摘要:
A piezoelectric thin-film resonator includes a substrate, a lower electrode provided on the substrate, a piezoelectric film provided on the substrate and the lower electrode, an upper electrode provided on the piezoelectric film, and an additional pattern, a cavity being formed between the lower electrode and the substrate in a resonance portion in which the lower electrode and the upper electrode face each other through the piezoelectric film, the additional pattern being provided in a position that is on the lower electrode and includes an interface between the resonance portion and a non-resonance portion.
摘要:
A piezoelectric thin film resonator of the present has a substrate 1, an intermediate layer 7 disposed on the substrate 1 and is formed of an insulator, a lower electrode 3 disposed on the intermediate layer 7, a piezoelectric film 4 disposed on the lower electrode 3, and an upper electrode 5 disposed on a position facing the lower electrode 3 with the piezoelectric film 4 interposed therebetween, in which, in a resonant region 8 where the lower electrode 3 and the upper electrode 5 face each other, a space 6 is formed in the substrate 1 and the intermediate layer 7 or between the lower electrode 3 and the intermediate layer 7 and the region of the space 6 is included in the resonant region 8. With the structure, the dissipation of the vibrational energy to the substrate from the resonance portion can be suppressed, thereby improving the quality factor.
摘要:
A filter has a plurality of piezoelectric thin film resonators formed by sandwiching a piezoelectric film with a lower electrode disposed on a substrate and an upper electrode. Each of the piezoelectric thin film resonators has an electrode region formed with the upper electrode and the lower electrode overlapping each other, whose outline includes a curve. Among the plural piezoelectric thin film resonators, the piezoelectric thin film resonators in the opposing electrode regions of the adjacent piezoelectric thin film resonators are shaped to have outlines complementary to each other. With the filter, influences caused by transverse mode undesired wave of the piezoelectric thin film resonators can be suppressed. Therefore, miniaturization can be achieved without sacrificing the mechanical strength of electrodes having hollow structures.
摘要:
A piezoelectric thin film resonator of the present has a substrate 1, an intermediate layer 7 disposed on the substrate 1 and is formed of an insulator, a lower electrode 3 disposed on the intermediate layer 7, a piezoelectric film 4 disposed on the lower electrode 3, and an upper electrode 5 disposed on a position facing the lower electrode 3 with the piezoelectric film 4 interposed therebetween, in which, in a resonant region 8 where the lower electrode 3 and the upper electrode 5 face each other, a space 6 is formed in the substrate 1 and the intermediate layer 7 or between the lower electrode 3 and the intermediate layer 7 and the region of the space 6 is included in the resonant region 8. With the structure, the dissipation of the vibrational energy to the substrate from the resonance portion can be suppressed, thereby improving the quality factor.
摘要:
A method of producing a piezoelectric thin film resonator is provided. A sacrificial layer is formed on a part of the piezoelectric film. The sacrificial layer is patterned, and thereafter an upper electrode is formed on the piezoelectric layer. The method further includes removing the sacrificial layer formed on the piezoelectric layer; and patterning the piezoelectric film. In the step of removing the sacrificial layer, the sacrificial layer is removed such that at least a portion of the periphery of the upper electrode has a reversely tapered shape that reflects the tapered portion of the sacrificial layer, and in the step of patterning the piezoelectric film, the piezoelectric film is removed such that a lower end of the reversely tapered periphery of the upper electrode is placed so as to coincide with or to be in the vicinity of an end portion of the patterned piezoelectric film.
摘要:
A filter includes: a first filter unit includes: a series resonators connected in series to each other between a first input terminal and a first output terminal; a parallel resonators each having one end connected to one terminal of each of the series resonators; and a common inductance having one end connected to the other ends of the parallel resonators and the other end connected to a ground terminal, and a second filter unit includes: a series resonators connected in series to each other between a second input terminal and a second output terminal; a parallel resonators each having one end connected to one terminal of each of the series resonators; and a common inductance having one end connected to the other ends of the parallel resonators and the other end connected to the ground terminal.
摘要:
An acoustic wave filter having excellent steepness is provided without adding any exterior components or any new manufacturing steps. A plurality of filters (10-1) each having a first resonator (2a-1) placed in a serial arm and having a resonance frequency frs and an anti-resonance frequency fas, and a second resonator (4a-1) placed in a parallel arm and having a resonance frequency frp and an anti-resonance frequency fap are provided on a same substrate, where the resonance frequency frs of the first resonator is higher than the resonance frequency frp of the second resonator; the anti-resonance frequency fas of the first resonator is higher than the anti-resonance frequency fap of the second resonator; and the filters (10-1) are connected in multiple stages. At least one of the filters (10-1) connected in multiple stages has a third resonator (6-1) having a resonance frequency frp and an anti-resonance frequency fap. The third resonator (6-1) is formed on the substrate and connected to the serial arm in parallel with respect to the first resonator (2a-1).
摘要:
A piezoelectric thin film resonator includes a substrate, a lower electrode formed on the substrate, a piezoelectric film formed on the lower electrode, and an upper electrode formed on the piezoelectric film, the lower electrode and the upper electrode opposing each other through the piezoelectric film to form an opposing region, the opposing region including a space at a boundary of the opposing region. The space extends from an innerside to an outer side of the opposing region and is formed in or on the piezoelectric film.
摘要:
A method of manufacturing an elastic wave device is provided with a lamination step of forming, on a substrate (1), a plurality of elastic wave devices, each of which includes a lower electrode (2), a piezoelectric film (3), and an upper electrode (4); a measuring step for measuring the operation frequency distribution of the elastic wave devices on the substrate (1); and an adjusting step for forming an adjusting region, in which the thickness of the elastic wave device is different from the thicknesses of other portions in a resonance portion of each elastic wave device, corresponding with the distribution of the operation frequencies. The adjusting region is formed so that the size of the area of the adjusting region of the resonator portion of each elastic wave device is different in accordance with the operation frequency distribution that is measured. Thus, the frequency characteristics of the elastic wave devices are easily adjusted by a small number of steps.
摘要:
A resonator includes a substrate, a lower electrode, a piezoelectric film provided on the lower electrode, and an upper electrode provided on the piezoelectric film. The lower electrode includes a first film provided on the substrate, and a second film that is provided on the first film and has a specific gravity greater than that of the first film. The piezoelectric film is provided on the second film. The upper electrode includes a third film provided on the piezoelectric film, and a fourth film provided on the third film, the third film having a specific gravity greater than that of the fourth film. The third film is thicker than the second film.