公开(公告)号：US20070019517A1

公开(公告)日：2007-01-25

申请号：US11523017

申请日：2006-09-19

申请人： Takanori Okuda ,  Takashi Yokoyama

发明人： Takanori Okuda ,  Takashi Yokoyama

IPC分类号： G11B7/00

CPC分类号： G11B7/005 ,  G11B7/0045 ,  G11B7/13

摘要： A two-stage amplifier of a first-stage amplifier 21 and second-stage amplifiers 22 and 23 is provided. A writing mode and reproducing modes are switched in the first-stage amplifier 21 by switching a parallel circuit of a feedback capacitor Cf1w and a feedback resistor Rf1w and a parallel circuit of a feedback capacitor Cf1r and a feedback resistor Rf1r. The second-stage amplifier 23 is provided with feedback resistors Rf22 and Rf23 that are connected to each other in parallel. The feedback resistor Rf23 is connected in the feedback loop by a switch transistor QSW only when reproducing a high-reflective disk. This enables an amplifier gain to be suitably set for each of writing, low-reflective disk reproducing, and high-reflective disk reproducing. As a result, desirable reproducing characteristics can be obtained for the low-reflective disk while accommodating high-speed writing with a large laser power.

公开(公告)号：US07133346B2

公开(公告)日：2006-11-07

申请号：US10294573

申请日：2002-11-15

申请人： Takanori Okuda ,  Takashi Yokoyama

发明人： Takanori Okuda ,  Takashi Yokoyama

IPC分类号： G11B7/00 ,  H01L31/00

CPC分类号： G11B7/005 ,  G11B7/0045 ,  G11B7/13

摘要： A two-stage amplifier of a first-stage amplifier 21 and second-stage amplifiers 22 and 23 is provided. A writing mode and reproducing modes are switched in the first-stage amplifier 21 by switching a parallel circuit of a feedback capacitor Cf1w and a feedback resistor Rf1w and a parallel circuit of a feedback capacitor Cf1r and a feedback resistor Rf1r. The second-stage amplifier 23 is provided with feedback resistors Rf22 and Rf23 that are connected to each other in parallel. The feedback resistor Rf23 is connected in the feedback loop by a switch transistor QSW only when reproducing a high-reflective disk. This enables an amplifier gain to be suitably set for each of writing, low-reflective disk reproducing, and high-reflective disk reproducing. As a result, desirable reproducing characteristics can be obtained for the low-reflective disk while accommodating high-speed writing with a large laser power.

摘要翻译： 提供了第一级放大器21和第二级放大器22和23的两级放大器。 通过切换反馈电容器Cf 1 w和反馈电阻器Rf 1 w的并联电路以及反馈电容器Cf 1 r的并联电路和反馈电阻器Rf的并联电路，在第一级放大器21中切换写入模式和再现模式 1 r。 第二级放大器23设置有并联连接的反馈电阻器Rf 22和Rf 23。 只有在再现高反射盘时，反馈电阻Rf 23才被开关晶体管QSW连接在反馈回路中。 这使得能够针对写入，低反射盘再现和高反射盘再现中的每一个适当地设置放大器增益。 结果，对于低反射盘可以获得期望的再现特性，同时以大的激光功率容纳高速写入。

公开(公告)号：US07079513B2

公开(公告)日：2006-07-18

申请号：US10894060

申请日：2004-07-20

申请人： Kenichi Sakamoto ,  Tsutomu Kusaki ,  Masaru Murakami ,  Takashi Yokoyama

发明人： Kenichi Sakamoto ,  Tsutomu Kusaki ,  Masaru Murakami ,  Takashi Yokoyama

IPC分类号： H04Q7/00 ,  H04L12/28

CPC分类号： H04B7/022 ,  H04W36/18

摘要： A communication system includes a control unit, a switch and a diversity hand-over processing unit connected to the control unit and the switch for receiving both a first communication signal received from a radio base station which outputs the hand-over instruction, and a second communication signal received from another radio base station to which the communication signal will be hand-over so as to output one of the first and second communication signals to the associated interface circuit. The diversity hand-over processing unit transmits the communication signal received through the radio base station from the mobile station on the reception side for communication to both the interface circuit associated with the radio base station as a source of hand-over and the interface circuit associated with the radio base station as a destination of hand-over.

摘要翻译： 通信系统包括：控制单元，开关和分配移交处理单元，连接到控制单元和开关，用于接收从输出切换指令的无线电基站接收的第一通信信号;以及第二 从另一无​​线电基站接收到通信信号的通信信号，通信信号将被切换到其中，以将第一和第二通信信号中的一个输出到相关联的接口电路。 分集处理单元将从无线基站接收到的通信信号从接收侧的移动台发送到与无线基站相关联的接口电路作为切换源，并且接口电路相关联 以无线电基站为切换目的地。

公开(公告)号：US20050035399A1

公开(公告)日：2005-02-17

申请号：US10912751

申请日：2004-08-04

申请人： Fujio Masuoka ,  Shinji Horii ,  Takuji Tanigami ,  Takashi Yokoyama ,  Noboru Takeuchi

