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公开(公告)号：US20120326315A1
公开(公告)日：2012-12-27
申请号：US13605020
申请日：2012-09-06
IPC分类号： H01L23/52
CPC分类号： H01L23/53238 , H01L21/2855 , H01L21/76805 , H01L21/76844 , H01L21/76846 , H01L21/76865 , H01L21/76873 , H01L23/5226 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device has forming, in a dielectric film, a first opening and a second opening located in the first opening, forming a first metal film containing a first metal over a whole surface, etching the first metal film at a bottom of the second opening using a sputtering process and forming a second metal film containing a second metal over the whole surface, and burying a conductive material in the second opening and the first opening.
摘要翻译： 制造半导体器件的方法在电介质膜中形成位于第一开口中的第一开口和第二开口，在整个表面上形成含有第一金属的第一金属膜，在底部蚀刻第一金属膜 的第二开口，并且在整个表面上形成含有第二金属的第二金属膜，并且在第二开口和第一开口中埋入导电材料。
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2.发明申请SILICON OXYCARBIDE, GROWTH METHOD OF SILICON OXYCARBIDE LAYER, SEMICONDUCTOR DEVICE AND MANUFACTURE METHOD FOR SEMICONDUCTOR DEVICE 审中-公开硅氧化物，硅氧烷层的生长方法，半导体器件和半导体器件的制造方法公开(公告)号：US20120252227A1
公开(公告)日：2012-10-04
申请号：US13493244
申请日：2012-06-11
IPC分类号： H01L21/31
CPC分类号： H01L21/02227 , C23C16/30 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/02315 , H01L21/0234 , H01L21/31633 , H01L21/76801 , H01L21/76808 , H01L21/76826 , H01L21/76832 , H01L21/76834
摘要： A method of manufacturing a semiconductor device includes the steps of: preparing an underlying structure having a silicon carbide layer covering a copper wiring, and growing silicon oxycarbide on the underlying structure by vapor deposition using, as source gas, tetramethylcyclotetrasiloxane, carbon dioxide gas and oxygen gas, a flow rate of said oxygen gas being at most 3% of a flow rate of the carbon dioxide gas. The surface of the silicon carbide layer of the underlying structure may be treated with a plasma of weak oxidizing gas which contains oxygen and has a molecular weight larger than that of O2 to bring the surface more hydrophilic. Film peel-off and cracks in the interlayer insulating layer decrease.
摘要翻译： 一种制造半导体器件的方法包括以下步骤：制备具有覆盖铜布线的碳化硅层的下面的结构，并且通过气相沉积作为原料气体四甲基环四硅氧烷，二氧化碳气体和氧气生长碳氢化合物 所述氧气的流量为二氧化碳气体流量的3％以下。 下面结构的碳化硅层的表面可以用含有氧的弱氧化气体的等离子体处理，其分子量大于O 2的分子量，使表面更亲水。 膜剥离和层间绝缘层中的裂纹减少。
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公开(公告)号：US08105935B2
公开(公告)日：2012-01-31
申请号：US12051193
申请日：2008-03-19
申请人： Naoki Ohara , Hirofumi Watatani , Tamotsu Owada , Kenichi Yanai
发明人： Naoki Ohara , Hirofumi Watatani , Tamotsu Owada , Kenichi Yanai
IPC分类号： H01L21/4763
CPC分类号： H01L21/76867 , H01L21/02112 , H01L21/02126 , H01L21/02167 , H01L21/0217 , H01L21/3121 , H01L21/76834 , H01L21/76835 , H01L21/76849 , H01L21/76862
摘要： A method of manufacturing a semiconductor device includes forming a first insulating film over a semiconductor substrate, forming a trench in the first insulating film, forming a metal interconnect in the trench, exposing the surface of the metal interconnect to a silicon-containing gas, performing a plasma treatment of the surface of the metal interconnect after exposing to the silicon-containing gas, and forming a second insulating film over the metal interconnect.
