公开(公告)号：US08775484B2

公开(公告)日：2014-07-08

申请号：US12894725

申请日：2010-09-30

申请人： Kazuyuki Sakai ,  Yasushi Kobayashi ,  Yuuki Tada ,  Tomoyuki Kobayashi

发明人： Kazuyuki Sakai ,  Yasushi Kobayashi ,  Yuuki Tada ,  Tomoyuki Kobayashi

IPC分类号： G06F17/30

CPC分类号： H04L43/0817 ,  G06F11/3476 ,  G06F11/3495 ,  H04L41/0213 ,  H04L43/12 ,  H04L67/125

摘要： The present invention, an apparatus includes a data management apparatus comprising, a determination unit configured to determine whether an analyzing apparatus is in a communicable state when a configuration information data indicating a status of a server apparatus is received from a data collection apparatus, the data analyzing apparatus analyzing the configuration information data, an unprocessed information storage unit configured to store the received configuration information data once it is determined that data analyzing apparatus is in an incommunicable state, an integrating unit configured to integrate a plurality of configuration information data stored in the storage unit in accordance with a predetermined condition; and a notifying unit configured to send, to the analyzing apparatus, a message indicating that the data management apparatus is storing the configuration information data integrated by the integrating unit once it is determined that the data analyzing apparatus is in a communicable state.

摘要翻译： 本发明是一种数据管理装置，包括：确定单元，被配置为当从数据收集装置接收到指示服务器装置的状态的配置信息数据时，判断分析装置是否处于通信状态，所述数据 分析装置分析配置信息数据，未处理信息存储单元，被配置为一旦确定数据分析装置处于不可通信状态，就存储接收到的配置信息数据;整合单元，被配置为将存储在所述配置信息数据中的多个配置信息数据 存储单元; 以及通知单元，被配置为一旦确定数据分析装置处于可通信状态，则向分析装置发送指示数据管理装置正在存储由积分单元集成的配置信息数据的消息。

公开(公告)号：US08716209B2

公开(公告)日：2014-05-06

申请号：US12560193

申请日：2009-09-15

申请人： Yasushi Kobayashi ,  Kouta Yoshikawa ,  Yoshihiro Nakata ,  Tadahiro Imada ,  Shirou Ozaki

发明人： Yasushi Kobayashi ,  Kouta Yoshikawa ,  Yoshihiro Nakata ,  Tadahiro Imada ,  Shirou Ozaki

IPC分类号： H01L21/306 ,  C11D11/00 ,  H01L21/3105

CPC分类号： C11D11/0047 ,  C11D3/042 ,  C11D3/044 ,  C11D3/162 ,  C11D3/2075 ,  C11D3/30 ,  C11D3/3742 ,  C11D7/08 ,  C11D7/265 ,  C11D7/3209 ,  H01L21/02063 ,  H01L21/3105 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76826 ,  H01L24/05 ,  H01L2224/02166 ,  H01L2924/14 ,  H01L2924/00

摘要： The invention provides an agent for post-etch treating a silicon dielectric film, including: at least one nitrogen-containing substance selected from the group consisting of ammonium bases and amine compounds; an acid; and at least one silicon-containing compound containing silicon, carbon and hydrogen. According to the present invention, it becomes possible to suppress an increase in the dielectric constant of a silicon dielectric film caused by etching.

摘要翻译： 本发明提供了一种用于蚀刻后处理硅介电膜的试剂，包括：至少一种选自铵基和胺化合物的含氮物质; 酸; 和含有硅，碳和氢的至少一种含硅化合物。 根据本发明，可以抑制由蚀刻引起的硅电介质膜的介电常数的增加。

公开(公告)号：US08580907B2

公开(公告)日：2013-11-12

申请号：US12648804

申请日：2009-12-29

申请人： Yasushi Kobayashi ,  Yoshihiro Nakata ,  Shirou Ozaki

发明人： Yasushi Kobayashi ,  Yoshihiro Nakata ,  Shirou Ozaki

IPC分类号： C08G77/60

CPC分类号： H01L21/3121 ,  C08G77/60 ,  C09D183/16 ,  H01B3/46 ,  H01L21/02123 ,  H01L21/02211 ,  H01L21/02282 ,  H01L21/4857 ,  H01L21/76807 ,  H01L21/76829 ,  H01L24/02 ,  H01L24/03 ,  H01L24/11 ,  H01L2224/02319 ,  H01L2224/02333 ,  H01L2224/02381 ,  H01L2224/0401 ,  H01L2224/13111 ,  H01L2224/94 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01052 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15787 ,  H05K3/4676 ,  H01L2224/11 ,  H01L2924/00014 ,  H01L2924/00

