公开(公告)号：US20080057717A1

公开(公告)日：2008-03-06

申请号：US11844023

申请日：2007-08-23

申请人： Tamotsu OWADA ,  Hirofumi WATATANI ,  Shirou OZAKI ,  Hisaya SAKAI ,  Kenichi YANAI ,  Naoki OHARA ,  Tadahiro IMADA ,  Yoshihiro NAKATA

发明人： Tamotsu OWADA ,  Hirofumi WATATANI ,  Shirou OZAKI ,  Hisaya SAKAI ,  Kenichi YANAI ,  Naoki OHARA ,  Tadahiro IMADA ,  Yoshihiro NAKATA

IPC分类号： H01L21/311 ,  H01L21/4763

CPC分类号： H01L21/3105 ,  H01L21/02063 ,  H01L21/31116 ,  H01L21/76808 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826

摘要： A semiconductor device manufacturing method that includes depositing a first insulating film on a semiconductor substrate, etching a part of the first insulating film, and performing UV irradiation to the first insulating film.

摘要翻译： 一种半导体器件制造方法，包括在半导体衬底上沉积第一绝缘膜，蚀刻所述第一绝缘膜的一部分，并对所述第一绝缘膜进行UV照射。

公开(公告)号：US20080233734A1

公开(公告)日：2008-09-25

申请号：US12051193

申请日：2008-03-19

申请人： Naoki OHARA ,  Hirofumi WATATANI ,  Tamotsu OWADA ,  Kenichi YANAI

发明人： Naoki OHARA ,  Hirofumi WATATANI ,  Tamotsu OWADA ,  Kenichi YANAI

IPC分类号： H01L21/4763

CPC分类号： H01L21/76867 ,  H01L21/02112 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/3121 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76849 ,  H01L21/76862

摘要： A method of manufacturing a semiconductor device includes forming a first insulating film over a semiconductor substrate, forming a trench in the first insulating film, forming a metal interconnect in the trench, exposing the surface of the metal interconnect to a silicon-containing gas, performing a plasma treatment of the surface of the metal interconnect after exposing to the silicon-containing gas, and forming a second insulating film over the metal interconnect.

摘要翻译： 一种制造半导体器件的方法包括在半导体衬底上形成第一绝缘膜，在第一绝缘膜中形成沟槽，在沟槽中形成金属互连，将金属互连的表面暴露于含硅气体，执行 在暴露于含硅气体之后对金属互连表面进行等离子体处理，并在金属互连上形成第二绝缘膜。

公开(公告)号：US20070066086A1

公开(公告)日：2007-03-22

申请号：US11550917

申请日：2006-10-19

申请人： Yasuyoshi HYODO ,  Nobuo MATSUKI ,  Masashi YAMAGUCHI ,  Atsuki FUKAZAWA ,  Naoki OHARA ,  Yijun LIU

发明人： Yasuyoshi HYODO ,  Nobuo MATSUKI ,  Masashi YAMAGUCHI ,  Atsuki FUKAZAWA ,  Naoki OHARA ,  Yijun LIU

IPC分类号： H01L21/469

CPC分类号： H01L21/02274 ,  H01L21/02164 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801

摘要： A method for forming a silicon-containing insulation film on a substrate by plasma polymerization includes: introducing a reaction gas comprising (i) a source gas consisting of a silicon-containing hydrocarbon linear compound containing at least one vinyl group (Si-vinyl compound), and (ii) an additive gas, into a reaction chamber where a substrate is placed; and applying radio-frequency power to the gas to cause plasma polymerization, thereby depositing an insulation film on the substrate.

摘要翻译： 通过等离子体聚合在基板上形成含硅绝缘膜的方法包括：引入反应气体，该反应气体包含（i）由含有至少一个乙烯基的含硅烃线性化合物（Si-乙烯基化合物）组成的源气体， ，和（ii）添加气体，放入放置基板的反应室中; 并向气体施加射频电力以引起等离子体聚合，由此在基板上沉积绝缘膜。

公开(公告)号：US20070111540A1

公开(公告)日：2007-05-17

申请号：US11550930

申请日：2006-10-19

申请人： Yasuyoshi HYODO ,  Nobuo MATSUKI ,  Masashi YAMAGUCHI ,  Atsuki FUKAZAWA ,  Naoki OHARA ,  Yijun LIU

发明人： Yasuyoshi HYODO ,  Nobuo MATSUKI ,  Masashi YAMAGUCHI ,  Atsuki FUKAZAWA ,  Naoki OHARA ,  Yijun LIU

IPC分类号： H01L21/469

CPC分类号： H01L21/02274 ,  H01L21/02164 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801

摘要： A method for forming a silicon-containing insulation film on a substrate by plasma polymerization includes: introducing a reaction gas comprising (i) a source gas comprising a silicon-containing hydrocarbon cyclic compound containing at least one vinyl group (Si-vinyl compound), and (ii) an additive gas, into a reaction chamber where a substrate is placed; and applying radio-frequency power to the gas to cause plasma polymerization, thereby depositing an insulation film on the substrate.

摘要翻译： 通过等离子体聚合在基板上形成含硅绝缘膜的方法包括：引入反应气体，该反应气体包含（i）包含含有至少一个乙烯基（Si-乙烯基化合物）的含硅烃环状化合物的源气体， 和（ii）添加气体，放入放置基板的反应室中; 并向气体施加射频电力以引起等离子体聚合，由此在基板上沉积绝缘膜。