公开(公告)号：US09605356B2

公开(公告)日：2017-03-28

申请号：US14111597

申请日：2012-04-04

申请人： Shuichi Miyao ,  Junichi Okada ,  Shigeyoshi Netsu

发明人： Shuichi Miyao ,  Junichi Okada ,  Shigeyoshi Netsu

IPC分类号： C30B13/00 ,  C30B29/06 ,  C01B33/035 ,  C30B35/00 ,  C30B15/00 ,  G01N23/207

CPC分类号： C30B13/00 ,  C01B33/035 ,  C30B15/00 ,  C30B29/06 ,  C30B35/007 ,  G01N23/207

摘要： Plate-like samples each having as a principal plane thereof a cross section perpendicular to the long axis direction of a polycrystalline silicon rod grown by the deposition using a chemical vapor deposition method are sampled; an X-ray diffraction measurement is performed omnidirectionally in the plane of each of the plate-like samples thus sampled; and when none of the plate-like samples has any X-ray diffraction peak with a diffraction intensity deviating from the average value ±2×standard deviation (μ±2σ) found for any one of the Miller indices , , and , the polycrystalline silicon rod is selected as the raw material for use in the production of single-crystalline silicon. The use of such a polycrystalline silicon raw material suppresses the local occurrence of the portions remaining unmelted, and can contribute to the stable production of single-crystalline silicon.

公开(公告)号：US08793853B2

公开(公告)日：2014-08-05

申请号：US13502015

申请日：2010-07-27

申请人： Shigeyoshi Netsu ,  Shinichi Kurotani ,  Kyoji Oguro ,  Fumitaka Kume

发明人： Shigeyoshi Netsu ,  Shinichi Kurotani ,  Kyoji Oguro ,  Fumitaka Kume

IPC分类号： B25B1/00

CPC分类号： C01B33/035 ,  Y10T29/53796 ,  Y10T29/53961

摘要： One end side of a core wire holder 20 is formed into a shape of a truncated cone and has an inclined surface. In the end portion, an opening 22 is provided, and a hollow portion 21 is formed, a silicon core wire 5 being inserted into the hollow portion 21 and held therein. On the surface of the silicon core wire 5, polycrystalline silicon 6 is vapor deposited by the Siemens method to produce a polycrystalline silicon rod. On the inclined surface of the truncated cone portion in the vicinity of the opening 22, as a thermal insulating layer, annular slits 23a to 23c are formed from an outer circumferential surface in the vicinity of the opening toward the hollow portion 21. The annular slit acts as a thermal insulating portion, and suppresses escape of the heat to heat the one end side of the core wire holder 20.

摘要翻译： 芯线保持架20的一端形成为截头圆锥形，具有倾斜面。 在端部设有开口部22，形成中空部21，插入中空部21并保持在其中的硅芯线5。 在硅芯线5的表面上，通过西门子方法气相沉积多晶硅6以制造多晶硅棒。 在开口部22附近的截锥体的倾斜面上，作为绝热层，从开口部的朝向中空部21的外周面形成环状狭缝23a〜23c。环状狭缝 用作绝热部分，并且抑制热量逸出以加热芯线保持器20的一端侧。

公开(公告)号：US20130102092A1

公开(公告)日：2013-04-25

申请号：US13808404

申请日：2011-07-04

申请人： Shigeyoshi Netsu ,  Fumitaka Kume ,  Junichi Okada

发明人： Shigeyoshi Netsu ,  Fumitaka Kume ,  Junichi Okada

IPC分类号： H01L21/66

CPC分类号： H01L22/12 ,  C01B33/035 ,  G01M7/08 ,  G01N29/045 ,  G01N29/12 ,  G01N29/4418 ,  G01N29/4454 ,  G01N29/46 ,  G01N2291/0234 ,  G01N2291/2626 ,  G01N2291/2697 ,  H01L2224/16 ,  H01L2924/0002 ,  H01L2924/00

摘要： The length of the polycrystalline silicon rod (100) is measured with a tape measure, then the polycrystalline silicon rod (100) is hit with a hammer (120), and this hammering sound is recorded in a recorder (140) through a microphone (130). Then, an acoustic signal of the hammering sound is subjected to a fast Fourier transform and a frequency distribution is displayed. Furthermore, a peak frequency f is detected which shows the largest sound volume in the frequency distribution obtained after the fast Fourier transform. The relationship between the length (L) of the polycrystalline silicon rod and the peak frequency f is obtained, and the firmness of the polycrystalline silicon rod is determined on the basis of whether or not the peak frequency f is in a range of f≧1,471/L (region A).

