Liquid crystal display device with a polymer between liquid crystal
regions
    12.
    发明授权
    Liquid crystal display device with a polymer between liquid crystal regions 失效
    具有液晶区域之间的聚合物的液晶显示装置

    公开(公告)号:US5473450A

    公开(公告)日:1995-12-05

    申请号:US054454

    申请日:1993-04-27

    摘要: A liquid crystal display device of the present invention includes: two substrates facing each other, at least one of the substrates being transparent; electrodes disposed on inside surfaces of the respective substrates; a display medium which is provided between the two substrates and formed of polymer walls containing a polymer as their main component and liquid crystal regions containing liquid crystal as their main component; and a plurality of pixels, wherein the liquid crystal regions are partitioned by the polymer walls and are close to the substrates, portions of the liquid crystal regions close to the substrates being in parallel with the substrates, an interval a between the center of one liquid crystal region and the center of an adjacent liquid crystal region in a direction along the surface of the substrate is within a width of one pixel along the direction, and 80% or more of the intervals a satisfy the relationship: 3b/2>a>b/2, where b is an average of the intervals a.

    摘要翻译: 本发明的液晶显示装置包括:彼此面对的两个基板,至少一个基板是透明的; 设置在各个基板的内表面上的电极; 设置在两个基板之间并由聚合物壁形成的显示介质,所述聚合物壁包含聚合物作为其主要成分和以液晶为主要成分的液晶区域; 和多个像素,其中液晶区域被聚合物壁划分并且靠近基板,靠近基板的液晶区域的部分与基板平行,一个液体的中心之间的间隔a 晶体区域和沿着基板表面的方向的相邻液晶区域的中心在沿着该方向的一个像素的宽度内,并且间隔a的80%或更多满足关系:3b / 2> a> b / 2,其中b是间隔a的平均值。

    Method of manufacturing monocrystalline thin-film
    13.
    发明授权
    Method of manufacturing monocrystalline thin-film 失效
    制造单晶薄膜的方法

    公开(公告)号:US4801351A

    公开(公告)日:1989-01-31

    申请号:US943428

    申请日:1986-12-19

    IPC分类号: C30B29/66 H01L21/20 C30B1/08

    摘要: Improvements in a method for performing a monocrystallizing operation through the application of energy beams upon a non-monocrystalline thin-film of non-crystalline or polycrystalline material formed on a non-crystalline insulating film. The resulting superior monocrystalline thin-film has a crystal direction coinciding with that of the monocrystalline silicon base-plate and is formed on the insulating film even if the insulating film is as thick as 4 .mu.m. The thin-film is sufficiently covered between the active layers of a three-dimensional circuit element on the monocrystalline silicon base plate. '

    摘要翻译: 通过在非晶体绝缘膜上形成非晶或多晶材料的非单晶薄膜上施加能量束来进行单晶化操作的方法的改进。 所得到的优异的单晶薄膜的晶体方向与单晶硅基板的晶体方向一致,即使绝缘膜厚度达到4μm,也形成在绝缘膜上。 薄膜充分覆盖在单晶硅基板上的三维电路元件的有源层之间。

    Active matrix electro-optical device
    15.
    发明授权
    Active matrix electro-optical device 失效
    有源矩阵电光装置

    公开(公告)号:US5982348A

    公开(公告)日:1999-11-09

    申请号:US921839

    申请日:1997-09-02

    摘要: In an active matrix display device integrated with a peripheral drive circuit using thin film transistors, when Vgr is a voltage required for one gradation, Ct is capacitance of all pixels, Cgd is capacitance between a gate and a drain, .DELTA.Vg is a difference between ON/OFF gate voltages, and .DELTA.Vs is a feedthrough voltage, the respective parameters satisfy an expression: .vertline.vgr.vertline.>.vertline.(1/Ct)[Cgd.multidot..DELTA.Vg-Ct.multidot..DELTA.Vs].vertline.. According to this, even if dispersion occurs in the characteristics of the thin film transistors arranged for a buffer circuit or an active matrix circuit, it is possible to prevent the dispersion from influencing the gradation display.

    摘要翻译: 在与使用薄膜晶体管的外围驱动电路集成的有源矩阵显示装置中,当Vgr是一个灰度所需的电压时,Ct是所有像素的电容,Cgd是栅极和漏极之间的电容,DELTA Vg是 ON / OFF栅极电压和DELTA Vs是馈通电压,各个参数满足表达式:| vgr |> |(1 / Ct)[Cgdx DELTA Vg-Ctx DELTA Vs] |。 据此,即使在布置用于缓冲电路或有源矩阵电路的薄膜晶体管的特性中发生色散,也可以防止色散影响灰度显示。

    High voltage, low on-resistance diffusion-self-alignment metal oxide
semiconductor device and manufacture thereof
    17.
    发明授权
    High voltage, low on-resistance diffusion-self-alignment metal oxide semiconductor device and manufacture thereof 失效
    高电压,低导通电阻扩散自对准金属氧化物半导体器件及其制造

    公开(公告)号:US4058822A

    公开(公告)日:1977-11-15

    申请号:US691874

    申请日:1976-06-01

    摘要: In a metal oxide semiconductor device of the diffusion-self-alignment type which comprises a semiconductor body having a conductivity of one type, a drain and a source regions having a conductivity opposite that of the semiconductor body, and a channel region of the same conductivity type as the semiconductor body and having a higher conductivity than that of the semiconductor body, said channel region being formed in such a manner to surround the source region through the use of double diffusion techniques. An active pinched resistor layer of the opposite conductivity type to that of the semiconductor body and having a lower conductivity than that of the drain and the source regions is formed on the surface of the semiconductor body to extend between the drain and the channel regions. A field plate or overlay metallization is disposed on an insulating layer adjacent the drain metallization and extends outwardly towards the gate metallization so that it overlies a part of the active pinched resistor layer near the drain contact region.

    摘要翻译: 在扩散自对准型的金属氧化物半导体器件中,其包括具有一种导电性的半导体本体,具有与半导体本体的导电性相反的导电性的漏极和源极区域以及相同导电性的沟道区域 类型为半导体本体并且具有比半导体本体更高的导电性,所述沟道区以通过使用双扩散技术包围源极区的方式形成。 在半导体本体的表面上形成与半导体本体相反的导电类型的有源夹持电阻层,并且具有比漏极和源极区更低的导电性,以在漏极和沟道区之间延伸。 场板或覆盖金属化设置在与漏极金属化相邻的绝缘层上,并向外延伸到栅极金属化,使得其覆盖在漏极接触区域附近的有源夹持电阻器层的一部分。