公开(公告)号：US20190019923A1

公开(公告)日：2019-01-17

申请号：US16125769

申请日：2018-09-10

Applicant: SEOUL VIOSYS CO., LTD

Inventor： Chi Hyun IN ,  Jun Yong PARK ,  Kyu Ho LEE ,  Dae Woong SUH ,  Jong Hyeon CHAE ,  Chang Hoon KIM ,  Sung Hyun LEE

IPC: H01L33/48 ,  H01L33/20 ,  H01L33/50 ,  H01L33/44 ,  H01L33/62

CPC classification number: H01L33/486 ,  H01L33/20 ,  H01L33/44 ,  H01L33/505 ,  H01L33/62 ,  H01L2224/16 ,  H01L2933/0033

Abstract: Disclosed herein are a light emitting diode package and a method of manufacturing the same. The light emitting diode package includes: a substrate, a light-emitting layer disposed on a surface of the substrate and including a first type semiconductor layer, an active layer, and a second type semiconductor layer, a first bump disposed on the first type semiconductor layer and a second bump disposed the second type semiconductor layer, a protective layer covering at least the light-emitting layer, and a first bump pad and a second bump pad disposed on the protective layer and connected to the first bump and the second bump, respectively.

公开(公告)号：US20250006869A1

公开(公告)日：2025-01-02

申请号：US18885554

申请日：2024-09-13

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Chi Hyun IN ,  Jun Yong PARK ,  Kyu Ho LEE ,  Dae Woong Suh ,  Jong Hyeon CHAE ,  Chang Hoon KIM ,  Sung Hyun LEE

IPC: H01L33/48 ,  H01L33/20 ,  H01L33/44 ,  H01L33/50 ,  H01L33/62

Abstract: A light emitting diode, including a first type semiconductor layer, an active layer, and a second type semiconductor layer; an ohmic contact layer disposed on the second type semiconductor layer; a first insulating layer disposed on the semiconductor structure and including a first opening overlapping the first type semiconductor layer and a second opening overlapping the ohmic contact layer; a first connection wiring disposed on the first insulating layer, the first connection wiring having a first portion and a second portion; and a second connection wiring disposed on the first insulating layer and spaced apart from the first connection wiring, the second connection wiring electrically connected to the second type semiconductor layer through the second opening. The second connection wiring surrounds at least a portion of the first portion of the first connection wiring in a plan view.

公开(公告)号：US20230395752A1

公开(公告)日：2023-12-07

申请号：US18230616

申请日：2023-08-04

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Ju Yong Park ,  Seong Gyu JANG ,  Kyu Ho LEE ,  Joon Hee

IPC: H01L33/38 ,  H01L33/62 ,  H01L33/00 ,  H01L33/24

CPC classification number: H01L33/38 ,  H01L33/24 ,  H01L33/00 ,  H01L33/62

Abstract: An ultraviolet light-emitting diode includes: a substrate; an n-type semiconductor layer disposed on the substrate; a mesa disposed on the n-type semiconductor layer and including an active layer and a p-type semiconductor layer; an n-ohmic contact layer contacting the n-type semiconductor layer; a p-ohmic contact layer contacting the p-type semiconductor layer; an n-bump electrically connected to the n-ohmic contact layer; and a p-bump electrically connected to the p-ohmic contact layer, wherein the mesa includes a plurality of branches, the n-ohmic contact layer surrounds the mesa and is disposed in a region between the branches, each of the n-bump and the p-bump covers an upper surface and a side surface of the mesa, and the p-bump covers at least two of the branches among the plurality of branches. Therefore, an optical output can be increased by reducing light loss, and a forward voltage can be lowered.

公开(公告)号：US20230155096A1

公开(公告)日：2023-05-18

申请号：US18097313

申请日：2023-01-16

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Tae Gyun KIM ,  June Sik KWAK ,  Kyu Ho LEE

IPC: H01L33/62 ,  H01L33/32 ,  H01L33/38

CPC classification number: H01L33/62 ,  H01L33/32 ,  H01L33/382

Abstract: A deep ultraviolet light-emitting diode is provided. A deep ultraviolet light-emitting diode according to one embodiment comprises: a substrate; an n-type semiconductor layer positioned on the substrate; a mesa which is disposed on the n-type semiconductor layer, comprises an active layer and a p-type semiconductor layer, and has a plurality of via-holes exposing the n-type semiconductor layer; n-ohmic contact layers contacting the n-type semiconductor layer in the via-holes; a p-ohmic contact layer contacting the p-type semiconductor layer; an n-pad metal layer electrically connected to the n-ohmic contact layers; a p-pad metal layer electrically connected to the p-ohmic contact layer; an n-bump electrically connected to the n-pad metal layer; and a p-bump electrically connected to the p-pad metal layer, wherein the p-pad metal layer is formed so as to surround the n-pad metal layer.

公开(公告)号：US20220367753A1

公开(公告)日：2022-11-17

申请号：US17743993

申请日：2022-05-13

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Tae Gyun KIM ,  Seon Min BAE ,  Seom Geun LEE ,  Kyu Ho LEE

IPC: H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/62

Abstract: A UV light emitting diode includes a substrate having a plurality of holes surrounded by a flat surface, a first conductivity type semiconductor layer disposed on the substrate, a second conductivity type semiconductor layer disposed on the first conductivity type semiconductor layer, an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer. A distance from the flat surface to the active layer is smaller than a distance from bottom surfaces of the plurality of holes to the active layer. The flat surface is in contact with the first conductivity type semiconductor layer.

公开(公告)号：US20210305459A1

公开(公告)日：2021-09-30

申请号：US17344691

申请日：2021-06-10

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Tae Gyun KIM ,  Kyu Ho LEE

IPC: H01L33/38 ,  H01L33/62 ,  H01L33/46

Abstract: A deep UV light emitting diode includes a substrate, an n-type semiconductor layer located on the substrate, a mesa disposed on the n-type semiconductor layer, and including an active layer and a p-type semiconductor layer, an n-ohmic contact layer in contact with the n-type semiconductor layer, a p-ohmic contact layer in contact with the p-type semiconductor layer, an n-bump electrically connected to the n-ohmic contact layer, and a p-bump electrically connected to the p-ohmic contact layer. The mesa includes a plurality of vias exposing a first conductivity type semiconductor layer.

公开(公告)号：US20200227595A1

公开(公告)日：2020-07-16

申请号：US16830191

申请日：2020-03-25

Applicant: Seoul Viosys Co., Ltd.

Inventor： Seong Kyu JANG ,  Ju Yong PARK ,  Kyu Ho LEE ,  Joon Hee LEE

IPC: H01L33/40 ,  H01L33/38 ,  H01L33/62

Abstract: A semiconductor light emitting device includes a first semiconductor layer, an active layer disposed on the first semiconductor layer to emit ultraviolet light, a second semiconductor layer disposed on the active layer, and a first electrode disposed on the first semiconductor layer and being in Ohmic contact with a portion of the first semiconductor layer, the first electrode including a contact electrode including aluminum (Al) and at least one other material and having a first region adjacent to the first semiconductor layer and a second region, with each region having an Al composition ratio defined by the amount of Al relative to the amount of the at least one other material. The Al composition ratio of the first region is greater than the Al composition ratio of the second region, and a metal layer disposed on the contact electrode.