摘要翻译： 用卷尺测量多晶硅棒（100）的长度，然后用锤子（120）击打多晶硅棒（100），并将该锤击声通过麦克风（140）记录在记录器（140）中 130）。 然后，对锤击声的声信号进行快速傅里叶变换，并显示频率分布。 此外，检测出在快速傅里叶变换之后获得的频率分布中的最大音量的峰值频率f。 获得多晶硅棒的长度（L）与峰值频率f之间的关系，并且基于峰值频率f是否在f> =的范围内来确定多晶硅棒的坚固度， 1,471 / L（A区）。

公开(公告)号：US20120237429A1

公开(公告)日：2012-09-20

申请号：US13496002

申请日：2010-07-09

申请人： Shigeyoshi Netsu ,  Kyoji Oguro ,  Takaaki Shimizu ,  Yasushi Kurosawa ,  Fumitaka Kume

发明人： Shigeyoshi Netsu ,  Kyoji Oguro ,  Takaaki Shimizu ,  Yasushi Kurosawa ,  Fumitaka Kume

IPC分类号： B01J19/00 ,  C01B33/027

CPC分类号： C01B33/035 ,  C22C1/02 ,  Y02P20/124

摘要： An inner wall 11 of a reactor 10 has a two-layer structure: an anticorrosive layer 11a comprising an alloy material having high anticorrosiveness is provided on the inner side of the reactor contacting a corrosive process gas, and a heat conductive layer 11b for efficiently conducting the heat within the reactor 10 from an inner wall surface to a coolant flow passage 13 is provided on the outer side of the reactor (outer-wall side). The anticorrosive layer 11a comprises an alloy material having a composition for which a value R, defined by R=[Cr]+[Ni]−1.5 [Si], is not less than 40% wherein [Cr] is a mass content (% by mass) of chromium (Cr), [Ni] is a mass content (% by mass) of nickel (Ni), and [Si] is a mass content (% by mass) of silicon (Si).

摘要翻译： 反应器10的内壁11具有两层结构：在与腐蚀性工艺气体接触的反应器的内侧设置有包括具有高防锈性的合金材料的防腐蚀层11a和用于有效导电的导热层11b 在反应器10的外侧（外壁侧）设置有从内壁面到冷却剂流路13的反应器10内的热量。 防腐层11a包括具有由R = [Cr] + [Ni] -1.5 [Si]定义的值R为40％以上的组成的合金材料，其中[Cr]为质量含量（％ （Cr），[Ni]为镍（Ni）的质量含量（质量％），[Si]为硅（Si）的质量含量（质量％）。

公开(公告)号：US07203559B2

公开(公告)日：2007-04-10

申请号：US10502389

申请日：2003-01-22

申请人： Tatsuo Ito ,  Shigeyoshi Netsu ,  Masashi Ichikawa ,  Nobuhiro Ohara

发明人： Tatsuo Ito ,  Shigeyoshi Netsu ,  Masashi Ichikawa ,  Nobuhiro Ohara

IPC分类号： G06F19/00

CPC分类号： G06Q10/06 ,  G05B19/418 ,  G05B2219/32024 ,  G06Q10/087 ,  Y02P90/02 ,  Y02P90/18

摘要： The present invention provides a method for manufacturing a semiconductor wafer comprising steps of obtaining information of a device manufacturing process, selecting a wafer manufacturing process corresponding thereto, and manufacturing a semiconductor wafer according to the selected wafer manufacturing process. The present invention also provides a method for receiving an order for manufacture of a semiconductor wafer comprising a step of connecting a device maker with a customer computer in a wafer maker, a step wherein the customer computer receives information of a device manufacturing process and a step of selecting a wafer manufacturing process corresponding thereto, and provides a system for receiving an order for manufacture of a semiconductor wafer comprising a client terminal in a device maker and a customer computer in a wafer maker wherein information of a device manufacturing process is inputted into the client terminal and is sent, the customer computer receives the information of the device manufacturing process, and a wafer manufacturing process corresponding thereto is selected. Thereby, there can be provided a method for manufacturing a semiconductor wafer, a method for receiving an order for manufacture of a semiconductor wafer, and a system for receiving an order wherein a wafer suitable for a device manufacturing process in a device maker is supplied.