摘要翻译： 一种制造半导体器件的方法包括在半导体衬底上形成第一绝缘膜，在第一绝缘膜中形成沟槽，在沟槽中形成金属互连，将金属互连的表面暴露于含硅气体，执行 在暴露于含硅气体之后对金属互连表面进行等离子体处理，并在金属互连上形成第二绝缘膜。
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4.发明申请Semiconductor device having device characteristics improved by straining surface of active region and its manufacture method 有权具有通过有源区域的表面变形而改善了器件特性的半导体器件及其制造方法公开(公告)号：US20100144117A1
公开(公告)日：2010-06-10
申请号：US12708519
申请日：2010-02-18
申请人： Sadahiro Kishii , Hirofumi Watatani , Masanori Terahara , Ryo Tanabe , Kaina Suzuki , Shigeo Satoh
发明人： Sadahiro Kishii , Hirofumi Watatani , Masanori Terahara , Ryo Tanabe , Kaina Suzuki , Shigeo Satoh
IPC分类号： H01L21/762
CPC分类号： H01L29/045 , H01L21/76232 , H01L29/7846
摘要： A trench is formed in a surface layer of a semiconductor substrate, the trench surrounding an active region. A lower insulating film made of insulating material is deposited over the semiconductor device, the lower insulating film filling a lower region of the trench and leaving an empty space in an upper region. An upper insulating film made of insulating material having therein a tensile stress is deposited on the lower insulating film, the upper insulating film filling the empty space left in the upper space. The upper insulating film and the lower insulating film deposited over the semiconductor substrate other than in the trench are removed.
摘要翻译： 沟槽形成在半导体衬底的表面层中，沟槽围绕有源区。 在半导体器件上沉积由绝缘材料制成的下绝缘膜，下绝缘膜填充沟槽的下部区域并在上部区域留下空的空间。 在其上具有拉伸应力的由绝缘材料制成的上绝缘膜沉积在下绝缘膜上，上绝缘膜填充留在上部空间中的空白空间。 去除沉积在半导体衬底上而不是在沟槽中的上绝缘膜和下绝缘膜。
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5.发明授权Insulating film forming method capable of enhancing adhesion of silicon carbide film, etc. and semiconductor device 有权能够提高碳化硅膜等的粘附性的半导体装置的绝缘膜形成方法公开(公告)号：US07642185B2
公开(公告)日：2010-01-05
申请号：US11724219
申请日：2007-03-15
IPC分类号： H01L21/4763
CPC分类号： H01L21/76829 , H01L21/76807 , H01L21/76826 , H01L21/76832 , H01L21/76835 , H01L23/5222 , H01L23/5329 , H01L24/05 , H01L2224/02166 , H01L2924/13091 , H01L2924/14 , H01L2924/00
摘要： A first film made of silicon carbide is formed over a substrate. The surface of the first film is exposed to an oxidizing atmosphere to oxidize the surface layer of the first film. The surface of the first film is made in contact with chemical which makes the surface hydrophilic. On the hydrophilic surface of the first film, a second film is formed which is an insulating film made of a low dielectric constant insulating material having a relative dielectric constant of 2.7 or smaller or an insulating film made by a coating method. A sufficient adhesion property is obtained when a film made of low dielectric constant insulating material is formed on an insulating film made of silicon carbide having a small amount of oxygen contents.
摘要翻译： 在基板上形成由碳化硅制成的第一膜。 第一膜的表面暴露于氧化气氛以氧化第一膜的表面层。 第一膜的表面与化学品接触，使表面亲水。 在第一膜的亲水表面上，形成第二膜，该第二膜是由相对介电常数为2.7以下的低介电常数绝缘材料制成的绝缘膜，或通过涂布法制成的绝缘膜。 当在由少量氧含量的碳化硅制成的绝缘膜上形成由低介电常数绝缘材料制成的膜时，获得了足够的附着性。
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6.发明授权Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device 有权硅碳化硅，碳硅氧烷层的生长方法，半导体器件和半导体器件的制造方法公开(公告)号：US07485570B2
公开(公告)日：2009-02-03
申请号：US11206955
申请日：2005-08-19
IPC分类号： H01L21/00
CPC分类号： H01L21/02227 , C23C16/30 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/02315 , H01L21/0234 , H01L21/31633 , H01L21/76801 , H01L21/76808 , H01L21/76826 , H01L21/76832 , H01L21/76834
摘要： A method of manufacturing a semiconductor device includes the steps of: preparing an underlying structure having a silicon carbide layer covering a copper wiring, and growing silicon oxycarbide on the underlying structure by vapor deposition using, as source gas, tetramethylcyclotetrasiloxane, carbon dioxide gas and oxygen gas, a flow rate of said oxygen gas being at most 3% of a flow rate of the carbon dioxide gas. The surface of the silicon carbide layer of the underlying structure may be treated with a plasma of weak oxidizing gas which contains oxygen and has a molecular weight larger than that of O2 to bring the surface more hydrophilic. Film peel-off and cracks in the interlayer insulating layer decrease.