摘要： An insulating film material, which contains a polycarbosilane compound expressed by the following structural formula 1: where R1 may be the same or different to each other in the unit repeated “n” times, and each represents C1-4 hydrocarbon or aromatic hydrocarbon; R2 may be the same or different to each other in the unit repeated “n” times, and each represents C1-4 hydrocarbon or aromatic hydrocarbon; n is an integer of 5 to 5,000.

摘要翻译： 一种绝缘膜材料，其含有由以下结构式1表示的聚碳硅烷化合物：其中R 1可以在重复“n”次的单元中彼此相同或不同，并且各自表示C1-4烃或芳族烃; R2可以在重复“n”次的单位中彼此相同或不同，并且各自表示C1-4烃或芳香烃; n为5〜5000的整数。

公开(公告)号：US08390099B2

公开(公告)日：2013-03-05

申请号：US12862140

申请日：2010-08-24

申请人： Shirou Ozaki ,  Yoshihiro Nakata ,  Tadahiro Imada ,  Yasushi Kobayashi

发明人： Shirou Ozaki ,  Yoshihiro Nakata ,  Tadahiro Imada ,  Yasushi Kobayashi

IPC分类号： H01L23/58

CPC分类号： H01L23/5329 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/3121 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76825 ,  H01L21/76829 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/31663 ,  H01L2924/00

摘要： An interconnection substrate including: a first insulating film made of a silicon compound, an adhesion enhancing layer formed on the first insulating film, and a second insulting film made of a silicon compound and formed on the adhesion enhancing layer, wherein the first insulating film and the second insulating film are combined together with a component having a structure represented by General Formula (1) described below: Si—CXHY—Si  General Formula (1) where y is equal to 2x and is an even integer.

摘要翻译： 一种互连基板，包括：由硅化合物制成的第一绝缘膜，形成在第一绝缘膜上的粘合增强层和形成在粘合增强层上的由硅化合物制成的第二绝缘膜，其中第一绝缘膜和 第二绝缘膜与具有下述通式（1）所示结构的成分组合在一起：Si-CXHY-Si通式（1），其中y等于2×并且是偶数整数。

公开(公告)号：US20120181070A1

公开(公告)日：2012-07-19

申请号：US13431127

申请日：2012-03-27

申请人： Tsuyoshi Kanki ,  Yoshihiro Nakata ,  Yasushi Kobayashi

发明人： Tsuyoshi Kanki ,  Yoshihiro Nakata ,  Yasushi Kobayashi

IPC分类号： H05K1/09 ,  B05D3/00 ,  B05D5/12

CPC分类号： H01L21/76877 ,  H01L21/02068 ,  H01L21/02071 ,  H01L21/02074 ,  H01L21/288 ,  H01L21/321 ,  H01L21/76834 ,  H01L21/76841 ,  H01L21/76852 ,  H01L21/76874 ,  H01L21/76883 ,  H01L21/76885 ,  H01L23/53238 ,  H01L2924/00 ,  H01L2924/0002 ,  H05K3/24

摘要： After a copper interconnection is formed above a substrate, a surface of the copper interconnection is activated by performing acid cleaning. Thereafter, the substrate is immersed in a BTA (Benzo triazole) aqueous solution to form a protection film covering the surface of the copper interconnection. At this time, Cu—N—R bonds (R is an organic group) are formed in grain boundary portions in the surface of the copper interconnection. Thereafter, the protection film is removed by performing alkaline cleaning. The Cu—N—R bonds remain in the grain boundary portions in the surface of the copper interconnection even after the protection film is removed. Subsequently, the surface of the copper interconnection is subjected to an activation process, and a barrier layer is formed thereafter by electroless-plating the surface of the copper interconnection with NiP or CoWP.