摘要翻译： 本发明提供一种制造半导体晶片的方法，包括以下步骤：根据所选择的晶片制造工艺获得器件制造工艺的信息，选择与之对应的晶片制造工艺，以及制造半导体晶片。 本发明还提供了一种用于接收制造半导体晶片的顺序的方法，包括在晶片制造机中将设备制造商与客户计算机连接的步骤，其中客户计算机接收设备制造过程的信息和步骤 选择与之对应的晶片制造工艺，并且提供一种用于接收制造半导体晶圆的系统的系统，该半导体晶片包括在晶片制造商中的设备制造商和客户计算机中的客户终端，其中将器件制造过程的信息输入到 客户终端被发送，客户计算机接收设备制造过程的信息，并且选择与其对应的晶片制造过程。 因此，可以提供一种用于制造半导体晶片的方法，用于接收半导体晶片的制造顺序的方法，以及用于接收其中提供适合于器件制造商中的器件制造工艺的晶片的顺序的系统。

公开(公告)号：US5409770A

公开(公告)日：1995-04-25

申请号：US35608

申请日：1993-03-23

申请人： Shigeyoshi Netsu ,  Kihachiro Watanabe ,  Makoto Tsukada

发明人： Shigeyoshi Netsu ,  Kihachiro Watanabe ,  Makoto Tsukada

IPC分类号： B24B37/04 ,  B24B37/30 ,  H01L21/304 ,  H01L21/00

CPC分类号： B24B37/30 ,  Y10T428/249961 ,  Y10T428/249975 ,  Y10T428/249979

摘要： An elastic foamed sheet is disclosed which is usable as waxless polishing backing pads for wafers and capable of producing mirror polish wafers excelling in flatness.This elastic foamed sheet possesses at least a foamed layer 2 and is characterized by the fact that a plurality of bubbles 4 in the foamed layer 2 meet the following conditions:(1) that the bubbles are slender discrete bubbles erected parallelly to one another and dispersed at a substantially equal pitch in the direction of width of the foamed layer 2 and the bubbles 4 are substantially equal in size, shape, and position of formation in the direction of thickness of the foamed layer 2,(2) that center lines of the bubbles 4 in the direction of length thereof are parallel to the direction of thickness of the foamed layer 2, and(3) that the diameters of the bubbles 4 are minimized in the terminal part of the foamed layer 2 on one surface side thereof and gradually increased in the direction from the one surface side to the other surface side of foamed layer 2 until the bubbles form openings 6 thereof in the surface of the foamed layer 2.

摘要翻译： 公开了一种弹性发泡片，其可用作晶片的无蜡抛光衬垫，并且能够生产出优异的平面度的镜面抛光晶片。 该弹性发泡片材至少具有发泡层2，其特征在于，泡沫层2中的多个气泡4满足以下条件：（1）气泡是彼此平行并分散的细长的离散气泡 在发泡层2的宽度方向上基本相等的间距和气泡4在发泡层2的厚度方向上的尺寸，形状和形成位置基本相等，（2）中心线 在其长度方向上的气泡4与发泡层2的厚度方向平行，（3）在发泡层2的一个表面侧的末端部分中气泡4的直径最小化， 在发泡层2的一个表面侧到另一个表面侧的方向上增加，直到泡沫在发泡层2的表面中形成开口6。

公开(公告)号：US20130302528A1

公开(公告)日：2013-11-14

申请号：US13979789

申请日：2011-09-20

申请人： Yasushi Kurosawa ,  Shigeyoshi Netsu

发明人： Yasushi Kurosawa ,  Shigeyoshi Netsu

IPC分类号： C23C16/24

CPC分类号： C23C16/45563 ,  C01B33/035 ,  C23C16/24

摘要： Raw material gas supply nozzles are arranged within a virtual concentric circle having its center at the center of a disk-like base plate (having an area half as large as an area of the base plate). Raw material gas is ejected at a flow velocity of 150 m/sec or more into a bell jar from the gas supply nozzles. In addition to one gas supply nozzle provided in a center portion of the base plate, three gas supply nozzles can be arranged at the vertex positions of a regular triangle inscribed in a circumscribed circle having its center at the gas supply nozzle in the center portion. With the gas supply nozzles so arranged, a smooth circulating flow is formed within a reactor.

摘要翻译： 原料气体供给喷嘴配置在其中心位于盘状基板的中心的虚拟同心圆（面积为基板的面积的一半以上）。 原料气体以150m / sec以上的流速从气体供给喷嘴喷射到钟罩中。 除了设置在基板的中心部分中的一个气体供应喷嘴之外，三个气体供应喷嘴可以布置在其中心部分处于气体供应喷嘴的中心的外接圆的正三角形的顶点位置处。 在气体供给喷嘴如此布置的情况下，在反应器内形成平滑的循环流。

