公开(公告)号：US20070224791A1

公开(公告)日：2007-09-27

申请号：US11786880

申请日：2007-04-13

申请人： Toru Takayama ,  Keiji Sato ,  Shunpei Yamazaki

发明人： Toru Takayama ,  Keiji Sato ,  Shunpei Yamazaki

IPC分类号： H01L21/3205

CPC分类号： C23C14/185 ,  G02F2001/136295 ,  H01L21/2855 ,  H01L27/124 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L2029/7863 ,  H01L2924/0002 ,  H01L2924/00

摘要： By using a high purity target as a target, using a single gas, argon (Ar), as a sputtering gas, setting the substrate temperature at 300° C. or less, setting the sputtering power from 1 kW to 9 kW, and setting the sputtering gas pressure from 1.0 Pa to 3.0 Pa, the film stress of a film is made from −1×1010 dyn/cm2 to 1 x 10 dyn/cm2. By thus using a conducting film in which the amount of sodium contained within the film is equal to or less than 0.03 ppm, preferably equal to or less than 0.01 ppm, and having a low electrical resistivity (equal to or less than 40 μΩ•cm), as a gate wiring material and a material for other wirings of a TFT, the operating performance and the reliability of a semiconductor device provided with the TFT can be increased.

摘要翻译： 通过使用高纯度靶作为目标，使用单一气体氩（Ar）作为溅射气体，将衬底温度设定在300℃以下，将溅射功率设定为1kW至9kW，并设定 溅射气体压力为1.0Pa至3.0Pa，膜的膜应力由-1×10 10 / cm 2至1×10 5 / SUP> dyn / cm 2。 通过这样使用导电膜，其中膜中所含的钠的量等于或小于0.03ppm，优选等于或小于0.01ppm，并具有低电阻率（等于或小于40μΩ·cm ），作为栅极布线材料和TFT的其他配线的材料，可以提高设置有TFT的半导体器件的操作性能和可靠性。

公开(公告)号：US07245018B1

公开(公告)日：2007-07-17

申请号：US09598736

申请日：2000-06-21

申请人： Toru Takayama ,  Keiji Sato ,  Shunpei Yamazaki

发明人： Toru Takayama ,  Keiji Sato ,  Shunpei Yamazaki

IPC分类号： H01L23/48 ,  H01L23/52

CPC分类号： H01L33/62 ,  C23C14/165 ,  C23C14/3414 ,  H01L21/2855 ,  H01L23/552 ,  H01L27/124 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device having good TFT characteristics is realized. By using a high purity target as a target, using a single gas, argon (Ar), as a sputtering gas, setting the substrate temperature equal to or less than 300° C., and setting the sputtering gas pressure from 1.0 Pa to 3.0 Pa, the film stress of a film is made from −1×1010 dyn/cm2 to 1×10 dyn/cm2. By thus using a conducting film in which the amount of sodium contained within the film is equal to or less than 0.3 ppm, preferably equal to or less than 0.1 ppm, and having a low electrical resistivity (equal to or less than 40 μΩ·cm), as a gate wiring material and a material for other wirings of a TFT, the operating performance and the reliability of a semiconductor device provided with the TFT can be increased.

摘要翻译： 实现了具有良好的TFT特性的半导体器件。 通过使用高纯度靶作为靶，使用单一气体氩（Ar）作为溅射气体，将基板温度设定为300℃以下，将溅射气体压力设定为1.0Pa〜3.0 Pa，薄膜的薄膜应力由-1×10 10 /秒±2倍至1×10 9 /秒2倍/ / SUP>。 通过这样使用导电膜，其中膜中所含的钠的量等于或小于0.3ppm，优选等于或小于0.1ppm，并具有低电阻率（等于或小于40μΩ·cm ），作为栅极布线材料和TFT的其他配线的材料，可以提高设置有TFT的半导体器件的操作性能和可靠性。