发明人： Fujio Masuoka ,  Shinji Horii ,  Takuji Tanigami ,  Takashi Yokoyama ,  Noboru Takeuchi

IPC分类号： H01L27/108 ,  H01L21/265 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/06 ,  H01L29/423 ,  H01L29/78 ,  H01L29/786 ,  H01L29/788 ,  H01L29/792

CPC分类号： H01L21/26586 ,  H01L27/115 ,  H01L27/11556 ,  H01L29/0623 ,  H01L29/0646 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/40114 ,  H01L29/40117 ,  H01L29/42384 ,  H01L29/42392 ,  H01L29/66484 ,  H01L29/66666 ,  H01L29/66742 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7828 ,  H01L29/78642 ,  H01L29/78648 ,  H01L29/78696

摘要： A semiconductor device comprising a memory cell which includes: a pillar-shaped semiconductor layer of a first conductive type formed on a semiconductor substrate; source and drain diffusion layers of a second conductive type formed in upper and lower portions of the pillar-shaped semiconductor layer; a semiconductor layer of the second conductive type or a cavity formed inside the pillar-shaped semiconductor layer; and a gate electrode formed on a side face of the pillar-shaped semiconductor layer via a gate insulating film, or a control gate electrode formed on the side face of the pillar-shaped semiconductor layer via a charge accumulation layer.

摘要翻译： 一种半导体器件，包括存储单元，其包括：形成在半导体衬底上的第一导电类型的柱状半导体层; 在柱状半导体层的上部和下部形成的第二导电类型的源极和漏极扩散层; 第二导电类型的半导体层或形成在柱状半导体层内部的空腔; 以及经由栅极绝缘膜形成在柱状半导体层的侧面上的栅电极，或者经由电荷累积层形成在柱状半导体层的侧面上的控制栅电极。

公开(公告)号：US20050032320A1

公开(公告)日：2005-02-10

申请号：US10910992

申请日：2004-08-04

申请人： Takashi Yokoyama

发明人： Takashi Yokoyama

IPC分类号： H01L21/768 ,  H01L21/30 ,  H01L21/31 ,  H01L21/322 ,  H01L21/336 ,  H01L21/8234 ,  H01L23/522 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L21/3003 ,  H01L21/823481 ,  H01L29/7833

摘要： A method for manufacturing a semiconductor device is provided, which is consisting of the steps of: forming a transistor on a surface region of a semiconductor substrate which is isolated by an insulating isolation region; forming an inter-layer insulation film provide with a hydrogen supplying path that reaches said isolation region on said semiconductor substrate on which said transistor is formed; and supplying hydrogen in said semiconductor substrate from said hydrogen supplying path through said isolation region by carrying out heat treatment. And also the semiconductor device is provided manufactured thereby.

摘要翻译： 提供了一种制造半导体器件的方法，其包括以下步骤：在由绝缘隔离区隔离的半导体衬底的表面区域上形成晶体管; 形成层间绝缘膜，提供到达形成所述晶体管的所述半导体衬底上的所述隔离区域的氢供应路径; 以及通过进行热处理从所述氢气供应路径通过所述隔离区域在所述半导体衬底中供应氢。 并且由此制造半导体器件。

公开(公告)号：US06523521B2

公开(公告)日：2003-02-25

申请号：US09741158

申请日：2000-12-21

申请人： Takashi Yokoyama ,  Hideaki Andou

发明人： Takashi Yokoyama ,  Hideaki Andou

IPC分类号： F02D902

CPC分类号： F02M1/10 ,  F02M3/06

摘要： A hot water type first idle control device includes a heating chamber through which cooling water for an engine is allowed to flow, a wax case heated by the heating chamber, and a device housing in which the wax case is accommodated and retained. In the hot water type first idle control device, the heating chamber is integrally defined in the device housing to adjoin the wax case with a partition wall interposed therebetween for separating the heating chamber from the inside of the device housing. Thus, it is possible to effectively heat the wax case by hot water, while preventing the entering of the hot water into the device housing.

摘要翻译： 热水型第一怠速控制装置包括：允许发动机的冷却水流动的加热室，由加热室加热的蜡壳;以及容纳和保持蜡壳的装置壳体。 在热水型第一怠速控制装置中，加热室一体地限定在装置外壳中，与蜡盒相邻，并具有插入其间的隔壁，用于将加热室与装置壳体的内部分离。 因此，可以通过热水有效地加热蜡壳，同时防止热水进入装置壳体。

公开(公告)号：US06344411B1

公开(公告)日：2002-02-05

申请号：US09197682

申请日：1998-11-23

申请人： Yoshiaki Yamada ,  Takashi Yokoyama

发明人： Yoshiaki Yamada ,  Takashi Yokoyama

IPC分类号： H01L2144

CPC分类号： H01L21/76849 ,  C23C14/0641 ,  C23C14/541 ,  H01L21/2855 ,  H01L21/28568 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/7685 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76864 ,  H01L21/76877

摘要： A sputtering method of depositing a titanium nitride film on a titanium film in contact with a silicon at a bottom of a contact hole is provided, wherein the sputtering method is carried out at a temperature of the silicon region of not less than 450° C., so that the titanium nitride film has a compressive stress of not higher than 5×109 dyne/cm2 whereby the titanium film has such a high stability as preventing any crack upon changing the compressive stress to a tensile stress by a heat treatment.