摘要翻译： 在基板上形成铜互连之后，通过进行酸清洗来激活铜互连的表面。 此后，将基板浸入BTA（苯并三唑）水溶液中以形成覆盖铜互连表面的保护膜。 此时，在铜互连表面的晶界部分中形成Cu-N-R键（R为有机基团）。 此后，通过进行碱性清洗除去保护膜。 即使在保护膜被去除之后，Cu-N-R键也保留在铜互连表面的晶界部分中。 随后，对铜互连的表面进行激活处理，然后通过用NiP或CoWP对铜互连的表面进行无电镀来形成阻挡层。

公开(公告)号：US20120054324A1

公开(公告)日：2012-03-01

申请号：US13094269

申请日：2011-04-26

申请人： Yuuki TADA ,  Yasushi Kobayashi ,  Kazuyuki Sakai ,  Kazuki Takahashi

发明人： Yuuki TADA ,  Yasushi Kobayashi ,  Kazuyuki Sakai ,  Kazuki Takahashi

IPC分类号： G06F15/173

CPC分类号： H04L12/66

摘要： A configuration information collection unit 1502 and a transaction collection unit 1503 collect a transaction as the configuration information about an IT system and communication data, and stores them in a CMDB 1504. A multiplexed application detection unit 1501 detects as a candidate for a multiplexed application the software of applications multiplexed by evaluating whether or not the application names of the software of applications deployed to a target to be monitored on the IT system match each other. Then, it detects a multiplexed application by evaluating whether or not one or more of evaluation items of a subnet in which a candidate for a multiplexed application is performed, transaction context as the data relating to the names of an applications performed before and after the candidate for a multiplexed application, and transaction information as the transmission/reception data of the candidate for a multiplexed application match each other.

摘要翻译： 配置信息收集单元1502和交易收集单元1503收集交易作为关于IT系统和通信数据的配置信息，并将其存储在CMDB 1504中。多路复用应用检测单元1501检测多路复用应用的候选 通过评估部署到IT系统上要监视的目标的应用软件的应用程序名称是否相互匹配来复用应用软件。 然后，通过评价是否执行了多路复用应用的候选的子网的评估项目中的一个或多个，检测多路复用的应用程序，作为与候选者之前和之后执行的应用的名称有关的数据的事务上下文 并且作为复用应用的候选者的发送/接收数据的交易信息彼此匹配。

公开(公告)号：US20110163377A1

公开(公告)日：2011-07-07

申请号：US13050496

申请日：2011-03-17

申请人： Yasushi KOBAYASHI ,  Manabu Imahashi

发明人： Yasushi KOBAYASHI ,  Manabu Imahashi

IPC分类号： H01L29/78

CPC分类号： H01L29/0878 ,  H01L29/0847 ,  H01L29/1045 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/7816 ,  H01L29/7835

摘要： A semiconductor device includes: an n-type first well diffusion layer; an n-type second well diffusion layer; a p-type source diffusion layer; a p-type third well diffusion layer; a p-type drain diffusion layer; a gate insulating film; a gate electrode; a device isolation insulating film; and a buffer layer. The buffer layer is formed between the first well diffusion layer and the third well diffusion layer to be in contact with an end of the third well diffusion layer opposing the source diffusion layer, and extends from immediately below the gate insulating film to a position deeper than a peak of curvature of impurity concentration distribution of the third well diffusion layer. The buffer layer has an impurity concentration lower than an impurity concentration in the third well diffusion layer.

摘要翻译： 半导体器件包括：n型第一阱扩散层; n型第二阱扩散层; p型源极扩散层; p型第三阱扩散层; p型漏极扩散层; 栅极绝缘膜; 栅电极; 器件隔离绝缘膜; 和缓冲层。 缓冲层形成在第一阱扩散层和第三阱扩散层之间，以与第三阱扩散层的与源极扩散层相对的端部接触，并且从栅绝缘膜的正下方延伸到比第 第三阱扩散层的杂质浓度分布的曲率峰值。 缓冲层的杂质浓度低于第三阱扩散层中的杂质浓度。

公开(公告)号：US20090267144A1

公开(公告)日：2009-10-29

申请号：US12424119

申请日：2009-04-15

申请人： Yasushi KOBAYASHI ,  Manabu Imahashi

发明人： Yasushi KOBAYASHI ,  Manabu Imahashi

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/0878 ,  H01L29/0847 ,  H01L29/1045 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/7816 ,  H01L29/7835

摘要： A semiconductor device includes: an n-type first well diffusion layer; an n-type second well diffusion layer; a p-type source diffusion layer; a p-type third well diffusion layer; a p-type drain diffusion layer; a gate insulating film; a gate electrode; a device isolation insulating film; and a buffer layer. The buffer layer is formed between the first well diffusion layer and the third well diffusion layer to be in contact with an end of the third well diffusion layer opposing the source diffusion layer, and extends from immediately below the gate insulating film to a position deeper than a peak of curvature of impurity concentration distribution of the third well diffusion layer. The buffer layer has an impurity concentration lower than an impurity concentration in the third well diffusion layer.

