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109 条记录 (耗时 0.035 秒)

    ZnO based semiconductor devices and methods of manufacturing the same
    11.
    发明授权
    ZnO based semiconductor devices and methods of manufacturing the same 有权
    基于ZnO的半导体器件及其制造方法

    公开(公告)号：US08421070B2

    公开(公告)日：2013-04-16

    申请号：US12929324

    申请日：2011-01-14

    申请人： Chang-jung Kim ,  I-hun Song ,  Dong-hun Kang ,  Young-soo Park

    发明人： Chang-jung Kim ,  I-hun Song ,  Dong-hun Kang ,  Young-soo Park

    IPC分类号： H01L29/12

    CPC分类号： H01L29/7869

    摘要： A semiconductor device may include a composite represented by Formula 1 below as an active layer. x(Ga2O3).y(In2O3).z(ZnO)  Formula 1 wherein, about 0.75≦x/z≦about 3.15, and about 0.55≦y/z≦about 1.70. Switching characteristics of displays and driving characteristics of driving transistors may be improved by adjusting the amounts of a gallium (Ga) oxide and an indium (In) oxide mixed with a zinc (Zn) oxide and improving optical sensitivity.

    摘要翻译： 半导体器件可以包括由下面的式1表示的复合物作为有源层。 x（Ga 2 O 3）y（In 2 O 3）z（ZnO）式1其中约0.75＆lt; lE; x / z＆nlE;约3.15和约0.55≤n1E; y /z≤n1E;约1.70。 可以通过调节与锌（Zn）氧化物混合的镓（Ga）氧化物和铟（In））的量来提高驱动晶体管的开关特性并提高光学灵敏度。

    Oxide semiconductor transistors and methods of manufacturing the same
    12.
    发明授权
    Oxide semiconductor transistors and methods of manufacturing the same 有权
    氧化物半导体晶体管及其制造方法

    公开(公告)号：US08399882B2

    公开(公告)日：2013-03-19

    申请号：US12801500

    申请日：2010-06-11

    申请人： Sang-hun Jeon ,  I-hun Song ,  Chang-jung Kim ,  Sung-ho Park

    发明人： Sang-hun Jeon ,  I-hun Song ,  Chang-jung Kim ,  Sung-ho Park

    IPC分类号： H01L29/12

    CPC分类号： H01L29/7869

    摘要： Transistors and methods of manufacturing the same. A transistor may be an oxide thin film transistor (TFT) with a self-aligned top gate structure. The transistor may include a gate insulating layer between a channel region and a gate electrode that extends from two sides of the gate electrode. The gate insulating layer may cover at least a portion of source and drain regions.

    摘要翻译： 晶体管及其制造方法。 晶体管可以是具有自对准顶栅结构的氧化物薄膜晶体管（TFT）。 晶体管可以包括从栅电极的两侧延伸的沟道区和栅电极之间的栅极绝缘层。 栅绝缘层可以覆盖源区和漏区的至少一部分。

    Inverter, method of manufacturing the same, and logic circuit including the inverter
    13.
    发明授权
    Inverter, method of manufacturing the same, and logic circuit including the inverter 有权
    逆变器及其制造方法以及包括逆变器的逻辑电路

    公开(公告)号：US08383472B2

    公开(公告)日：2013-02-26

    申请号：US13067306

    申请日：2011-05-24

    申请人： Huaxiang Yin ,  I-hun Song ,  Chang-jung Kim ,  Sang-wook Kim ,  Sun-il Kim

    发明人： Huaxiang Yin ,  I-hun Song ,  Chang-jung Kim ,  Sang-wook Kim ,  Sun-il Kim

    IPC分类号： H01L21/336

    CPC分类号： H01L21/823807 ,  H01L27/0922 ,  H01L27/1225 ,  H01L27/1251

    摘要： Provided are an inverter, a method of manufacturing the inverter, and a logic circuit including the inverter. The inverter may include a first transistor and a second transistor having different channel layer structures. A channel layer of the first transistor may include a lower layer and an upper layer, and a channel layer of the second transistor may be the same as one of the lower layer and the upper layer. At least one of the lower layer and the upper layer may be an oxide layer. The inverter may be an enhancement/depletion (E/D) mode inverter or a complementary inverter.