公开(公告)号：US20130089489A1

公开(公告)日：2013-04-11

申请号：US13704767

申请日：2011-03-07

申请人： Yasushi Kurosawa ,  Kyoji Oguro ,  Shinichi Kurotani ,  Shigeyoshi Netsu

发明人： Yasushi Kurosawa ,  Kyoji Oguro ,  Shinichi Kurotani ,  Shigeyoshi Netsu

IPC分类号： B08B3/10 ,  F26B5/12 ,  C01B33/035

CPC分类号： F26B5/042 ,  B08B3/04 ,  B08B3/10 ,  C01B33/035 ,  C23C16/4407 ,  F26B5/12 ,  F28G13/00

摘要： A bell jar includes a metallic bell jar (1), and a metallic base plate (2) on which the bell jar (1) is placed, and packing (3) seals an inside of a container. To the base plate (2), a pressure gauge (4), a gas introduction line (5), and a gas discharge line (6) are connected so as to allow monitoring of internal pressure of the bell jar (1) and introduction and discharge of a gas. A vacuum pump (7) is provided in a path of the gas discharge line (6), and the vacuum pump (7) reduces internal pressure of the bell jar so as to be lower than vapor pressure of water. The vacuum pump (7) reduces the internal pressure of the bell jar so as to be lower than vapor pressure of water, thereby efficiently removing moisture, and completing drying of the bell jar in a short time.

公开(公告)号：US20120222619A1

公开(公告)日：2012-09-06

申请号：US13508826

申请日：2010-10-22

申请人： Shigeyoshi Netsu ,  Shinichi Kurotani ,  Kyoji Oguro ,  Fumitaka Kume ,  Masaru Hirahara

发明人： Shigeyoshi Netsu ,  Shinichi Kurotani ,  Kyoji Oguro ,  Fumitaka Kume ,  Masaru Hirahara

IPC分类号： C23C16/50

CPC分类号： C23C16/458 ,  C01B32/225 ,  C01B33/035 ,  C23C16/24

摘要： The upper electrode 31 has a hole 35 extending from an upper surface 33 to a lower surface 34, a bolt 36 is inserted from the upper surface 33 of the upper electrode 31 into the hole 35, and secured in a lower electrode 32 by a screw. A gap 51 between an inside of the hole 35 and a straight body portion of the bolt 36 allows the upper electrode 31 to slide in all directions in a placement surface (upper surface of the lower electrode 32 in contact with the lower surface 34 of the upper electrode 31 in FIG. 2) that is a contact surface with an upper surface of the lower electrode 32, thereby providing an effect of preventing occurrence of a crack or a break in a U rod that can be expanded and contracted in all directions during a vapor phase growth process.

摘要翻译： 上电极31具有从上表面33延伸到下表面34的孔35，将螺栓36从上电极31的上表面33插入孔35中，并通过螺钉固定在下电极32中 。 孔35的内部和螺栓36的直体部之间的间隙51允许上电极31在放置表面（在下电极32的下表面34的上表面）的所有方向上滑动 作为与下部电极32的上表面的接触面的图2中的上部电极31），由此提供防止U棒的发生龟裂或断裂的效果，U棒能够在各个方向上膨胀和收缩 气相生长过程。

公开(公告)号：US20120207662A1

公开(公告)日：2012-08-16

申请号：US13496060

申请日：2010-07-20

申请人： Shigeyoshi Netsu ,  Kyoji Oguro ,  Takaaki Shimizu ,  Yasushi Kurosawa ,  Fumitaka Kume

发明人： Shigeyoshi Netsu ,  Kyoji Oguro ,  Takaaki Shimizu ,  Yasushi Kurosawa ,  Fumitaka Kume

IPC分类号： C01B33/027 ,  B01J19/00

CPC分类号： H01L21/02595 ,  B01J19/02 ,  B01J2219/0236 ,  C01B33/035 ,  C23C16/24 ,  C23C16/4411 ,  C23C16/463 ,  C23C16/52 ,  H01L21/02532 ,  H01L21/02636 ,  Y02P20/124 ,  Y02P20/129

摘要： The present invention provides a technique by which heat can be efficiently recovered from a coolant used to cool a reactor, and contamination with dopant impurities from an inner wall of a reactor when polycrystalline silicon is deposited within the reactor can be reduced to produce high-purity polycrystalline silicon. With the use of hot water 15 having a temperature higher than a standard boiling point as a coolant fed to the reactor 10, the temperature of the reactor inner wall is kept at a temperature of not more than 370° C. Additionally, the pressure of the hot water 15 to be recovered is reduced by a pressure control section provided in a coolant tank 20 to generate steam. Thereby, a part of the hot water is taken out as steam to the outside, and reused as a heating source for another application.

摘要翻译： 本发明提供了一种技术，通过该技术可以降低用于冷却反应器的冷却剂的热量，并且可以减少在反应器内沉积多晶硅时来自反应器的内壁的掺杂剂杂质的污染，以产生高纯度 多晶硅。 通过使用温度高于标准沸点的热水15作为供给到反应器10的冷却剂，反应器内壁的温度保持在不高于370℃的温度。另外， 通过设置在冷却剂罐20中的压力控制部来减少要回收的热水15，以产生蒸汽。 因此，一部分热水作为蒸汽被取出到外部，并且再次用作另一种应用的加热源。