公开(公告)号：US08357611B2

公开(公告)日：2013-01-22

申请号：US13042751

申请日：2011-03-08

申请人： Toru Takayama ,  Keiji Sato ,  Shunpei Yamazaki

发明人： Toru Takayama ,  Keiji Sato ,  Shunpei Yamazaki

IPC分类号： H01L33/00

CPC分类号： H01L33/62 ,  C23C14/165 ,  C23C14/3414 ,  H01L21/2855 ,  H01L23/552 ,  H01L27/124 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device having good TFT characteristics is realized. By using a high purity target as a target, using a single gas, argon (Ar), as a sputtering gas, setting the substrate temperature equal to or less than 300° C., and setting the sputtering gas pressure from 1.0 Pa to 3.0 Pa, the film stress of a film is made from −1×1010 dyn/cm2 to 1×1010 dyn/cm2. By thus using a conducting film in which the amount of sodium contained within the film is equal to or less than 0.3 ppm, preferably equal to or less than 0.1 ppm, and having a low electrical resistivity (equal to or less than 40 μΩ·cm), as a gate wiring material and a material for other wirings of a TFT, the operating performance and the reliability of a semiconductor device provided with the TFT can be increased.

摘要翻译： 实现了具有良好的TFT特性的半导体器件。 通过使用高纯度靶作为靶，使用单一气体氩（Ar）作为溅射气体，将基板温度设定为300℃以下，将溅射气体压力设定为1.0Pa〜3.0 Pa时，膜的膜应力为-1×1010dyn / cm 2〜1×1010dyn / cm 2。 通过这样使用导电膜，其中膜中所含的钠的量等于或小于0.3ppm，优选等于或小于0.1ppm，并且具有低电阻率（等于或小于40μ＆OHgr· cm），作为栅极布线材料和TFT的其它布线的材料，可以提高设置有TFT的半导体器件的操作性能和可靠性。

公开(公告)号：US07816191B2

公开(公告)日：2010-10-19

申请号：US11786880

申请日：2007-04-13

申请人： Toru Takayama ,  Keiji Sato ,  Shunpei Yamazaki

发明人： Toru Takayama ,  Keiji Sato ,  Shunpei Yamazaki

IPC分类号： H01L21/00

CPC分类号： C23C14/185 ,  G02F2001/136295 ,  H01L21/2855 ,  H01L27/124 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L2029/7863 ,  H01L2924/0002 ,  H01L2924/00

摘要： By using a high purity target as a target, using a single gas, argon (Ar), as a sputtering gas, setting the substrate temperature at 300° C. or less, setting the sputtering power from 1 kW to 9 kW, and setting the sputtering gas pressure from 1.0 Pa to 3.0 Pa, the film stress of a film is made from −1 ×1010cm2 to 1×1010 dyn/cm2. By thus using a conducting film in which the amount of sodium contained within the film is equal to or less than 0.3 ppm, preferably equal to or less than 0.1 ppm, and having a low electrical resistivity (equal to or less than 40 μΩ•cm), as a gate wiring material and a material for other wirings of a TFT, the operating performance and the reliability of a semiconductor device provided with the TFT can be increased.

摘要翻译： 通过使用高纯度靶作为目标，使用单一气体氩（Ar）作为溅射气体，将衬底温度设定在300℃以下，将溅射功率设定为1kW至9kW，并设定 溅射气体压力为1.0Pa〜3.0Pa，膜的膜应力为-1×10 10 cm 2〜1×10 10 dyn / cm 2。 通过这样使用导电膜，其中膜中所含的钠的量等于或小于0.3ppm，优选等于或小于0.1ppm，并具有低电阻率（等于或小于40μ＆OHgr; cm），作为栅极布线材料和TFT的其它布线的材料，可以提高设置有TFT的半导体器件的操作性能和可靠性。

公开(公告)号：US08753491B2

公开(公告)日：2014-06-17

申请号：US12945296

申请日：2010-11-12

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Keiji Sato

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Keiji Sato

IPC分类号： C23C14/34

CPC分类号： C23C14/3407 ,  H01L27/1225

摘要： It is an object to provide a method for packaging a target material with which a thin film that is less contaminated with an impurity in the air such as a compound containing a hydrogen atom can be formed. In addition, it is an object to provide a method for mounting a target with which a thin film that is less contaminated with an impurity can be formed. In order to achieve the objects, a target material in a target is not exposed to the air and kept sealed after being manufactured until a deposition apparatus on which the target is mounted is evacuated.

