摘要:
A substrate for wiring an electrical component in an electrical circuit comprises a base substrate, a first insulating layer of an organic material formed over the base substrate, a wiring member formed on the first insulating layer, coupled to the component, a second insulating layer of an organic material formed over the first insulating layer, and a terminal member on the first insulating layer and appearing from the second insulating layer, connected to the wiring member. A third insulating layer of an organic material may be interposed between the first and the second insulating layers, carrying a second wiring member connected to the first wiring member.
摘要:
A liquid crystal display device of the present invention includes: two substrates facing each other, at least one of the substrates being transparent; electrodes disposed on inside surfaces of the respective substrates; a display medium which is provided between the two substrates and formed of polymer walls containing a polymer as their main component and liquid crystal regions containing liquid crystal as their main component; and a plurality of pixels, wherein the liquid crystal regions are partitioned by the polymer walls and are close to the substrates, portions of the liquid crystal regions close to the substrates being in parallel with the substrates, an interval a between the center of one liquid crystal region and the center of an adjacent liquid crystal region in a direction along the surface of the substrate is within a width of one pixel along the direction, and 80% or more of the intervals a satisfy the relationship: 3b/2>a>b/2, where b is an average of the intervals a.
摘要翻译:本发明的液晶显示装置包括:彼此面对的两个基板,至少一个基板是透明的; 设置在各个基板的内表面上的电极; 设置在两个基板之间并由聚合物壁形成的显示介质,所述聚合物壁包含聚合物作为其主要成分和以液晶为主要成分的液晶区域; 和多个像素,其中液晶区域被聚合物壁划分并且靠近基板,靠近基板的液晶区域的部分与基板平行,一个液体的中心之间的间隔a 晶体区域和沿着基板表面的方向的相邻液晶区域的中心在沿着该方向的一个像素的宽度内,并且间隔a的80%或更多满足关系:3b / 2> a> b / 2,其中b是间隔a的平均值。
摘要:
Improvements in a method for performing a monocrystallizing operation through the application of energy beams upon a non-monocrystalline thin-film of non-crystalline or polycrystalline material formed on a non-crystalline insulating film. The resulting superior monocrystalline thin-film has a crystal direction coinciding with that of the monocrystalline silicon base-plate and is formed on the insulating film even if the insulating film is as thick as 4 .mu.m. The thin-film is sufficiently covered between the active layers of a three-dimensional circuit element on the monocrystalline silicon base plate. '
摘要:
High voltage diffusion-self-alignment metal oxide semiconductor devices and control logic circuitry therefor are integrated in a single semiconductor body. The integrated semiconductor device includes a considerably large number of output terminals compared to the number of input terminals. The output terminals develop signals of high voltages derived from the high voltage diffusion-self-alignment metal oxide semiconductor devices which are positioned at a peripheral zone of the semiconductor body.
摘要:
In an active matrix display device integrated with a peripheral drive circuit using thin film transistors, when Vgr is a voltage required for one gradation, Ct is capacitance of all pixels, Cgd is capacitance between a gate and a drain, .DELTA.Vg is a difference between ON/OFF gate voltages, and .DELTA.Vs is a feedthrough voltage, the respective parameters satisfy an expression: .vertline.vgr.vertline.>.vertline.(1/Ct)[Cgd.multidot..DELTA.Vg-Ct.multidot..DELTA.Vs].vertline.. According to this, even if dispersion occurs in the characteristics of the thin film transistors arranged for a buffer circuit or an active matrix circuit, it is possible to prevent the dispersion from influencing the gradation display.
摘要:
A substrate for wiring an electrical component with an external circuit, comprises a base plate for accommodating the electrical component therein, a first insulation layer made of an organic material formed on the base plate, a first wiring formed on the first insulating layer, a second insulation layer made of an organic material formed on the first wiring, a second wiring formed on the second insulation layer, the second wiring being coupled to the electrical component, the base plate, the first insulation layer, the first wiring, and the second insulation layer being bent at the marginal edges thereof, in which portions of the first wiring on the bent portions are made of a material having a low temperature of recrystallization.
摘要:
In a metal oxide semiconductor device of the diffusion-self-alignment type which comprises a semiconductor body having a conductivity of one type, a drain and a source regions having a conductivity opposite that of the semiconductor body, and a channel region of the same conductivity type as the semiconductor body and having a higher conductivity than that of the semiconductor body, said channel region being formed in such a manner to surround the source region through the use of double diffusion techniques. An active pinched resistor layer of the opposite conductivity type to that of the semiconductor body and having a lower conductivity than that of the drain and the source regions is formed on the surface of the semiconductor body to extend between the drain and the channel regions. A field plate or overlay metallization is disposed on an insulating layer adjacent the drain metallization and extends outwardly towards the gate metallization so that it overlies a part of the active pinched resistor layer near the drain contact region.