二极管包括：基板; 设置在所述基板上的氮化物发光结构; 以及设置在所述氮化物发光结构上的透明电极层，其中所述透明电极层包括多个突起，所述多个突起各自具有下部和上部，所述下部的一侧和 上部具有不同的梯度。

公开(公告)号：US11862455B2

公开(公告)日：2024-01-02

申请号：US18153205

申请日：2023-01-11

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Kyu Kim ,  Min Woo Kang ,  Se Hee Oh ,  Hyoung Jin Lim

IPC: H01L33/20 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L33/32

CPC classification number: H01L33/382 ,  H01L33/20 ,  H01L33/405 ,  H01L33/44 ,  H01L33/32

Abstract: A chip-scale package type light emitting diode includes a first conductivity type semiconductor layer, a mesa, a second conductivity type semiconductor layer, a transparent conductive oxide layer, a dielectric layer, a lower insulation layer, a first pad metal layer, and a second pad metal layer, an upper insulation layer. The upper insulation layer covers the first pad metal layer and the second pad metal layer, and includes a first opening exposing the first pad metal layer and a second opening exposing the second pad metal layer. The openings of the dielectric layer include openings that have different sizes from one another.

公开(公告)号：US11557696B2

公开(公告)日：2023-01-17

申请号：US17157600

申请日：2021-01-25

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Kyu Kim ,  Min Woo Kang ,  Se Hee Oh ,  Hyoung Jin Lim

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/20 ,  H01L33/40 ,  H01L33/44 ,  H01L33/32

Abstract: A chip-scale package type light emitting diode includes a first conductivity type semiconductor layer, a mesa, a second conductivity type semiconductor layer, a transparent conductive oxide layer, a dielectric layer, a lower insulation layer, a first pad metal layer, and a second pad metal layer, an upper insulation layer. The upper insulation layer covers the first pad metal layer and the second pad metal layer, and includes a first opening exposing the first pad metal layer and a second opening exposing the second pad metal layer. The openings of the dielectric layer include openings that have different sizes from one another.

公开(公告)号：US10593850B2

公开(公告)日：2020-03-17

申请号：US15868976

申请日：2018-01-11

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Hyeon Chae ,  Yeon Cheol Cho ,  Cun Bok Jeong ,  Hyoung Jin Lim

IPC: H01L33/62 ,  H01L33/36 ,  H01L33/38

Abstract: A method for manufacturing a light emitting diode package comprises: arranging a first solder and a second solder between a substrate and a light emitting diode; and subjecting the first solder and the second solder to heat treatment to bond the substrate and the light emitting diode. The heat treatment comprises: increasing the temperature of the first and second solders from room temperature to a temperature Tp; maintaining the temperature Tp; and lowering the temperature Tp. The heating step comprises: a first ramping step of increasing a temperature from room temperature to a temperature TA at a constant speed; a pre-heating step of increasing the temperature from the temperature TA to a temperature TB to impart fluidity to the first and second solders; and a second ramping step of increasing the temperature from the TB to TL at a constant speed.

公开(公告)号：US20170154921A1

公开(公告)日：2017-06-01

申请号：US15409306

申请日：2017-01-18

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Kyu Kim ,  So Ra Lee ,  Yeo Jin Yoon ,  Jae Kwon Kim ,  Joon Sup Lee ,  Min Woo Kang ,  Se Hee Oh ,  Hyun A Kim ,  Hyoung Jin Lim

IPC: H01L27/15 ,  H01L33/62 ,  H01L33/36

CPC classification number: H01L27/156 ,  H01L33/08 ,  H01L33/36 ,  H01L33/38 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L33/64 ,  H01L2224/16225 ,  H01L2224/32245 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2933/0016 ,  H01L2924/00012

Abstract: A light-emitting element includes a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode and a second contact electrode located on the light-emitting structure, and respectively making ohmic contact with the first conductive semiconductor layer and the second conductive semiconductor layer; an insulation layer for covering a part of the first contact electrode and the second contact electrode so as to insulate the first contact electrode and the second contact electrode; a first electrode pad and a second electrode pad electrically connected to each of the first contact electrode and the second contact electrode; and a radiation pad formed on the insulation layer, and radiating heat generated from the light-emitting structure.

公开(公告)号：US20170005231A1

公开(公告)日：2017-01-05

申请号：US15264420

申请日：2016-09-13

Applicant: Seoul Viosys Co., Ltd.

Inventor： Hyoung Jin Lim ,  Chan Seob Shin ,  Kyu Ho Lee ,  Tae Gyun Kim ,  Sung Won Tae

IPC: H01L33/38 ,  H01L33/42

CPC classification number: H01L33/38 ,  H01L33/22 ,  H01L33/42 ,  H01L2933/0016 ,  H01L2933/0091

Abstract: Disclosed herein are a light emitting diode including a plurality of protrusions including zinc oxide and a method for manufacturing the same. According to an exemplary embodiment of the present disclosure, the light emitting diode includes: a substrate; a nitride light emitting structure disposed on the substrate; and a transparent electrode layer disposed on the nitride light emitting structure, wherein the transparent electrode layer includes a plurality of protrusions, the plurality of protrusions each have a lower portion and an upper portion, and a side of the lower portion and a side of the upper portion have different gradients.

Abstract translation: 本文公开了包括多个包括氧化锌的突起的发光二极管及其制造方法。 根据本公开的示例性实施例，发光二极管包括：基板; 设置在所述基板上的氮化物发光结构; 以及设置在所述氮化物发光结构上的透明电极层，其中所述透明电极层包括多个突起，所述多个突起各自具有下部和上部，所述下部的一侧和 上部具有不同的梯度。