    摘要翻译： 提供逆变器，逆变器的制造方法以及包括逆变器的逻辑电路。 反相器可以包括具有不同沟道层结构的第一晶体管和第二晶体管。 第一晶体管的沟道层可以包括下层和上层，并且第二晶体管的沟道层可以与下层和上层之一相同。 下层和上层中的至少一层可以是氧化物层。 逆变器可以是增强/耗尽型（E / D）型逆变器或互补型逆变器。

    Channel layers and semiconductor devices including the same
    14.
    发明授权
    Channel layers and semiconductor devices including the same 有权
    通道层和包括其的半导体器件

    公开(公告)号：US08232551B2

    公开(公告)日：2012-07-31

    申请号：US12458491

    申请日：2009-07-14

    申请人： Sun-il Kim ,  I-hun Song ,  Chang-jung Kim ,  Jae-chul Park ,  Sang-wook Kim

    发明人： Sun-il Kim ,  I-hun Song ,  Chang-jung Kim ,  Jae-chul Park ,  Sang-wook Kim

    IPC分类号： H01L29/26

    CPC分类号： H01L29/7869 ,  H01L29/78696

    摘要： Channel layers and semiconductor devices including the channel layers are disclosed. A channel layer may include a multi-layered structure. Layers forming the channel layer may have different carrier mobilities and/or carrier densities. The channel layer may have a double layered structure including a first layer and a second layer which may be formed of different oxides. Characteristics of the transistor may vary according to materials used to form the channel layers and/or thicknesses thereof.

    摘要翻译： 公开了包括沟道层的通道层和半导体器件。 沟道层可以包括多层结构。 形成沟道层的层可具有不同的载流子迁移率和/或载流子密度。 沟道层可以具有双层结构，其包括可由不同氧化物形成的第一层和第二层。 晶体管的特性可以根据用于形成沟道层的材料和/或其厚度而变化。

    Transistors, Methods Of Manufacturing The Same, And Electronic Devices Including Transistors
    15.
    发明申请
    Transistors, Methods Of Manufacturing The Same, And Electronic Devices Including Transistors 有权
    晶体管及其制造方法及包括晶体管的电子器件

    公开(公告)号：US20120085999A1

    公开(公告)日：2012-04-12

    申请号：US13099806

    申请日：2011-05-03

    申请人： I-hun Song ,  Yin Huaxiang ,  Sang-hun Jeon ,  Sung-ho Park

    发明人： I-hun Song ,  Yin Huaxiang ,  Sang-hun Jeon ,  Sung-ho Park

    IPC分类号： H01L29/12 ,  H01L31/113

    CPC分类号： H01L27/14681 ,  H01L27/14692

    摘要： Example embodiments disclose transistors, methods of manufacturing the same, and electronic devices including transistors. An active layer of a transistor may include a plurality of material layers (oxide layers) with different energy band gaps. The active layer may include a channel layer and a photo sensing layer. The photo sensing layer may have a single-layered or multi-layered structure. When the photo sensing layer has a multi-layered structure, the photo sensing layer may include a first material layer and a second material layer that are sequentially stacked on a surface of the channel layer. The first layer and the second layer may be alternately stacked one or more times.

    摘要翻译： 示例性实施例公开了晶体管，其制造方法以及包括晶体管的电子器件。 晶体管的有源层可以包括具有不同能带隙的多个材料层（氧化物层）。 有源层可以包括沟道层和感光层。 感光层可以具有单层或多层结构。 当感光层具有多层结构时，感光层可以包括依次层叠在沟道层的表面上的第一材料层和第二材料层。 第一层和第二层可以交替堆叠一次或多次。

    Thin film transistor having a graded metal oxide layer
    16.
    发明授权
    Thin film transistor having a graded metal oxide layer 有权
    具有渐变金属氧化物层的薄膜晶体管

    公开(公告)号：US08063421B2

    公开(公告)日：2011-11-22

    申请号：US12007038

    申请日：2008-01-04

    申请人： Dong-hun Kang ,  Stefanovich Genrikh ,  I-hun Song ,  Young-soo Park ,  Chang-jung Kim

    发明人： Dong-hun Kang ,  Stefanovich Genrikh ,  I-hun Song ,  Young-soo Park ,  Chang-jung Kim

    IPC分类号： H01L31/062 ,  H01L31/113

    CPC分类号： H01L29/7869

    摘要： Provided are a thin film transistor and a method of manufacturing the same. The thin film transistor may include a gate; a channel layer; a source and a drain, the source and the drain being formed of metal; and a metal oxide layer, the metal oxide layer being formed between the channel layer and the source and the drain. The metal oxide layer may have a gradually changing metal content between the channel layer and the source and the drain.