摘要翻译： 本发明的目的是提供一种用于包装目标材料的方法，通过该方法可以形成诸如含有氢原子的化合物在空气中较少污染的薄膜。 另外，本发明的目的是提供一种安装目标的方法，通过该方法可以形成较少被杂质污染的薄膜。 为了达到上述目的，目标物中的目标材料不会暴露在空气中，并且在制造之后保持密封，直到其上安装了目标物的沉积装置被抽真空。

公开(公告)号：US20110114480A1

公开(公告)日：2011-05-19

申请号：US12945296

申请日：2010-11-12

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Keiji Sato

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Keiji Sato

IPC分类号： C23C14/34 ,  B23P11/00

CPC分类号： C23C14/3407 ,  H01L27/1225

摘要： It is an object to provide a method for packaging a target material with which a thin film that is less contaminated with an impurity in the air such as a compound containing a hydrogen atom can be formed. In addition, it is an object to provide a method for mounting a target with which a thin film that is less contaminated with an impurity can be formed. In order to achieve the objects, a target material in a target is not exposed to the air and kept sealed after being manufactured until a deposition apparatus on which the target is mounted is evacuated.

摘要翻译： 本发明的目的是提供一种用于包装目标材料的方法，通过该方法可以形成诸如含有氢原子的化合物在空气中较少污染的薄膜。 另外，本发明的目的是提供一种安装目标的方法，通过该方法可以形成较少被杂质污染的薄膜。 为了达到上述目的，目标物中的目标材料不会暴露在空气中，并且在制造之后保持密封，直到其上安装了目标物的沉积装置被抽真空。

公开(公告)号：US08492862B2

公开(公告)日：2013-07-23

申请号：US12945421

申请日：2010-11-12

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Keiji Sato

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Keiji Sato

IPC分类号： H01L31/115

CPC分类号： H01J37/3429 ,  B29C31/008 ,  C04B35/01 ,  C04B35/453 ,  C04B35/645 ,  C04B35/6455 ,  C04B41/0072 ,  C04B41/009 ,  C04B41/80 ,  C04B2111/00844 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3418 ,  C04B2235/658 ,  C04B2235/662 ,  C04B2235/666 ,  C04B2235/77 ,  C23C14/10 ,  C23C14/3414 ,  C23C14/564 ,  H01J2237/332 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  C04B35/04 ,  C04B35/10 ,  C04B35/457 ,  C04B41/4517 ,  C04B41/53

摘要： One object is to provide a deposition technique for forming an oxide semiconductor film. By forming an oxide semiconductor film using a sputtering target including a sintered body of a metal oxide whose concentration of hydrogen contained is low, for example, lower than 1×1016 atoms/cm3, the oxide semiconductor film contains a small amount of impurities such as a compound containing hydrogen typified by H2O or a hydrogen atom. In addition, this oxide semiconductor film is used as an active layer of a transistor.

公开(公告)号：US20110223699A1

公开(公告)日：2011-09-15

申请号：US13042751

申请日：2011-03-08

申请人： Toru Takayama ,  Keiji Sato ,  Shunpei Yamazaki

发明人： Toru Takayama ,  Keiji Sato ,  Shunpei Yamazaki

IPC分类号： H01L33/40 ,  H01L21/321

CPC分类号： H01L33/62 ,  C23C14/165 ,  C23C14/3414 ,  H01L21/2855 ,  H01L23/552 ,  H01L27/124 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device having good TFT characteristics is realized. By using a high purity target as a target, using a single gas, argon (Ar), as a sputtering gas, setting the substrate temperature equal to or less than 300° C., and setting the sputtering gas pressure from 1.0 Pa to 3.0 Pa, the film stress of a film is made from −1×1010 dyn/cm2 to 1×1010 dyn/cm2. By thus using a conducting film in which the amount of sodium contained within the film is equal to or less than 0.3 ppm, preferably equal to or less than 0.1 ppm, and having a low electrical resistivity (equal to or less than 40 μΩ·cm), as a gate wiring material and a material for other wirings of a TFT, the operating performance and the reliability of a semiconductor device provided with the TFT can be increased.