摘要翻译： 提供了在接触孔底部与硅接触的钛膜上沉积氮化钛膜的溅射方法，其中溅射方法在硅区域的温度不低于450℃下进行。 ，使得氮化钛膜的压缩应力不高于5×10 9达因/ cm 2，由此钛膜具有如通过热处理将压缩应力改变为拉伸应力时防止任何裂纹的高稳定性。

公开(公告)号：US06331238B1

公开(公告)日：2001-12-18

申请号：US09602061

申请日：2000-06-23

申请人： Takashi Yokoyama ,  Masakazu Baba

发明人： Takashi Yokoyama ,  Masakazu Baba

IPC分类号： C25D502

CPC分类号： B32B27/20 ,  Y10T428/24917 ,  Y10T428/24926 ,  Y10T428/265 ,  Y10T428/31678

摘要： There is provided a method of patterning a substrate with an atomic mask having a mask substrate and first atoms adsorbed on the mask substrate, the first atoms forming a mask pattern having a one-atomic thickness, including the steps, in sequence, of (a) depositing adatoms over a surface of a substrate to be patterned, the adatoms having low reactivity with second atoms of which the substrate is composed, and (b) putting the atomic mask close to the substrate in such a distance that the first atoms make a chemical bond with the adatoms, so that adatoms located nearest to the first atoms are desorbed out of the substrate to form a pattern on the substrate, the pattern being defined as an area where none of the adatoms exists. In accordance with the above mentioned method, it is possible to form a pattern on the sub-nanometer or nanometer order with high accuracy and in a short period of time, and it is also possible to repeatedly form the same pattern by using the atomic mask.

摘要翻译： 提供了一种利用具有掩模衬底的原子掩模和吸附在掩模衬底上的第一原子的原子掩模图案化衬底的方法，第一原子形成具有一个原子厚度的掩模图案，其包括以下步骤：（a ）在待图案化的衬底的表面上沉积吸附原子，所述原子与所述衬底的第二原子具有低反应性，和（b）将所述原子掩模放置在所述衬底附近，使得所述第一原子形成 与吸附原子的化学键，使得位于最靠近第一原子的吸附原子从衬底中解吸出来，以在衬底上形成图案，该图案被定义为不存在吸收原子的区域。 根据上述方法，可以以高精度和短时间在亚纳米或纳米级上形成图案，并且还可以通过使用原子掩模重复形成相同的图案 。

公开(公告)号：US06287956B1

公开(公告)日：2001-09-11

申请号：US09066115

申请日：1998-04-23

申请人： Takashi Yokoyama ,  Yoshiaki Yamada ,  Koji Kishimoto

发明人： Takashi Yokoyama ,  Yoshiaki Yamada ,  Koji Kishimoto

IPC分类号： H01L214763

摘要： A multilevel interconnecting structure includes a plurality of interconnecting layers formed on a semiconductor substrate, a fluorine-doped oxide film for burying portions between the interconnecting layers, and an oxide film formed on the fluorine-doped oxide film, having a planarized surface, and not containing fluorine. A method of forming the multilevel interconnecting structure is also disclosed.

公开(公告)号：US06263204B1

公开(公告)日：2001-07-17

申请号：US09602670

申请日：2000-06-26

申请人： Tsutomu Kusaki ,  Kenichi Sakamoto ,  Masaru Murakami ,  Takashi Yokoyama

发明人： Tsutomu Kusaki ,  Kenichi Sakamoto ,  Masaru Murakami ,  Takashi Yokoyama

IPC分类号： H04Q722

CPC分类号： H04W36/18 ,  H04W36/02 ,  H04W36/26 ,  H04W36/30

摘要： In a mobile communication system having an ATM-processed transfer path, a non-instantaneous interrupt handover can be realized. In a mobile communication network including an ATM-processed transfer path, when a mobile station is moved between cells during communication, frames are received to be identified by a mobile switching center. The frames contain the same data received from both base stations covering the cell range at asynchronous timing different from each other. A selection is made of header information with the lowest error rate from the header information of these frames. The frames are connected at instructed timing. Also, the frames to be transmitted to a plurality of base stations are duplicated, and then transmission timing is specified from these header information. These duplicated frames are transmitted at the specified transmission timing, so that the non-instantaneous interrupt handover is carried out.

摘要翻译： 在具有ATM处理传输路径的移动通信系统中，可以实现非瞬时中断切换。 在包括ATM处理的传输路径的移动通信网络中，当移动站在通信期间在小区之间移动时，帧被接收以被移动交换中心识别。 这些帧包含从两个基站接收到的相同的数据，这两个基站在异步定时不同的情况下覆盖单元范围。 从这些帧的标题信息中选择具有最低错误率的报头信息。 帧在指定的时间连接。 此外，要发送到多个基站的帧被复制，然后从这些头信息指定发送定时。 这些复制帧在指定的发送定时被发送，从而执行非瞬时中断切换。