公开(公告)号：US20080203574A1

公开(公告)日：2008-08-28

申请号：US12037439

申请日：2008-02-26

申请人： Yasushi KOBAYASHI ,  Yoshihiro NAKATA ,  Shirou OZAKI

发明人： Yasushi KOBAYASHI ,  Yoshihiro NAKATA ,  Shirou OZAKI

IPC分类号： H01L23/52 ,  H01L21/4763 ,  C07F7/08

CPC分类号： H01L21/31695 ,  C09D183/04 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76829 ,  H01L21/76834 ,  H01L2924/0002 ,  C08L2666/54 ,  H01L2924/00

摘要： To provide an insulating film material that can be advantageously used for forming an insulating film having a low dielectric constant and excellent resistance to damage, such as etching resistance and resistance to liquid reagents, a multilayer interconnection structure in which a parasitic capacitance between the interconnections can be reduced, efficient methods for manufacturing the multilayer interconnection structure, and an efficient method for manufacturing a semiconductor device with a high speed and reliability. The insulating film material contains at least a silicon compound having a steric structure represented by Structural Formula (1) below. where, R1, R2, R3, and R4 may be the same or different and at least one of them represents a functional group containing any of a hydrocarbon and an unsaturated hydrocarbon.

摘要翻译： 为了提供一种绝缘膜材料，其可以有利地用于形成具有低介电常数和优异的耐腐蚀性（如抗蚀刻性和耐液体试剂）的绝缘膜，其中互连之间的寄生电容可以 减少用于制造多层互连结构的有效方法，以及用于制造具有高速度和可靠性的半导体器件的有效方法。 绝缘膜材料至少含有具有由下述结构式（1）表示的空间结构的硅化合物。 其中R 1，R 2，R 3和R 4可以相同或不同，并且在 其中至少一个表示含有任何烃和不饱和烃的官能团。

公开(公告)号：US20080057717A1

公开(公告)日：2008-03-06

申请号：US11844023

申请日：2007-08-23

申请人： Tamotsu OWADA ,  Hirofumi WATATANI ,  Shirou OZAKI ,  Hisaya SAKAI ,  Kenichi YANAI ,  Naoki OHARA ,  Tadahiro IMADA ,  Yoshihiro NAKATA

发明人： Tamotsu OWADA ,  Hirofumi WATATANI ,  Shirou OZAKI ,  Hisaya SAKAI ,  Kenichi YANAI ,  Naoki OHARA ,  Tadahiro IMADA ,  Yoshihiro NAKATA

IPC分类号： H01L21/311 ,  H01L21/4763

CPC分类号： H01L21/3105 ,  H01L21/02063 ,  H01L21/31116 ,  H01L21/76808 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826

摘要： A semiconductor device manufacturing method that includes depositing a first insulating film on a semiconductor substrate, etching a part of the first insulating film, and performing UV irradiation to the first insulating film.

摘要翻译： 一种半导体器件制造方法，包括在半导体衬底上沉积第一绝缘膜，蚀刻所述第一绝缘膜的一部分，并对所述第一绝缘膜进行UV照射。