摘要翻译： 实现了具有良好的TFT特性的半导体器件。 通过使用高纯度靶作为靶，使用单一气体氩（Ar）作为溅射气体，将基板温度设定为300℃以下，将溅射气体压力设定为1.0Pa〜3.0 Pa时，膜的膜应力为-1×1010dyn / cm 2〜1×1010dyn / cm 2。 通过这样使用导电膜，其中膜中所含的钠的量等于或小于0.3ppm，优选等于或小于0.1ppm，并且具有低电阻率（等于或小于40μ＆OHgr· cm），作为栅极布线材料和TFT的其它布线的材料，可以提高设置有TFT的半导体器件的操作性能和可靠性。

公开(公告)号：US20110114944A1

公开(公告)日：2011-05-19

申请号：US12945421

申请日：2010-11-12

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Keiji Sato

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Keiji Sato

IPC分类号： H01L29/786 ,  C23C14/34 ,  B24B1/00 ,  B32B38/00 ,  B32B38/16

CPC分类号： H01J37/3429 ,  B29C31/008 ,  C04B35/01 ,  C04B35/453 ,  C04B35/645 ,  C04B35/6455 ,  C04B41/0072 ,  C04B41/009 ,  C04B41/80 ,  C04B2111/00844 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3418 ,  C04B2235/658 ,  C04B2235/662 ,  C04B2235/666 ,  C04B2235/77 ,  C23C14/10 ,  C23C14/3414 ,  C23C14/564 ,  H01J2237/332 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  C04B35/04 ,  C04B35/10 ,  C04B35/457 ,  C04B41/4517 ,  C04B41/53

摘要： One object is to provide a deposition technique for forming an oxide semiconductor film. By forming an oxide semiconductor film using a sputtering target including a sintered body of a metal oxide whose concentration of hydrogen contained is low, for example, lower than 1×1016 atoms/cm3, the oxide semiconductor film contains a small amount of impurities such as a compound containing hydrogen typified by H2O or a hydrogen atom. In addition, this oxide semiconductor film is used as an active layer of a transistor.

摘要翻译： 一个目的是提供一种用于形成氧化物半导体膜的沉积技术。 通过使用包含含氢浓度低的金属氧化物的烧结体（例如低于1×1016原子/ cm3）的溅射靶形成氧化物半导体膜，氧化物半导体膜含有少量的杂质如 含有以H 2 O或氢原子为代表的氢的化合物。 此外，该氧化物半导体膜用作晶体管的有源层。

公开(公告)号：US07226822B2

公开(公告)日：2007-06-05

申请号：US10672521

申请日：2003-09-26

申请人： Toru Takayama ,  Keiji Sato ,  Shunpei Yamazaki

发明人： Toru Takayama ,  Keiji Sato ,  Shunpei Yamazaki

IPC分类号： H01L21/00

CPC分类号： C23C14/185 ,  G02F2001/136295 ,  H01L21/2855 ,  H01L27/124 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L2029/7863 ,  H01L2924/0002 ,  H01L2924/00

摘要： By using a high purity target as a target, using a single gas, argon (Ar), as a sputtering gas, setting the substrate temperature at 300° C. or less, setting the sputtering power from 1 kW to 9 kW, and setting the sputtering gas pressure from 1.0 Pa to 3.0 Pa, the film stress of a film is made from −1×1010 dyn/cm2 to 1×1010 dyn/cm2. By thus using a conducting film in which the amount of sodium contained within the film is equal to or less than 0.03 ppm, preferably equal to or less than 0.01 ppm, and having a low electrical resistivity (equal to or less than 40 μΩ·cm), as a gate wiring material and a material for other wirings of a TFT, the operating performance and the reliability of a semiconductor device provided with the TFT can be increased.

摘要翻译： 通过使用高纯度靶作为目标，使用单一气体氩（Ar）作为溅射气体，将衬底温度设定在300℃以下，将溅射功率设定为1kW至9kW，并设定 溅射气体压力为1.0Pa至3.0Pa，膜的膜应力由-1×10 10 / cm 2至1×10 10 / > dyn / cm 2。 通过这样使用导电膜，其中膜中所含的钠的量等于或小于0.03ppm，优选等于或小于0.01ppm，并具有低电阻率（等于或小于40μΩ·cm ），作为栅极布线材料和TFT的其他配线的材料，可以提高设置有TFT的半导体器件的操作性能和可靠性。