摘要翻译： 一种制造半导体器件的方法包括以下步骤：制备具有覆盖铜布线的碳化硅层的下面的结构，并且通过气相沉积作为原料气体四甲基环四硅氧烷，二氧化碳气体和氧气生长碳氢化合物 所述氧气的流量为二氧化碳气体流量的3％以下。 下面结构的碳化硅层的表面可以用含有氧的弱氧化气体的等离子体处理，其分子量大于O 2的分子量，使表面更亲水。 膜剥离和层间绝缘层中的裂纹减少。
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公开(公告)号：US20070123035A1
公开(公告)日：2007-05-31
申请号：US11358715
申请日：2006-02-22
IPC分类号： H01L21/4763 , H01L21/473
CPC分类号： H01L21/76829 , H01L21/76808
摘要： A method of manufacturing a semiconductor device comprising a wiring structure that includes a vertical wiring section is disclosed. The method comprises a step of forming an interlayer insulation film made of a low dielectric constant material on a wiring layer, a step of forming a silicon oxide film by CVD using SiH4 gas and CO2 gas on the interlayer insulation film, a step of forming a chemically amplified resist film to cover the silicon oxide film, and a step of forming a first opening in a position on the chemically amplified resist film where the vertical wiring section is to be formed.
摘要翻译： 公开了一种制造包括垂直布线部分的布线结构的半导体器件的方法。 该方法包括在布线层上形成由低介电常数材料制成的层间绝缘膜的步骤，使用SiH 4气体和CO 2通过CVD形成氧化硅膜的步骤 层间绝缘膜上的气体，形成化学放大抗蚀剂膜以覆盖氧化硅膜的步骤，以及在化学放大型抗蚀剂膜上形成第一开口的步骤，其中垂直布线部分为 要形成
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8.发明申请Method for forming SiC-based film and method for fabricating semiconductor device 审中-公开用于形成SiC基膜的方法和用于制造半导体器件的方法公开(公告)号：US20060205193A1
公开(公告)日：2006-09-14
申请号：US11220591
申请日：2005-09-08
CPC分类号： H01L21/02167 , C23C16/0227 , C23C16/325 , H01L21/3148 , H01L21/76807 , H01L21/76834 , H01L21/76835 , H01L21/76849 , H01L21/76867
摘要： The method for forming an SiC-based film comprises the step of generating NH3 plasma on the surface of a substrate 20 in a chamber to make NH3 plasma processing on the substrate 20, the step of removing reaction products containing nitrogen remaining in the chamber, and the step of forming an SiC film 34 on the substrate 20 by PECVD.
摘要翻译： 形成SiC基膜的方法包括在室中的衬底20的表面上产生NH 3等离子体以在衬底上进行NH 3等离子体处理的步骤 20，除去残留在室内的含有氮的反应产物的步骤，以及通过PECVD在基板20上形成SiC膜34的步骤。
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公开(公告)号：US07749897B2
公开(公告)日：2010-07-06
申请号：US12219271
申请日：2008-07-18
IPC分类号： H01L21/4763
CPC分类号： H01L21/76829 , H01L21/76808
摘要： A method of manufacturing a semiconductor device comprising a wiring structure that includes a vertical wiring section is disclosed. The method comprises a step of forming an interlayer insulation film made of a low dielectric constant material on a wiring layer, a step of forming a silicon oxide film by CVD using SiH4 gas and CO2 gas on the interlayer insulation film, a step of forming a chemically amplified resist film to cover the silicon oxide film, and a step of forming a first opening in a position on the chemically amplified resist film where the vertical wiring section is to be formed.
摘要翻译： 公开了一种制造包括垂直布线部分的布线结构的半导体器件的方法。 该方法包括在布线层上形成由低介电常数材料制成的层间绝缘膜的步骤，通过在层间绝缘膜上使用SiH 4气体和CO 2气体通过CVD形成氧化硅膜的步骤，形成 化学放大抗蚀剂膜覆盖氧化硅膜，以及在要形成垂直布线部分的化学放大抗蚀剂膜上的位置形成第一开口的步骤。
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10.发明申请公开(公告)号：US20080284027A1
公开(公告)日：2008-11-20
申请号：US12110662
申请日：2008-04-28
IPC分类号： H01L23/48 , H01L21/4763
CPC分类号： H01L23/53238 , H01L21/2855 , H01L21/76805 , H01L21/76844 , H01L21/76846 , H01L21/76865 , H01L21/76873 , H01L23/5226 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device has forming, in a dielectric film, a first opening and a second opening located in the first opening, forming a first metal film containing a first metal over a whole surface, etching the first metal film at a bottom of the second opening using a sputtering process and forming a second metal film containing a second metal over the whole surface, and burying a conductive material in the second opening and the first opening.
摘要翻译： 制造半导体器件的方法在电介质膜中形成位于第一开口中的第一开口和第二开口，在整个表面上形成含有第一金属的第一金属膜，在底部蚀刻第一金属膜 的第二开口，并且在整个表面上形成含有第二金属的第二金属膜，并且在第二开口和第一开口中埋入导电材料。
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