    摘要翻译： 提供一种薄膜晶体管及其制造方法。 薄膜晶体管可以包括栅极; 一个通道层; 源极和漏极，源极和漏极由金属形成; 和金属氧化物层，金属氧化物层形成在沟道层与源极和漏极之间。 金属氧化物层可以在沟道层和源极和漏极之间具有逐渐变化的金属含量。

    Inverter, method of manufacturing the same, and logic circuit including the inverter
    18.
    发明授权
    Inverter, method of manufacturing the same, and logic circuit including the inverter 有权
    逆变器及其制造方法以及包括逆变器的逻辑电路

    公开(公告)号：US07977978B2

    公开(公告)日：2011-07-12

    申请号：US12591654

    申请日：2009-11-25

    申请人： Huaxiang Yin ,  I-hun Song ,  Chang-jung Kim ,  Sang-wook Kim ,  Sun-il Kim

    发明人： Huaxiang Yin ,  I-hun Song ,  Chang-jung Kim ,  Sang-wook Kim ,  Sun-il Kim

    IPC分类号： H03K19/00

    CPC分类号： H01L21/823807 ,  H01L27/0922 ,  H01L27/1225 ,  H01L27/1251

    摘要： Provided are an inverter, a method of manufacturing the inverter, and a logic circuit including the inverter. The inverter may include a first transistor and a second transistor having different channel layer structures. A channel layer of the first transistor may include a lower layer and an upper layer, and a channel layer of the second transistor may be the same as one of the lower layer and the upper layer. At least one of the lower layer and the upper layer may be an oxide layer. The inverter may be an enhancement/depletion (E/D) mode inverter or a complementary inverter.

    摘要翻译： 提供逆变器，逆变器的制造方法以及包括逆变器的逻辑电路。 反相器可以包括具有不同沟道层结构的第一晶体管和第二晶体管。 第一晶体管的沟道层可以包括下层和上层，并且第二晶体管的沟道层可以与下层和上层之一相同。 下层和上层中的至少一层可以是氧化物层。 逆变器可以是增强/耗尽型（E / D）型逆变器或互补型逆变器。

    Ferroelectric capacitor having three-dimensional structure, nonvolatile memory device having the same and method of fabricating the same
    19.
    发明授权
    Ferroelectric capacitor having three-dimensional structure, nonvolatile memory device having the same and method of fabricating the same 失效
    具有三维结构的铁电电容器，具有相同的非易失性存储器件及其制造方法

    公开(公告)号：US07910967B2

    公开(公告)日：2011-03-22

    申请号：US11515024

    申请日：2006-09-05

    申请人： Sang-min Shin ,  Young-soo Park ,  June-mo Koo ,  Byoung-jae Bae ,  I-hun Song ,  Suk-pil Kim

    发明人： Sang-min Shin ,  Young-soo Park ,  June-mo Koo ,  Byoung-jae Bae ,  I-hun Song ,  Suk-pil Kim

    IPC分类号： H01L21/00 ,  H01L31/112 ,  H01L23/48

    CPC分类号： H01L27/11502 ,  H01L27/11507

    摘要： A ferroelectric capacitor having a three-dimensional structure, a nonvolatile memory device having the same, and a method of fabricating the same are provided. The ferroelectric capacitor may include a trench-type lower electrode, at least one layer formed around the lower electrode, a ferroelectric layer (PZT layer) formed on the lower electrode and the at least one layer and an upper electrode formed on the ferroelectric layer. The at least one layer may be at least one insulating interlayer and the at least one layer may also be at least one diffusion barrier layer. The at least one layer may be formed of an insulating material excluding SiO2 or may have a perovskite crystal structure excluding Pb.

    摘要翻译： 提供具有三维结构的铁电电容器，具有其的非易失性存储器件及其制造方法。 铁电电容器可以包括沟槽型下电极，形成在下电极周围的至少一层，形成在下电极和至少一层上的铁电层（PZT层）和形成在铁电层上的上电极。 所述至少一个层可以是至少一个绝缘夹层，并且所述至少一个层也可以是至少一个扩散阻挡层。 所述至少一层可以由除了SiO2之外的绝缘材料形成，或者可以具有不包括Pb的钙钛矿晶体结构。