摘要翻译： 半导体器件包括：n型第一阱扩散层; n型第二阱扩散层; p型源极扩散层; p型第三阱扩散层; p型漏极扩散层; 栅极绝缘膜; 栅电极; 器件隔离绝缘膜; 和缓冲层。 缓冲层形成在第一阱扩散层和第三阱扩散层之间，以与第三阱扩散层的与源极扩散层相对的端部接触，并且从栅绝缘膜的正下方延伸到比第 第三阱扩散层的杂质浓度分布的曲率峰值。 缓冲层的杂质浓度低于第三阱扩散层中的杂质浓度。

公开(公告)号：US07489617B2

公开(公告)日：2009-02-10

申请号：US11489484

申请日：2006-07-20

申请人： Hiroyuki Yamasaki ,  Yasushi Kobayashi ,  Manami Kuiseko

发明人： Hiroyuki Yamasaki ,  Yasushi Kobayashi ,  Manami Kuiseko

IPC分类号： G11B7/00

CPC分类号： G11B7/1387 ,  G11B7/1359 ,  G11B7/1362 ,  G11B7/1384

摘要： An optical head which has a prism with an incident section, an internal reflective surface and an emergent surface, and an optical head device which employs the optical head. Light emitted from a light source is incident to the prism through the incident section, reflects at least once on the internal reflective surface and is converged in the vicinity of the emergent surface. Then, the light effuses through the emergent surface as near field light.

摘要翻译： 具有入射部分的棱镜，内部反射表面和出射表面的光学头，以及使用该光学头的光学头装置。 从光源发射的光通过入射部入射到棱镜，至少在内反射面上反射一次并会聚到出射面附近。 然后，光通过出射表面流过近场光。

公开(公告)号：US07337047B2

公开(公告)日：2008-02-26

申请号：US10882223

申请日：2004-07-02

申请人： Hiroshi Ueno ,  Yasushi Kobayashi ,  Noritaka Yamada ,  Yukihisa Miwa

发明人： Hiroshi Ueno ,  Yasushi Kobayashi ,  Noritaka Yamada ,  Yukihisa Miwa

IPC分类号： B60T7/12 ,  G06F19/00

CPC分类号： B60T8/17558 ,  B60G2800/0124 ,  B60G2800/922 ,  B60T8/17554 ,  B60T8/243 ,  B60T2230/03

摘要： The inventive vehicle behavior control device employs a novel control strategy, suppressing deterioration of a vehicle behavior which would be induced during control processes, and being useful especially for correcting or inhibiting excessive deterioration of a vehicle behavior such as when a risk of rolling-over is detected. The device firstly judges if a possibility of rolling-over of the vehicle is high and calculates a target braking control amount for reducing the possibility of rolling-over in accordance with the result of the judgment of a possibility of rolling-over of the vehicle, where the target control amount when the possibility of rolling-over is high is set higher than when the possibility is low. Then, under control of the inventive control device, wheel braking force is controlled based upon the target braking control amount. After the starting of control of the wheel braking force, however, increasing and decreasing gradients of wheel braking force is restricted when a high possibility of rolling-over is judged.

摘要翻译： 本发明的车辆行为控制装置采用新颖的控制策略，抑制在控制过程中将引起的车辆行为的恶化，并且特别用于校正或抑制车辆行为的过度恶化，例如当翻转的风险是 检测到。 该装置首先判断车辆翻转的可能性是否高，并且根据判定车辆翻转的可能性的结果来计算目标制动控制量，以减少翻转的可能性， 当翻转的可能性高时的目标控制量设定为高于可能性低的目标控制量。 然后，在本发明的控制装置的控制下，基于目标制动控制量控制车轮制动力。 然而，在开始控制车轮制动力之后，当判断出滚动的可能性高时，限制了车轮制动力的增加和减小的梯度。